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Home > Elec-component > IC Chips > PMIC - Hot Swap Controllers
TSSOP16
Texas Instruments
05+
The TPS2321IPW is a power distribution switch from Texas Instruments. It is a 16-pin TSSOP package and is designed for use in high-current applications. It is a single-channel, low-side switch with a
The TPS2320 and TPS2321 are dual-channel hot-swap controllers that use external N-channel MOSFETs as high-side switches in power applications. Features of these devices, such as overcurrent protection (OCP), inrush-current control, and the ability to discriminate between load transients and faults, are critical requirements for hot-swap applications. The TPS2320/21 devices incorporate undervoltage lockout (UVLO) to ensure the device is off at startup. Each internal charge pump, capable of driving multiple MOSFETs, provides enough gate-drive voltage to fully enhance the N-channel MOSFETs. The charge pumps control both the rise times and fall times (dv/dt) of the MOSFETs, reducing power transients during power up/down. The circuit-breaker functionality combines the ability to sense overcurrent conditions with a timer function; this allows designs such as DSPs, that may have high peak currents during power-state transitions, to disregard transients for a programmable period. DISCH1, DISCH2 – DISCH1 and DISCH2 should be connected to the sources of the external N-channel MOSFET transistors connected to GATE1 and GATE2, respectively. These pins discharge the loads when the MOSFET transistors are disabled. They also serve as reference-voltage connections for internal gate voltage-clamp circuitry. ENABLE or ENABLE – ENABLE for TPS2320 is active low. ENABLE for TPS2321 is active high. When the controller is enabled, both GATE1 and GATE2 voltages will power up to turn on the external MOSFETs. When the ENABLE pin is pulled high for TPS2320 or the ENABLE pin is pulled low for TPS2321 for more than 50 μs, the gate of the MOSFET is discharged at a controlled rate by a current source, and a transistor is enabled to discharge the output bulk capacitance. In addition, the device turns on the internal regulator PREREG (see VREG) when enabled and shuts down PREREG when disabled so that total supply current is much less than 5μA. FAULT – FAULT is an open-drain overcurrent flag output. When an overcurrent condition in either channel is sustained long enough to charge TIMER to 0.5 V, the overcurrent channel latches off and pulls FAULT low. The other channel will run normally if not in overcurrent. In order to turn the channel back on, either the enable pin has to be toggled or the input power has to be cycled. GATE1, GATE2 – GATE1 and GATE2 connect to the gates of external N-channel MOSFET transistors. When the device is enabled, internal charge-pump circuitry pulls these pins up by sourcing approximately 15μA to each. The turnon slew rates depend upon the capacitance present at the GATE1 and GATE2 terminals. If desired, the turnon slew rates can be further reduced by connecting capacitors between these pins and ground. These capacitors also reduce inrush current and protect the device from false overcurrent triggering during power up. The charge-pump circuitry will generate gate-to-source voltages of 9 V-12 V across the external MOSFET transistors. IN1,
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MSOP
Linear
13+
The LTC4252-2IMS#PBF is a dual-channel Hot Swap controller with integrated MOSFETs from Linear Technology. It is designed to control the inrush current and prevent overvoltage and overcurrent conditio
The TPS2320 and TPS2321 are dual-channel hot-swap controllers that use external N-channel MOSFETs as high-side switches in power applications. Features of these devices, such as overcurrent protection (OCP), inrush-current control, and the ability to discriminate between load transients and faults, are critical requirements for hot-swap applications. The TPS2320/21 devices incorporate undervoltage lockout (UVLO) to ensure the device is off at startup. Each internal charge pump, capable of driving multiple MOSFETs, provides enough gate-drive voltage to fully enhance the N-channel MOSFETs. The charge pumps control both the rise times and fall times (dv/dt) of the MOSFETs, reducing power transients during power up/down. The circuit-breaker functionality combines the ability to sense overcurrent conditions with a timer function; this allows designs such as DSPs, that may have high peak currents during power-state transitions, to disregard transients for a programmable period. DISCH1, DISCH2 – DISCH1 and DISCH2 should be connected to the sources of the external N-channel MOSFET transistors connected to GATE1 and GATE2, respectively. These pins discharge the loads when the MOSFET transistors are disabled. They also serve as reference-voltage connections for internal gate voltage-clamp circuitry. ENABLE or ENABLE – ENABLE for TPS2320 is active low. ENABLE for TPS2321 is active high. When the controller is enabled, both GATE1 and GATE2 voltages will power up to turn on the external MOSFETs. When the ENABLE pin is pulled high for TPS2320 or the ENABLE pin is pulled low for TPS2321 for more than 50 μs, the gate of the MOSFET is discharged at a controlled rate by a current source, and a transistor is enabled to discharge the output bulk capacitance. In addition, the device turns on the internal regulator PREREG (see VREG) when enabled and shuts down PREREG when disabled so that total supply current is much less than 5μA. FAULT – FAULT is an open-drain overcurrent flag output. When an overcurrent condition in either channel is sustained long enough to charge TIMER to 0.5 V, the overcurrent channel latches off and pulls FAULT low. The other channel will run normally if not in overcurrent. In order to turn the channel back on, either the enable pin has to be toggled or the input power has to be cycled. GATE1, GATE2 – GATE1 and GATE2 connect to the gates of external N-channel MOSFET transistors. When the device is enabled, internal charge-pump circuitry pulls these pins up by sourcing approximately 15μA to each. The turnon slew rates depend upon the capacitance present at the GATE1 and GATE2 terminals. If desired, the turnon slew rates can be further reduced by connecting capacitors between these pins and ground. These capacitors also reduce inrush current and protect the device from false overcurrent triggering during power up. The charge-pump circuitry will generate gate-to-source voltages of 9 V-12 V across the external MOSFET transistors. IN1,
