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Description: BTS462T is a N-channel MOSFET produced by Infineon Technologies. Features: - Low on-resistance - Low gate charge - Low input capacitance - Low threshold voltage - High avalanche energy
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Description: The MMBT2222A is a PNP Bipolar Transistor designed for general purpose switching and amplifier applications. Features: Low Collector-Emitter Saturation Voltage High DC Current Gain Low
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Description: The P6KE24CA is a unidirectional Transient Voltage Suppressor (TVS) diode designed to protect voltage sensitive components from high voltage, high energy transients. Features: * Peak Pul
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Manufacturer: NEC Description: Optoisolator Transistor Output Features: Isolation Voltage: 5000 Vrms High Collector-Emitter Voltage: 80V Low Saturation Voltage High Speed Response Low I
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Description: 2SK1507 is a N-channel MOSFET manufactured by Fuji Electric. Features: - Low on-resistance - High speed switching - Low gate charge - Low input capacitance - High voltage Applications:
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Description: The 74HC138D is a high speed CMOS 3-to-8 line decoder/demultiplexer fabricated with silicon gate C2MOS technology. Features: - High speed: tpd = 8.5ns (typ.) at VCC = 5V - Low power diss
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Description: The IR2136J is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Features: High voltage capability up to 600V H
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company