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The NEO-5Q-0-002 is a GPS module manufactured by Ublox. It is a high-performance GPS receiver module with an integrated antenna. It is designed for applications that require high accuracy and low powe
Stock:5000
Minimum:1
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Description: APT2X61D60J is an IGBT module manufactured by Advanced Power Technology (APT). It is a 600V, 2x61A, dual IGBT module. Features: 600Voltage rating 2x61A current rating Low switching lo
Stock:2000
Minimum:1
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2SA1302 and 2SC3281 are PNP and NPN silicon epitaxial transistors, respectively, in a TO-3PL package. Description: 2SA1302: This is a PNP silicon epitaxial transistor designed for use in power ampli
Stock:10000
Minimum:10
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SOT-89
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FETs (Discrete) RD01MUS2 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Stock:10000
Minimum:4
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Description: Infineon IGBT Module Features: - High power density - Low switching losses - Low noise operation - High reliability - High temperature operation - Easy to use Applications: - Automotive -
Stock:2000
Minimum:1
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Stock:10000
Minimum:1
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Description: Infineon IGBT Module Features: Low switching losses Low conduction losses High short-circuit capability High frequency operation Low inductance Low stray inductance Low EMI High s
Stock:2000
Minimum:1
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Stock:30000
Minimum:30
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Stock:5000
Minimum:1
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Stock:2000
Minimum:1
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Stock:5000
Minimum:1
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The GIPN3H60 is a three-phase IGBT module manufactured by Infineon. It is designed for use in high power switching applications such as motor drives, UPS systems, and solar inverters. The module feat
Stock:5000
Minimum:1
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Stock:10000
Minimum:10
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Stock:10000
Minimum:10
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Description: The PS21353-NP is a high-speed, low-power, low-voltage, low-saturation, N-channel MOSFET module from Mitsubishi. Features: Low on-resistance Low input capacitance Low input/out
Stock:2000
Minimum:1
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Stock:10000
Minimum:10
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Description: KBPC1510 is a 15A 1000V bridge rectifier. It is a four-pin device with a single-phase full-wave rectification. Features: High surge current capability Low forward voltage drop Low rev
Stock:10000
Minimum:10
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Stock:2000
Minimum:1
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TO-220
Mitsubishi
2018
Silicon RF Devices RF High Power MOS FETs (Discrete) RD06HVF1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Description: RD06HVF1-501 is a N-channel power MOSFET manufactured by Mitsubishi. Features: Drain-Source Voltage: 60V Drain Current: 6A RDS(on): 0.065Ω Gate-Source Voltage: ±20V Operating Temper
Stock:10000
Minimum:1
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Description: This is a 600V, 20A, N-channel IGBT module from Fairchild Semiconductor. Features: Low gate charge Low saturation voltage High speed switching High current handling capability Low t
Stock:5000
Minimum:1
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company