≥1:
US $29.33700
Buy(0)
Inquiry(0)
Dear customers, due to the implementation of the GDPR policy in Europe, UTSOURCE has also made adjustment accordingly to meet the policy requirements. Please read the new privacy policy carefully and this window will no longer pop up after you accept it.
Delivery Address
+ Add Address
The new shipping address
* Please fill in the cell phone number correctly to make sure that you can receive the tracking info in time.
Country CodeYour search MG200J2YS1 and relate product result :2 items
DIP
Toshiba America Electronic Components
Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel
Description: The MG200J2YS1 is an IGBT module with a maximum collector current of 200A. It has a collector-emitter voltage of 600V and a gate-emitter voltage of ±20V. Features: - Low on-state voltage
Stock:2000
Minimum:1
Favorite
MODULE
Network Hub; Approval Categories:IEEE 802.3af Compatibility; Data Rate Max:100Mbps RoHS Compliant: Yes
Favorite
Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company