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Home > Elec-component > Modules > IGBT
Description: The CM600DU-24NFH is a 600V, 24A, IGBT Module from Mitsubishi. Features: High speed switching Low on-state voltage Low power loss High reliability Easy to mount Applications: The C
Stock:2000
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Stock:2000
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Stock:2000
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MODULE
Toshiba
00+
Vces (volts) = 1200 ;; Ic (amps) = 200 ;; Vce (sat) Max = 3.6 ;; Ton (usec) = 0.2 ;; Toff (usec) = 0.6
Stock:2000
Minimum:1
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MODULE
Toshiba America Electronic Components
00+
TRANSISTOR 50 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
Description: The MG50J2YS45 is a 50A, 600V, three-phase IGBT Module manufactured by Toshiba America Electronic Components. Features: Low switching loss High speed switching Low noise High r
Stock:2000
Minimum:1
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Stock:2000
Minimum:1
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MG15Q6ES1 is a 15kVA three-phase AC power module manufactured by Mitsubishi Electric. It is designed for use in industrial applications such as motor control, power distribution, and other equipment.
Stock:2000
Minimum:1
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MODULE
Toshiba America Electronic Components
00+
TRANSISTOR 200 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
Description: The MG200J2YS40 is a 200A, 600V, three-phase insulated gate bipolar transistor (IGBT) module from Toshiba America Electronic Components. Features: Low saturation voltage High speed
Stock:2000
Minimum:1
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Description: The MG300Q1US41 is a high-performance insulated gate bipolar transistor (IGBT) module manufactured by Toshiba. It is designed for use in motor control applications. Features: High-spe
Stock:2000
Minimum:1
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Stock:2000
Minimum:1
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Stock:2000
Minimum:1
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Description: This is a power module from Mitsubishi Electric. It is a three-phase inverter module with a rated output of 75kW. Features: Rated output of 75kW Three-phase inverter Low noise and
Stock:2000
Minimum:1
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Description: This is a Toshiba IGBT Module. Features: 200A, 600V Low on-state voltage Low switching loss Low noise High speed switching High reliability High surge capability Applications:
Stock:2000
Minimum:1
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Stock:2000
Minimum:1
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Description: The SKM200GB124D is a three-phase bridge rectifier module from Semikron. It is designed for use in high power applications and features a high current capability of 200A. Features: High
Stock:2000
Minimum:1
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Description: The MG600Q2YS60A is an IGBT module designed and manufactured by Mitsubishi Electric. It is a 600V/60A device with a maximum collector-emitter voltage of 600V and a maximum collector curre
Stock:2000
Minimum:1
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Stock:2000
Minimum:1
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MODULE
Toshiba America Electronic Components
00+
TRANSISTOR 25 A, 1000 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
Description: The MG25N6ES42 is a 25A, 600V N-channel IGBT module from Toshiba America Electronic Components. Features: Low on-state resistance Low switching losses High speed switching High
Stock:2000
Minimum:1
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Stock:2000
Minimum:1
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Description: The CM600HA-12H is a 600A, 1200V, insulated-gate bipolar transistor (IGBT) module from Mitsubishi. Features: - Low on-state voltage drop - High speed switching - Low noise - High surge c
Stock:2000
Minimum:1
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company