MMBTA42,215
Product category: Elec-component
Description
High Voltage Transistors, Nexperia
Product Description
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Transistor Type:
NPN
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Maximum DC Collector Current:
100 mA
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Maximum Collector Emitter Voltage:
300 V
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Package Type:
SOT-23 (TO-236AB)
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Mounting Type:
Surface Mount
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Maximum Power Dissipation:
250 mW
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Minimum DC Current Gain:
25
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Transistor Configuration:
Single
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Maximum Collector Base Voltage:
300 V
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Maximum Emitter Base Voltage:
6 V
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Pin Count:
3
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Number of Elements per Chip:
1
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Width:
1.4mm
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Maximum Base Emitter Saturation Voltage:
0.9 V
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Dimensions:
1 x 3 x 1.4mm
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Length:
3mm
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Minimum Operating Temperature:
-65 °C
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Maximum Collector Emitter Saturation Voltage:
0.5 V
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Maximum Operating Temperature:
+150 °C
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Height:
1mm
Description
Trans GP BJT NPN 300V 0.1A Automotive 3-Pin TO-236AB T/R
Product Description
-
Emitter-Base Voltage:
6(V)
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Frequency:
50(MHz)
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Power Dissipation:
0.25(W)
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Mounting:
Surface Mount
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Collector Current (DC) :
0.1(A)
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Collector-Base Voltage:
300(V)
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Collector-Emitter Voltage:
300(V)
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DC Current Gain:
25
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Operating Temp Range:
-65C to 150C
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Packaging:
Tape and Reel
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Pin Count:
3
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Operating Temperature Classification:
Military
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Category :
Bipolar Small Signal
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Package Type:
TO-236AB
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Number of Elements:
1
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Rad Hardened:
No
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Transistor Polarity:
NPN