CM800E3U-24F
MODULE
Mitsubishi
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
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Home > Elec-component > Modules > IGBT
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Mitsubishi
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
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Eupec
IGBT Power Module Solderable Power module 3-phase full-bridge Including fast free-wheel diodes
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MODULE
Eupec
IGBT Modules up to 1600V / 1700V Dual; Package: A-IHM130-2; IC max: 1,200.0 A; VCEsat typ: 2.0 V; Configuration: Dual Modules; Technology: IGBT3; Housing: IHM 130 mm;
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MODULE
Semikron
IGBT Modules up to 1600V / 1700V Dual; Package: AG-ECONOD-3; IC max: 450.0 A; VCEsat typ: 2.0 V; Configuration: Dual Modules; Technology: IGBT3; Housing: EconoDUAL™ 3;
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The FD1056A is a HIT module manufactured by FUJITSU. It is a high-performance, low-power, single-chip, CMOS microcontroller with a 16-bit CPU core. It is designed for use in embedded systems and is su
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MODULE
Siemens
SIMOPAC Module Power module Single switch N channel Enhancement mode
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MODULE
Eupec
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.6KV VBRCES | 1.2KA IC
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MODULE
IGBT Modules up to 1600V / 1700V Single; Package: A-IHM190-2; IC max: 3,600.0 A; VCEsat typ: 2.0 V; Configuration: Single Modules; Technology: IGBT3; Housing: IHM 190 mm;
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MODULE
Eupec
IGBT Modules up to 6500V Single; Package: A-IHV190-3; IC max: 600.0 A; VCEsat typ: 4.3 V; Configuration: Single; Technology: IGBT2 Standard; Housing: IHV 190 mm;
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Description: The FF400R12KT3 is an insulated-gate bipolar transistor (IGBT) module from Eupec. It is a three-phase inverter module with a maximum current rating of 400A. Features: Low switching loss
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MODULE
Eupec
IGBT Modules up to 1200V Dual ; Package: A-IHM130-2; IC max: 800.0 A; VCEsat typ: 2.7 V; Configuration: Dual Modules; Technology: IGBT2 Standard; Housing: IHM 130 mm;
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MODULE
Mitsubishi
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
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MODULE
Eupec
IGBT Modules up to 1200V Single; Package: A-IHM130-2; IC max: 1,600.0 A; VCEsat typ: 2.7 V; Configuration: Single Modules; Technology: IGBT2 Standard; Housing: IHM 130 mm;
Description: This is an EUPEC module manufactured by Infineon Technologies. It is a 1600V, 17kA, IGBT module with a fast-recovery diode. Features: * 1600V blocking voltage * 17kA short-circui
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Description: The CM50FL6-12NFH is a Mitsubishi IGBT module designed for high-speed switching applications. It features a high-speed switching IGBT with an integrated fast recovery diode. Features: H
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MODULE
WIRE, ETFE, TEFZEL, 12AWG, BLACK, 100M; Area, conductor CSA:3.022mm2; Conductor make-up:37/0.320; Voltage rating, AC:600V; Current rating:35A; Colour, primary insulation:Black; Material, primary insulation:Tefzel; Diameter, RoHS Compliant: Yes
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MODULE
Infineon Technologies AG
IGBT Modules up to 1200V SixPACK; Package: AG-ECONO3-1; IC max: 75.0 A; VCEsat typ: 1.7 V; Configuration: SixPACK; Technology: IGBT3 Fast; Housing: EconoPACK™ 3;
Description: Infineon IGBT Module Features: Low switching losses Low on-state resistance High surge current capability High short-circuit withstand capability High temperature operation H
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MODULE
Eupec
62mm C-series module with the fast IGBT2 for high-frequency switching
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Description: The CM50E3Y-24E is a module manufactured by Mitsubishi. It is a 50A, 3-phase, AC contactor with an AC coil voltage of 24V. Features: 50A rated current 3-phase AC contactor AC coil vo
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The BSM50GP120DN2 is a power module manufactured by Infineon Technologies. It is a 1200V, 50A, 2-in-1 IGBT module with a built-in diode. The module is designed for applications such as motor drives, U
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company