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Home > Elec-component > Modules > IGBT
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MODULE
Powerex Power Semiconductors
Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, MODULE-21
The Powerex CM10LD-12H is a high-performance, high-efficiency, and low-cost power module. It is designed for use in a variety of applications, including motor drives, power supplies, and power convers
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MG100J1BS11 is a power module manufactured by Toshiba. It is a three-phase bridge rectifier module with a voltage rating of 100V and a current rating of 1A. The module is designed for use in motor con
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Description: The CM300HA-12H is a 1200V, 300A IGBT Module from Mitsubishi. Features: - High speed switching - Low power loss - Low noise - High reliability - High surge capability Applications: The
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Description: This is a three-phase bridge rectifier module manufactured by Toshiba. Features: Rated current: 50A Rated voltage: 600V Low forward voltage drop High surge current capability High re
Stock:2000
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BSM25GD100D is a module manufactured by EUPEC/SIEMENS. It is a 1200V/100A IGBT module with a built-in fast diode. The module is designed for use in motor drives, UPS, welding machines, and other indus
Stock:2000
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Description: This is a SEMIKRON/EUPEC IGBT module with a voltage rating of 1200V and a current rating of 100A. Features: Low inductance Low switching losses High current capability High voltage ca
Stock:2000
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Stock:2000
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Description: EUPEC IGBT Module Feature: - Voltage rating of 1200V - Current rating of 75A - Low switching losses - Low noise - High frequency operation - High power density - High reliability Applica
Stock:2000
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Mitsubishi CM20LD-12H is a power module that is designed for use in motor control applications. It is a three-phase bridge rectifier module that is capable of handling up to 20A of current. The module
Stock:2000
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MODULE
Toshiba America Electronic Components
Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel
Description: The MG25Q6ES50A is a 6-bit MOSFET module from Toshiba America Electronic Components. It is a high-speed, low-power, low-voltage MOSFET module designed for use in power management applica
Stock:2000
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Stock:2000
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MODULE
Network Hub; Approval Categories:IEEE 802.3af Compatibility; Data Rate Max:100Mbps RoHS Compliant: Yes
MG200J1ZS50 is an IGBT module manufactured by Mitsubishi Electric. It is a high-power, high-speed switching device designed for use in motor control, inverter, and other power conversion applications.
Stock:2000
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Stock:2000
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MODULE
Triac; Thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, ITrms:12A; Gate Trigger Current QI, Igt:10mA; Current, It av:12A; Gate Trigger Current Max, Igt:10mA RoHS Compliant: Yes
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MODULE
Toshiba
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
Description: The MG15Q6ES50A is a three-phase brushless motor driver module from Toshiba. It is designed to drive brushless motors with a maximum current of 15A. Features: Maximum output current of
Stock:2000
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Stock:2000
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CM50TF-24H is a module manufactured by Mitsubishi. It is a 50A IGBT module with a collector-emitter voltage of 1200V. It is designed for use in motor control, welding, and power supply applications. I
Stock:2000
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The BSM25GD120D is a 1200V, 25A IGBT module manufactured by EUPEC/Siemens. It is a three-phase inverter module with a maximum junction temperature of 150°C. The module features a low conduction loss,
Stock:2000
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Stock:2000
Minimum:1
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company