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Home > Elec-component > Modules > IGBT
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Description: This is a 15-amp, 1-pole, 120-volt circuit breaker manufactured by Square D. Features: This circuit breaker has a thermal-magnetic trip unit, an interrupt rating of 10kAIC, and is
Stock:5000
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The MG200Q1UK1 is a power module from Mitsubishi Electric. It is a high-performance, low-loss insulated gate bipolar transistor (IGBT) module. This module is designed for use in motor control applicat
Stock:2000
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Stock:2000
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Description: This is a Toshiba IGBT module. Features: High speed switching Low on-state resistance High surge current capability Low inductance Low noise High reliability Applicati
Stock:2000
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Description: Toshiba MG50J1BS11 is a 50A, 600V, IGBT Module. Features: Low saturation voltage High speed switching Low noise operation High temperature operation Low power dissipation
Stock:2000
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Stock:2000
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Description: The MG30G6EL2 is a three-phase brushless motor control module developed by Mitsubishi Electric. Features: High-performance motor control Built-in current limit circuit Built-in over-
Stock:2000
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Description: The BSM35GP120 is an insulated-gate bipolar transistor (IGBT) module from EUPEC. It is a high-voltage, high-speed switching device with a maximum collector-emitter voltage of 1200V and a
Stock:2000
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Description: BSM50GX120DN2 is an EUPEC-made IGBT module designed for medium voltage power conversion applications. It features low conduction and switching losses, fast switching times and low therma
Stock:2000
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Stock:2000
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MODULE
Eupec
00+
IGBT Modules up to 1200V Dual ; Package: AG-62MM-1; IC max: 300.0 A; VCEsat typ: 1.7 V; Configuration: Dual Modules; Technology: IGBT3; Housing: 62 mm;
Description: The FF300R12KE3 is an insulated-gate bipolar transistor (IGBT) module from EUPEC. It is a three-phase inverter module with a voltage rating of 1200V and a current rating of 300A. Feature
Stock:2000
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Description: The BSM150GB120DLC is a 1200V insulated gate bipolar transistor (IGBT) module from EUPEC. Features: - Low conduction and switching losses - High short circuit capability - High current c
Stock:2000
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MODULE
Toshiba America Electronic Components
TRANSISTOR 50 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
Stock:2000
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MODULE
Eupec
IGBT Modules up to 1200V Dual ; Package: AG-62MM-1; IC max: 200.0 A; VCEsat typ: 2.1 V; Configuration: Dual Modules; Technology: IGBT2 Low Loss; Housing: 62 mm;
Description: The BSM200GB120DLC is an insulated-gate bipolar transistor (IGBT) module manufactured by EUPEC. It is a 1200V, 200A module with a maximum junction temperature of 150°C. Features: 1200V/
Stock:2000
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Description: The CM15LD-12H is a 15A, 1200V, IGBT module from Mitsubishi. Features: Low saturation voltage High speed switching Low noise High reliability Low power consumption High
Stock:2000
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The CM4308A2 is a module from CEL that is a dual-channel, high-performance, low-power, digital ambient light and proximity sensor. It is designed to detect ambient light intensity and proximity of obj
Stock:2000
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Description: The FP25R12KE3 is an IGBT module from EUPEC. It is a three-phase inverter module with a rated current of 25A and a maximum voltage of 1200V. Features: Low switching losses High current
Stock:2000
Minimum:1
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MODULE
Eupec
IGBT Modules up to 1200V SixPACK; Package: AG-ECONO2-1; IC max: 75.0 A; VCEsat typ: 1.7 V; Configuration: SixPACK; Technology: IGBT3; Housing: EconoPACK? 2;
FS75R12KE3 is a power module manufactured by Eupec. It is rated for a maximum blocking voltage of 1200V, 3-phase IGBT inverter bridge module, with a maximum collector current of 75A. It is a standardi
Stock:2000
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MG100J2YS1 is an IGBT module manufactured by Mitsubishi Electric. It is a power module with a voltage rating of 600V and a current rating of 100A. It is designed for use in applications such as motor
Stock:2000
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company