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Country CodeRENESAS
Your search RJP63K2 and relate product result :15 items
The RJP63K2 is a N-channel MOSFET manufactured by Renesas Electronics. It is a TO-220 package and is designed for use in power switching applications. Description: The RJP63K2 is a N-channel MOSFET w
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RJP63K2 is a power field-effect transistor (FET) made by Renesas. It is a N-channel enhancement-mode FET with a low on-resistance and a low voltage drop. It comes in a TO-263 package and has a drain-s
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Description: RJP63K2DPP is a power MOSFET manufactured by Renesas. It is a N-channel enhancement mode MOSFET with a maximum drain-source voltage of 600V and a maximum drain current of 3A. Features: -
Stock:10000
Minimum:2
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Description: The RJP63K2 IGBT is a high-speed, low-loss, low-noise, and low-saturation voltage power transistor from Renesas. It is designed for use in high-frequency switching applications such as m
Stock:10000
Minimum:2
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Description: The RGP63K2 RJP63K2 is a three-phase bridge rectifier with a maximum current rating of 63A and a peak reverse voltage of 600V. Features: Low forward voltage drop High surge current ca
Stock:10000
Minimum:3
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Description: RJP63K2DPP is a N-channel MOSFET manufactured by Renesas. Features: - Low on-resistance - High-speed switching - High-temperature operation - Low gate charge - Avalanche-rated Applicati
Stock:10000
Minimum:2
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Description: The RJP63K2 is a 600V/20A N-channel Power MOSFET from Renesas. It is a MOSFET transistor in a TO-263 package with a gate-source voltage (VGS) of +-20V. Features: High cell density with
Stock:10000
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Description: RJP63K2DPK-M2-T0 is a three-pin, TO-3P package, Renesas power MOSFET. Features: Low on-resistance High-speed switching Low gate charge Low input capacitance High-temperatur
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