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SKM145GB066D is a module manufactured by Semikon. It is a three-phase bridge rectifier module with a rated current of 145A and a maximum reverse voltage of 600V. It is designed for use in motor drives
Estoque:2000
Mínimo:1
Favorito
MODULE
Eupec
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
Description: BSM50GB170DN2 is an insulated-gate bipolar transistor (IGBT) module manufactured by EUPEC. Features: Maximum collector-emitter voltage of 1700V Maximum collector current of 50A Maximu
Estoque:2000
Mínimo:1
Favorito
The FPDB50PH60 is a module manufactured by Fairchild. It is a 600V, 50A, dual N-channel MOSFET. It is designed for use in synchronous rectification applications and high current switching applications
Estoque:5000
Mínimo:1
Favorito
2MBI200U2A-060-50 is a 200A/600V IGBT module manufactured by Fuji Electric. It features a low saturation voltage, high speed switching, and high reliability. This module is suitable for use in motor c
Estoque:2000
Mínimo:1
Favorito
MODULE
Infineon Technologies AG
04+
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
The Infineon BSM100GB120DN2E3256 is a 1200V/100A IGBT module designed for high power switching applications. It features a high power density, low switching losses, and a high current carrying capacit
Estoque:2000
Mínimo:1
Favorito
Estoque:2000
Mínimo:1
Favorito
BSM20GP-60 is a module manufactured by EUPEC. It is an insulated-gate bipolar transistor (IGBT) module with an integrated diode. It has a voltage rating of 600V and a current rating of 20A. The BSM20
Estoque:2000
Mínimo:1
Favorito
Estoque:2000
Mínimo:1
Favorito
SKM50GB123D is a three-phase bridge rectifier module manufactured by Semikron. It is a 1200V, 50A module with a forward current of 50A and a reverse voltage of 1200V. It is designed for use in motor d
Estoque:2000
Mínimo:1
Favorito
MODULE
Toshiba America Electronic Components
Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel
Description: The MG15J6ES40 is a 15A, 600V IGBT module from Toshiba America Electronic Components. Features: High speed switching Low saturation voltage Low power loss High reliability Lo
Estoque:2000
Mínimo:1
Favorito
MODULE
Toshiba America Electronic Components
TRANSISTOR 75 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
Estoque:2000
Mínimo:1
Favorito
Description: CM30TF-12H is a Mitsubishi inverter module produced by Mitsubishi Electric. Features: The CM30TF-12H is a single-phase, 200V-class three-level inverter module that can handle up to 12kW
Estoque:2000
Mínimo:1
Favorito
Estoque:10000
Mínimo:10
Favorito
SKM150GB12V is a module manufactured by Semikron. It is a thyristor/diode module with a blocking voltage of 1200V and a current rating of 150A. It is designed for use in high-power switching applicati
Estoque:2000
Mínimo:1
Favorito
Description: SKM150GB123D is a three-phase bridge rectifier module manufactured by Semikron. It is designed to be used in applications such as AC/DC power supplies, DC/DC converters, and motor drives.
Estoque:2000
Mínimo:1
Favorito
MODULE
Eupec
04+
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
Description: BSM50GD120DN2_B10 is an insulated gate bipolar transistor (IGBT) module manufactured by EUPEC. Features: - 1200 Volts - 50 Amps - 4.1 mOhms - Low Vce(sat) - Improved EMI performance
Estoque:2000
Mínimo:1
Favorito
MODULE
Toshiba America Electronic Components
TRANSISTOR 50 A, 450 V, NPN, Si, POWER TRANSISTOR, 2-33C1A, 3 PIN, BIP General Purpose Power
Description: The MG50G1BL3 is a 50A IGBT module from Toshiba America Electronic Components. It is designed to provide high power switching and control in a wide range of applications. Features: Low
Estoque:5000
Mínimo:1
Favorito
Description: This is a SEMIKRON module. It is a three-phase, insulated-gate bipolar transistor (IGBT) module with a maximum collector-emitter voltage of 1200V and a maximum collector current of 40
Estoque:2000
Mínimo:1
Favorito
MODULE
Toshiba
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS)
Description: This is a module manufactured by Toshiba. It is a power module with a voltage rating of 600V and a current rating of 10A. Features: High-speed switching Low loss Low EMI noise Hi
Estoque:2000
Mínimo:1
Favorito
Especialistas em produção interrompida, podemos fornecer um grande número de componentes eletrônicos que foram interrompidos e são difíceis de encontrar, para facilitar a empresa de manutenção