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Utsource
TO-252
On Semiconductor
16+
Description: NPN Bipolar Transistor Features: - Low collector-emitter saturation voltage - High current gain - Low noise - High voltage Applications: - Audio amplifiers - Switching applications - M
Stock:10000
Minimum:5
Standard delivery
Express: Estimated arrival {0}
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TO-92
Fairchild
16+
Parameter Symbol Min Typical Max Unit Conditions Collector-Emitter Voltage VCEO - - 50 V Collector-Base Voltage VCBO - - 60 V Emitter-Base Voltage VEBO - - 5 V Collector Current IC - -
Stock:30000
Minimum:223
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
TO-3P
Infineon Technologies AG
19+
Description: Infineon IKW40N120H3 is a N-channel 1200V CoolMOS C3 Power Transistor with TO-3P package. Features: Low gate charge Low on-state resistance High avalanche ruggedness High peak current
Stock:5000
Minimum:1
Standard delivery
Express: Estimated arrival {0}
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TO-252
On Semiconductor
16+
Parameter Symbol Min Typical Max Unit Collector-Emitter Voltage VCE - - 80 V Collector-Base Voltage VCB - - 80 V Emitter-Base Voltage VEB - - 5 V Continuous Collector Current IC - - 3 A
Stock:10000
Minimum:16
Standard delivery
Express: Estimated arrival {0}
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TO-3P
Fairchild/on
17+
Parameter Value Unit Device Type MOSFET - Package DPAK (TO-252) - Maximum Drain Voltage 600 V Continuous Drain Current 18.5 A Peak Pulse Drain Current 94 A RDS(on) at 10V 0.18 Ω Gat
Stock:10000
Minimum:2
Standard delivery
Express: Estimated arrival {0}
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TO-264
Fairchild
17+
Parameter Symbol Min Typ Max Unit Collector-Emitter Voltage VCE - 1200 - V Gate-Source Voltage VGS -20 - 20 V Continuous Collector Current IC - 35 - A Pulse Collector Current IC(rms) - 70
Stock:5000
Minimum:5
Standard delivery
Express: Estimated arrival {0}
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TO-264
Fairchild/on
19+
Parameter Symbol Min Typ Max Unit Collector-Emitter Voltage V CES - - 1000 V Gate-Emitter Voltage V GES -20 - 20 V Continuous Collector Current I C - 60 - A Pulse Collector Current I CM -
Stock:10000
Minimum:2
Standard delivery
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MODULE
LS
13+
Description: The IKCM30F60GA is a 600V, 30A, 3-phase IGBT module from Infineon Technologies. Features: Low switching losses Low EMI High short circuit capability Low gate charge High current cap
Stock:5000
Minimum:5
Standard delivery
Express: Estimated arrival {0}
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TO-247
IXYS
11+
Parameter Symbol Min Typ Max Unit Notes Drain-Source Voltage VDS - 600 - V Gate-Source Voltage VGS -20 - 20 V Continuous Drain Current ID - 48 - A @ TC = 25°C Pulse Drain Current ID(p)
Stock:10000
Minimum:1
Standard delivery
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TO-247
Infineon Technologies AG
Parameter Symbol Min Typ Max Unit Notes Drain-Source Voltage VDS - 1200 - V Gate-Source Voltage VGS -20 0 20 V Continuous Drain Current ID - 20 - A @ TC = 25°C Power Dissipation PTOT -
Stock:10000
Minimum:2
Standard delivery
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TO-220
Fairchild
2017
Description: N-Channel MOSFET Feature: - Low Gate Charge - Low On-Resistance - Fast Switching - Ease of Paralleling - Simple Drive Requirements Application: - Switch Mode Power Supplies - DC-DC Conver
Stock:10000
Minimum:5
Standard delivery
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TO-3P
Fairchild/0n
17+
Parameter Symbol Min Typ Max Unit Description Drain-Source Voltage VDS -30 - 30 V Maximum continuous drain-source voltage Gate-Source Voltage VGS -12 - 12 V Maximum gate-source voltage Cont
Stock:5000
Minimum:1
Standard delivery
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SOT23-6
Fairchild
14+
Parameter Symbol Min Typ Max Unit Description Supply Voltage VDD 2.0 - 5.5 V Operating supply voltage range Gate-Source Voltage VGS -18 - 18 V Maximum gate-source voltage Drain-Source Volta
Stock:10000
Minimum:10
Standard delivery
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TO-247
International Rectifier
Description: This is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by International Rectifier (IR). It is a TO-247 packaged device. Features: Low VCE(sat) High speed switching Lo
Stock:5000
Minimum:5
Standard delivery
Express: Estimated arrival {0}
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TO-246
Fairchild
2016+
Manufacturer: Fairchild Description: This is a N-Channel MOSFET with a maximum drain source voltage of 600V, a drain current of 50A, and a maximum power dissipation of 590W. Features: Low Gate Cha
Stock:10000
Minimum:5
Standard delivery
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TO-247
Fairchild/on
2017+
Parameter Symbol Value Unit Description Maximum Drain-Source Voltage VDS(max) 600 V Maximum voltage that can be applied between drain and source. Maximum Gate-Source Voltage VGS(max) ±20 V Ma
Stock:2000
Minimum:1
Standard delivery
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QFP48
E-Coms
15+
Parameter Description Value Part Number Full Part Number AS19-F Type Component Type Switch - Tactile Actuator Actuator Style Dome Contact Form Contact Configuration SPST-NO (Single Pole,
Stock:10000
Minimum:5
Standard delivery
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TO-247
Infineon Technologies AG
2019+
Description: IKW50N60T is a 600V N-channel MOSFET manufactured by Infineon Technologies. Features: Low on-state resistance Fast switching Low gate charge Avalanche energy rated High current capab
Stock:10000
Minimum:1
Standard delivery
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TO-220
Fairchild
2003+
Parameter Symbol Conditions Min Typical Max Unit Input Voltage VI Continuous 14 - 30 V Output Voltage VO 12 12 12 V Output Current IO Continuous - 1.5 1.5 A Line Regulation ΔVO/ΔVI 14V t
Stock:10000
Minimum:8
Standard delivery
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SOP8
Fairchild
14+
Description: N-Channel PowerTrench MOSFET Features: Low On-Resistance Low Gate Charge Fast Switching 100% UIL Tested RoHS Compliant Halogen Free Applications: Load Switch Battery Management D
Stock:10000
Minimum:10
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company
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