IRF1407STRLPBF
Product category: Elec-component
Description
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET? power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Product Description
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Channel Type:
N
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Maximum Continuous Drain Current:
100 A
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Maximum Drain Source Voltage:
75 V
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Maximum Drain Source Resistance:
7 mΩ
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Maximum Gate Source Voltage:
-20 V, +20 V
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Package Type:
D2PAK (TO-263)
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Mounting Type:
Surface Mount
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Transistor Configuration:
Single
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Pin Count:
3
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Channel Mode:
Enhancement
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Category:
Power MOSFET
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Maximum Power Dissipation:
200 W
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Typical Input Capacitance @ Vds:
5600 pF @ 25 V
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Typical Gate Charge @ Vgs:
160 nC @ 10 V
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Minimum Operating Temperature:
-55 °C
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Typical Turn-On Delay Time:
11 ns
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Transistor Material:
Si
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Dimensions:
10.67 x 4.83 x 9.65mm
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Length:
10.67mm
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Number of Elements per Chip:
1
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Width:
4.83mm
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Typical Turn-Off Delay Time:
150 ns
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Forward Transconductance:
74S
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Forward Diode Voltage:
1.3V
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Series:
HEXFET
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Height:
9.65mm
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Maximum Operating Temperature:
+175 °C
Description
Trans MOSFET N-CH Si 75V 100A 3-Pin(2+Tab) D2PAK T/R
Product Description
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Drain Current (Max):
100 A
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Frequency (Max):
Not Required MHz
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Gate-Source Voltage (Max):
±20(V)
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Output Power (Max):
Not Required W
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Power Dissipation:
3.8(W)
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Mounting:
Surface Mount
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Noise Figure:
Not Required dB
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Drain-Source On-Res:
0.0078(ohm)
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Operating Temp Range:
-55C to 175C
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Package Type:
D2PAK
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Packaging:
Tape and Reel
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Pin Count:
2 +Tab
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Polarity:
N
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Type:
Power MOSFET
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Number of Elements:
1
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Operating Temperature Classification:
Military
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Channel Mode:
Enhancement
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Drain Efficiency:
Not Required %
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Drain-Source On-Volt:
75(V)
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Power Gain :
Not Required dB
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Rad Hardened:
No
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Continuous Drain Current:
100(A)
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DELETED:
Compliant