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Country CodeRENESAS
HITACHI
EPCOS(TDK)
Your search K1317 and relate product result :13 items
Package: TO-3P Manufacturer: HIT Description: K1317 is a high-power transistor manufactured by HIT. It is a NPN silicon transistor with a maximum collector current of 8A and a maximum collector-emitt
Stock:10000
Minimum:2
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Description: K1317 is a NPN silicon epitaxial transistor manufactured by Renesas. Features: Low collector-emitter saturation voltage High current gain High collector current High collector-emitter
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Description: The 2SK1317 is a N-Channel MOS type field effect transistor developed for low frequency and general purpose applications. Features: Low ON-resistance: RDS(ON)=2.2 Ω Low Gate charge:
Stock:10000
Minimum:2
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Stock:18940
Minimum:5
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Stock:22157
Minimum:1
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Description: 2SK1317-E is a N-Channel MOSFET transistor manufactured by Renesas. Features: * Drain-Source Voltage: 500V * Drain Current: 10A * Gate-Source Voltage: ±20V * Power Dissipation: 40W * Ope
Stock:10000
Minimum:2
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Description: 2SK1317-E is a N-channel MOSFET transistor manufactured by Renesas. Features: * Low on-resistance * High speed switching * High input impedance * High voltage breakdown Applications: *
Stock:5000
Minimum:1
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Description: The 2SK1317 is a N-channel MOSFET transistor manufactured by Renesas. It is a high-speed switching device with low on-resistance and low gate-source capacitance. Features: Low on-resist
Stock:10000
Minimum:1
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Stock:827
Minimum:23
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Stock:6
Minimum:1
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2SK1317 is a N-channel MOSFET transistor manufactured by Hitachi. It has a TO3P package and is designed for use in power switching applications. Description: The 2SK1317 is a N-channel MOSFET transis
Stock:312
Minimum:1
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