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Your search RJP30E4 and relate product result :3 items
Description: The RJP30E4 is a silicon N-Channel MOSFET device with superior switching performance. Features: - Low On-Resistance: RDS(on) = 6.5mΩ max @ VGS = 10V - Low Gate Charge: Qg(typ) = 16nC - L
Stock:10000
Minimum:2
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Description: The RJP30E4DPE is a N-channel MOSFET transistor manufactured by Renesas. It is a low-on resistance device with a breakdown voltage of 30V. Features: - Low on-resistance - High-speed swit
Stock:10000
Minimum:2
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company