IRF7341TRPBF
Product category: Elec-component
Description
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET? power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Product Description
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Channel Type:
N
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Maximum Continuous Drain Current:
4.7 A
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Maximum Drain Source Voltage:
55 V
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Maximum Drain Source Resistance:
65 mΩ
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Maximum Gate Threshold Voltage:
1V
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Minimum Gate Threshold Voltage:
1V
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Maximum Gate Source Voltage:
-20 V, +20 V
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Package Type:
SOIC
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Mounting Type:
Surface Mount
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Transistor Configuration:
Isolated
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Pin Count:
8
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Channel Mode:
Enhancement
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Category:
Power MOSFET
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Maximum Power Dissipation:
2 W
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Minimum Operating Temperature:
-55 °C
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Typical Gate Charge @ Vgs:
24 nC @ 10 V
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Typical Input Capacitance @ Vds:
740 pF @ 25 V
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Typical Turn-Off Delay Time:
32 ns
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Width:
4mm
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Number of Elements per Chip:
2
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Height:
1.5mm
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Series:
HEXFET
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Maximum Operating Temperature:
+150 °C
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Length:
5mm
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Dimensions:
5 x 4 x 1.5mm
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Transistor Material:
Si
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Typical Turn-On Delay Time:
8.3 ns
Description
Trans MOSFET N-CH Si 55V 4.7A 8-Pin SOIC T/R
Product Description
-
Drain Current (Max):
4.7 A
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Frequency (Max):
Not Required MHz
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Gate-Source Voltage (Max):
±20(V)
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Output Power (Max):
Not Required W
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Power Dissipation:
2(W)
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Mounting:
Surface Mount
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Noise Figure:
Not Required dB
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Drain-Source On-Res:
0.05(ohm)
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Operating Temp Range:
-55C to 150C
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Package Type:
SOIC
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Packaging:
Tape and Reel
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Pin Count:
8
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Polarity:
N
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Type:
Power MOSFET
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Number of Elements:
2
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Operating Temperature Classification:
Military
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Channel Mode:
Enhancement
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Drain Efficiency:
Not Required %
-
Drain-Source On-Volt:
55(V)
-
Power Gain :
Not Required dB
-
Rad Hardened:
No
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Continuous Drain Current:
4.7(A)
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DELETED:
Compliant
PDF
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IRF7341TRPBF
International Rectifier
IRF7341TRPBF International Rectifier