MRF9030L MRF9030
TO-272
Freescale
06+
RF Power Field Effect TransistorN - Channel Enhancement - Mode Lateral MOSFET 945 MHz, 30 W, 26 V ni-360
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Home > Elec-component > Modules > RF Modules
TO-272
Freescale
06+
RF Power Field Effect TransistorN - Channel Enhancement - Mode Lateral MOSFET 945 MHz, 30 W, 26 V ni-360
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H2S
Mitsubishi
2017+
Silicon RF Devices RF High Power MOS FET Modules RA55H3340M Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
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ni-780s
Freescale
09+
MRF7S21210HS 2110 - 2170 MHz, 63 W AVG., 28 V [RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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H2S
Mitsubishi
2017+
Silicon RF Devices RF High Power MOS FET Modules RA30H4452M Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
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