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Country CodeFREESCALE SEMICONDUCTOR
Your search MRFE6S9160HS and relate product result :5 items
RF TRANSISTOR
Fresscal
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRFE6S9160HS is a high power GaN on SiC transistor from Freescale. It delivers peak output power of 400W at 800MHz with a supply voltage of 46V. The transistor has a high gain of 11 dB and a high effi
Stock:2000
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NI-780S
Freescale
08+
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Stock:2000
Minimum:1
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RF TRANSISTOR
Freescal
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Description: The MRFE6S9160HSR3 is a GaN integrated power transistor from Freescale which operates from 700MHz to 6GHz. Features: 400W average power at 3.3V supply 20 dB gain 50% efficiency Integ
Stock:5000
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Stock:496
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Stock:5000
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company