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Country CodeTOSHIBA
Your search K2313 and relate product result :4 items
Package: TO-3P Description: NPN Silicon Transistor Features: High DC Current Gain High Collector-Emitter Voltage Low Saturation Voltage High Power Dissipation High Reliability Low Noise
Stock:10000
Minimum:2
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TO-3P
Toshiba America Electronic Components
TRANSISTOR 60 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-16C1B, 3 PIN, FET General Purpose Power
Description: The 2SK2313 is a N-channel MOSFET transistor manufactured by Toshiba America Electronic Components. It is a three-terminal device with a TO-3P package. Features: Low on-resistan
Stock:10000
Minimum:2
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Description: 2SK2313 is a N-channel MOSFET transistor manufactured by Toshiba. Features: * Drain-Source Voltage: 200V * Drain Current: 4A * Gate-Source Voltage: ±20V * Power Dissipation: 30W Applica
Stock:22092
Minimum:2
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Stock:156
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company