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STMICROELECTRONICS
Your search MJE13009 and relate product result :18 items
Stock:495
Minimum:5
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Description: Bipolar Junction Transistor, PNP, Silicon Features: Collector-Emitter Voltage: -60V Collector Current: -15A Power Dissipation: 150W Package: TO-220 Applications: MJE13009 is design
Stock:10000
Minimum:12
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Description: The MJE13009 is a NPN silicon power transistor designed for high voltage, high speed power switching applications. Features: High voltage: VCEO = 800V High speed switching: tF = 0.3μs
Stock:10000
Minimum:12
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Stock:171
Minimum:4
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Stock:4
Minimum:4
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Stock:6
Minimum:4
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Description: NPN Transistor Features: Collector-Emitter Voltage: VCEO = 800V Collector-Base Voltage: VCBO = 800V Emitter-Base Voltage: VEBO = 5V Collector Current: IC = 15A Power Dissipation: PC
Stock:10000
Minimum:4
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Stock:10000
Minimum:1
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Description: NPN Power Transistor Features: High DC Current Gain High Voltage Low Saturation Voltage High Reliability High Power Dissipation High Operating Temperature Low Collector-Emitter Sat
Stock:10000
Minimum:3
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Description: NPN Power Transistor Features: - High DC Current Gain - High Voltage - High Reliability - Low Saturation Voltage Applications: - Audio Amplifiers - Switching Regulators - Motor Control -
Stock:10000
Minimum:2
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Description: The MJE13009G is a NPN silicon power transistor designed for use in general purpose amplifier and switching applications. Features: High current (max. IC = 15A) Low saturation voltage
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Stock:94
Minimum:4
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