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MT48LC8M16A2-75 is a 16Mb (2M x 8/1M x 16) Synchronous DRAM, organized as 2M words by 8 bits or 1M words by 16 bits. It is a low-power, high-speed CMOS double data rate (DDR) synchronous DRAM, designe
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Description: The MT48LC16M16A2P-7E is a 16M x 16-bit (256Mb) synchronous DRAM (SDRAM) organized as 4 banks of 4M x 16 bits. The device is designed to operate in a multiplexed address/data environment
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Description: K9F5608U0C-YCB0 is a 64Mb (8M x 8bit) NAND Flash Memory manufactured by Samsung. Features: 64Mb (8M x 8bit) NAND Flash Memory TSOP48 package Operating voltage: 2.7V - 3.6V Data transf
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TSOP
AMD
05+
16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory
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The MT46V32M16TG-6TF is a 1G x 16 DDR SDRAM manufactured by Micron. It is a double data rate synchronous dynamic random access memory (DDR SDRAM) that is organized as 4 banks of 4M x 16 bits. This dev
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SOP32
Samsung
06+
Circular Connector; Body Material:Composite; Series:RADSOK; No. of Contacts:5; Connecting Termination:Wire; Circular Shell Style:Cable Receptacle; Gender:Receptacle; Wire Size AWG:6-4 RoHS Compliant: Yes
Description: 8Mbit (1M x 8bit / 512K x 16bit) CMOS Static RAM Features: - Low power consumption - Fast access time - High speed operation - Low voltage operation - High noise immunity - Low pow
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Description: The HY27UF081G2A-TPCB is a 1 Gbit (128 M x 8 bits) NAND Flash memory device manufactured by Hynix. It is a TSOP-48 package with a 48-pin configuration. Features: High-speed read acces
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company