SKW30N60
TO-247
Infineon Technologies AG
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Your search SKW30N60 and relate product result :11 items
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TO-247
Infineon Technologies AG
07+
IGBT with Anti-Parallel Diode; Package: PG-TO247-3; Switching Frequency: Fast IGBT 10-40 kHz; Package: TO-247; VCE max: 600.0 V; ICmax @ 25°: 41.0 A; ICmax @ 100°: 30.0 A
Stock:10000
Minimum:2
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TO-247
Infineon Technologies AG
15+
IGBT with Anti-Parallel Diode; Package: PG-TO247-3; Switching Frequency: Fast IGBT 10-40 kHz; Package: TO-247; VCE max: 600.0 V; ICmax @ 25°: 41.0 A; ICmax @ 100°: 30.0 A
Description: The SKW30N60 is an N-channel MOSFET designed for high-speed switching applications. Features: Low on-resistance High-speed switching Low gate charge Low input capacitance
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Stock:40
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Stock:13
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TO-247
Infinion
IGBT with Anti-Parallel Diode; Package: PG-TO247-3; Switching Frequency: HighSpeed 30-100 kHz; Package: TO-247; VCE max: 600.0 V; ICmax @ 25°: 41.0 A; ICmax @ 100°: 30.0 A
Description: SKW30N60HS is a N-channel MOSFET produced by Infineon Technologies. It is a high-speed MOSFET with a maximum drain-source voltage of 600V and a maximum drain current of 30A. Features: L
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Description: The SKW30N60/K30N60 is a 600V, 30A, N-channel MOSFET from Infineon. Features: Low gate charge Low on-resistance High current capability Avalanche rated RoHS compliant Halogen-free
Stock:10000
Minimum:2
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TO-247
Infineon Technologies AG
0204+
IGBT with Anti-Parallel Diode; Package: PG-TO247-3; Switching Frequency: Fast IGBT 10-40 kHz; Package: TO-247; VCE max: 600.0 V; ICmax @ 25°: 41.0 A; ICmax @ 100°: 30.0 A
Description: N-Channel MOSFET, 600V, 30A, TO-247 Features: Low gate charge Low on-state resistance Avalanche rated High temperature operation RoHS compliant Halogen free Applications
Stock:5000
Minimum:1
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