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Description
Transistor Module Medium Power Switching Use Insulated Type
Title
Modules
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Introduction:
Transistors are, for the most part, simple types of active circuitry that can increase, or increase, the strength of electrical signals. They do this by transferring power, usually from a DC power source, to a signal. The operation of many transistor amplifier circuits can be accurately described as changing the power output of a power input signal in such a way that the output signal is a high-power replica of the input signal.
Core Parameters:
● UL recognized
● Insulated type
● Current of collector 50A
● Current gain DC 75
Circuit Diagram:
Working:
Transistor performance depends on the pn junctions, produced by doping silicon with dirty atoms that provide either excess or lack of electrons in the interacting atoms of the atoms in the semiconductor crystal structure. Silicon forms a crystal structure in which each atom shares four electrons with its neighbor to form covalent bonds. These four electrons are in the outermost layer of each atom, and they are called valence electrons, and they form bonds. Doping imports atoms with three or five valence electrons in a crystal structure, and these atoms form bonds with silicon atoms either with or without a single electron or with one additional electron.
Applications:
● Welders
● Switch mode power supplies
● Uninterruptable power supply
● Motor controls AC & DC
Preview of the first 3 pages of the data sheet
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BFP640F : NPN Silicon Germanium RF Transistor. NPN Silicon Germanium RF Transistor* High gain low noise RF transistor Provides outstanding performance for a wide range of wireless applications Ideal for CDMA and WLAN applications Outstanding noise figure at 1.8 GHz Outstanding noise figure at 6 GHz High maximum stable gain Gms at 1.8 GHz Gold metallization for extra high reliability ESD: Electrostatic. EFC240D : GaAs. Low Distortion GAAS Power Fets. +31.0dBm TYPICAL OUTPUT POWER 18.5dB TYPICAL POWER GAIN AT 2GHz HIGH BVgd FOR 10V BIAS X 2400 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 40mA PER BIN RANGE SYMBOLS P1dB G1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output. FTS1018 : . s Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10µs, duty cycle1% Conditions Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage. IRF9240 : P-channel Power MOSFET. PCHANNEL POWER MOSFET HIGH VOLTAGE INTEGRAL PROTECTION DIODE AVAILABLE TO-3 (TO-204AA) AND CERAMIC SURFACE MOUNT PACKAGES Note: IRFNxxxx also available with pins 1 and 3 reversed. TO3 (TO204AA) Metal Package SM TO220 Ceramic Surface Mount Package ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS VDGR VGS ID IDM PD ILM Tj Tstg. PMWD19UN : PMWD19UN; Dual Utrenchmos (tm) Ultra Low Level FET;; Package: SOT530-1 (TSSOP8). SMCJ7V5A : 1500 Watt Transient Voltage Suppressors. Glass passivated junction. 1500 W Peak Pulse Power capability Excellent clamping capability. Low incremental surge resistance. Fast response time; typically less than 1.0 ps from 0 volts to BV for unidirectional and 5.0 ns for bidirectional. Typical IR less than 1.0 µA above 10V. UL certified, UL #E210467. COLOR BAND DENOTES CATHODE ON UNIDIRECTIONAL. UPA1764 : Switching Dual N-channel Power MOSFET Industrial Use. The µPA1764 is N-channel MOS Field Effect Transistor designed for high current switching applications. Dual chip type Low On-state Resistance 27 m (TYP.) (VGS 32 m (TYP.) (VGS 34 m (TYP.) (VGS = 3.5 A) Low input capacitance Ciss 1300 pF (TYP.) Built-in G-S protection diode Small and surface mount package (Power SOP8) Drain to Source Voltage Gate to Source. 05002270CMZC : CAPACITOR, CERAMIC, MULTILAYER, 200 V, BP, 0.000027 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 2.70E-5 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 200 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface Mount Technology. 05369-T099 : 8 W, SMPS TRANSFORMER. s: Category: Power, Signal ; Other Transformer Types / Applications: SMPS TRANSFORMER ; Mounting: Chip Transformer ; Operating Frequency: 500000 Hz ; Standards: RoHS. CXTA42LEADFREE : 0.5 A, 300 V, NPN, Si, POWER TRANSISTOR. s: Polarity: NPN ; Package Type: PLASTIC PACKAGE-3. EPB5035G-RC : DATACOM TRANSFORMER FOR GENERAL PURPOSE APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer ; Operating Temperature: -40 to 85 C (-40 to 185 F) ; Standards: RoHS. IRGC50B60KB : 600 V, N-CHANNEL IGBT. s: Polarity: N-Channel ; Package Type: 150 MM, WAFER ; Number of units in IC: 1. RW1500KE : RESISTOR, POTENTIOMETER, WIRE WOUND, 1 TURN(S), 1 W, 50 ohm. s: Category / Application: General Use ; Mounting / Packaging: Bolt-on Chassis, ROHS COMPLIANT ; Standards and Certifications: RoHS ; Resistance Range: 50 ohms ; Tolerance: 10 +/- % ; Power Rating: 1 watts (0.0013 HP). SNR4030-100M : 1 ELEMENT, 10 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Lead Style: ONE SURFACE ; Molded / Shielded: Shielded ; Application: General Purpose, Power Choke ; Inductance Range: 10 microH ; Rated DC Current: 1500 milliamps ; Operating Temperature: -25 to 120 C (-13 to 248 F). SPD10192 : 35 A, 800 V, SILICON, RECTIFIER DIODE, DO-5. s: Package: HERMETIC SEALED PACKAGE-1 ; Number of Diodes: 1 ; VRRM: 800 volts ; IF: 35000 mA ; trr: 0.2500 ns. TNR32HP102K310 : RESISTOR, VOLTAGE DEPENDENT, 825 V, 620 J, CHASSIS MOUNT. s: Category / Application: General Use ; Mounting / Packaging: Bolt-on Chassis, Radial Leads, RADIAL LEADED ; Power Rating: 1.2 watts (0.0016 HP) ; Operating DC Voltage: 825 volts ; Operating Temperature: -40 to 85 C (-40 to 185 F). V141HF34 : RESISTOR, VOLTAGE DEPENDENT, 188 V, 291 J, CHASSIS MOUNT. s: Category / Application: General Use ; Mounting / Packaging: Bolt-on Chassis, HALOGEN FREE AND ROHS COMPLIANT ; Power Rating: 2 watts (0.0027 HP) ; Operating DC Voltage: 188 volts ; Operating Temperature: -55 to 85 C (-67 to 185 F) ; Standards and Certifications: RoHS. YA862C15R : 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB. s: Arrangement: Common Catode ; Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, High Voltage ; IF: 10000 mA ; Package: TO-220, PLASTIC, TO-220, 3 PIN ; Pin Count: 3 ; Number of Diodes: 2. 36D103G075CC2A : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 75 V, 10000 uF, CHASSIS MOUNT. s: Applications: General Purpose ; Electrolytic Capacitors: Aluminum Electrolytic ; RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 10000 microF ; Capacitance Tolerance: 75 (+/- %) ; WVDC: 75 volts ; Mounting Style: CHASSIS MOUNT ; Operating Temperature: 85 C (185. |
204 buyer reviews from Australia
Sarah Jackson
Length of registration:7 years
This integrated circuit is great! It was easy to install and I haven't had any issues with it. The performance is excellent and it's been a great addition to my system. Highly recommended!
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03/17/2023
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QM50TX-H
QM50TX-H has several brands around the world that may have alternate names for QM50TX-H due to regional differences or acquisition. QM50TX-H may also be known as the following names:
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Stock Status: 5000
Minimum: 1
Total Price:
Unit Price:34.07166
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