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Country CodeYour search MG150Q2YS50 and relate product result :2 items
MODULE
Toshiba America Electronic Components
05+
TRANSISTOR 200 A, 1200 V, N-CHANNEL IGBT, 2-95A4A, 7 PIN, Insulated Gate BIP Transistor
Description: The MG150Q2YS50 is a three-phase insulated gate bipolar transistor (IGBT) module with a maximum collector-emitter voltage of 1500V and a maximum collector current of 150A. Features: - Lo
Stock:2000
Minimum:1
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MODULE
Network Hub; Approval Categories:24V Portocol Compatibility; Data Rate Max:100Mbps RoHS Compliant: Yes
Description: MG150Q2YS50 is a three-phase insulated gate bipolar transistor (IGBT) module. Features: Maximum collector-emitter voltage of 1500V Maximum collector current of 150A Maximum colle
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company