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MSOP-8
National Semiconductor
11+
Description: The LM5068MM-2/NOPB is an integrated circuit (IC) designed for use in high-efficiency, low-noise, low-ripple, high-current DC/DC converters. It is a dual-channel, high-side, low-side, and
The TPS2320 and TPS2321 are dual-channel hot-swap controllers that use external N-channel MOSFETs as high-side switches in power applications. Features of these devices, such as overcurrent protection (OCP), inrush-current control, and the ability to discriminate between load transients and faults, are critical requirements for hot-swap applications. The TPS2320/21 devices incorporate undervoltage lockout (UVLO) to ensure the device is off at startup. Each internal charge pump, capable of driving multiple MOSFETs, provides enough gate-drive voltage to fully enhance the N-channel MOSFETs. The charge pumps control both the rise times and fall times (dv/dt) of the MOSFETs, reducing power transients during power up/down. The circuit-breaker functionality combines the ability to sense overcurrent conditions with a timer function; this allows designs such as DSPs, that may have high peak currents during power-state transitions, to disregard transients for a programmable period. DISCH1, DISCH2 – DISCH1 and DISCH2 should be connected to the sources of the external N-channel MOSFET transistors connected to GATE1 and GATE2, respectively. These pins discharge the loads when the MOSFET transistors are disabled. They also serve as reference-voltage connections for internal gate voltage-clamp circuitry. ENABLE or ENABLE – ENABLE for TPS2320 is active low. ENABLE for TPS2321 is active high. When the controller is enabled, both GATE1 and GATE2 voltages will power up to turn on the external MOSFETs. When the ENABLE pin is pulled high for TPS2320 or the ENABLE pin is pulled low for TPS2321 for more than 50 μs, the gate of the MOSFET is discharged at a controlled rate by a current source, and a transistor is enabled to discharge the output bulk capacitance. In addition, the device turns on the internal regulator PREREG (see VREG) when enabled and shuts down PREREG when disabled so that total supply current is much less than 5μA. FAULT – FAULT is an open-drain overcurrent flag output. When an overcurrent condition in either channel is sustained long enough to charge TIMER to 0.5 V, the overcurrent channel latches off and pulls FAULT low. The other channel will run normally if not in overcurrent. In order to turn the channel back on, either the enable pin has to be toggled or the input power has to be cycled. GATE1, GATE2 – GATE1 and GATE2 connect to the gates of external N-channel MOSFET transistors. When the device is enabled, internal charge-pump circuitry pulls these pins up by sourcing approximately 15μA to each. The turnon slew rates depend upon the capacitance present at the GATE1 and GATE2 terminals. If desired, the turnon slew rates can be further reduced by connecting capacitors between these pins and ground. These capacitors also reduce inrush current and protect the device from false overcurrent triggering during power up. The charge-pump circuitry will generate gate-to-source voltages of 9 V-12 V across the external MOSFET transistors. IN1,
Stock:2000
Minimum:1
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SOP-8
Maxim Integrated
06+
Description: The MAX5911ESA is a low-noise, low-dropout (LDO) linear regulator with an adjustable output voltage range of 0.8V to 5.5V. It offers fast transient response and low output noise, making i
-48V Simple Swapper Hot-Swap Switches
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MSOP
Texas Instruments
2015+
The TPS2320 and TPS2321 are dual-channel hot-swap controllers that use external N-channel MOSFETs as high-side switches in power applications. Features of these devices, such as overcurrent protection (OCP), inrush-current control, and the ability to discriminate between load transients and faults, are critical requirements for hot-swap applications. The TPS2320/21 devices incorporate undervoltage lockout (UVLO) to ensure the device is off at startup. Each internal charge pump, capable of driving multiple MOSFETs, provides enough gate-drive voltage to fully enhance the N-channel MOSFETs. The charge pumps control both the rise times and fall times (dv/dt) of the MOSFETs, reducing power transients during power up/down. The circuit-breaker functionality combines the ability to sense overcurrent conditions with a timer function; this allows designs such as DSPs, that may have high peak currents during power-state transitions, to disregard transients for a programmable period. DISCH1, DISCH2 – DISCH1 and DISCH2 should be connected to the sources of the external N-channel MOSFET transistors connected to GATE1 and GATE2, respectively. These pins discharge the loads when the MOSFET transistors are disabled. They also serve as reference-voltage connections for internal gate voltage-clamp circuitry. ENABLE or ENABLE – ENABLE for TPS2320 is active low. ENABLE for TPS2321 is active high. When the controller is enabled, both GATE1 and GATE2 voltages will power up to turn on the external MOSFETs. When the ENABLE pin is pulled high for TPS2320 or the ENABLE pin is pulled low for TPS2321 for more than 50 μs, the gate of the MOSFET is discharged at a controlled rate by a current source, and a transistor is enabled to discharge the output bulk capacitance. In addition, the device turns on the internal regulator PREREG (see VREG) when enabled and shuts down PREREG when disabled so that total supply current is much less than 5μA. FAULT – FAULT is an open-drain overcurrent flag output. When an overcurrent condition in either channel is sustained long enough to charge TIMER to 0.5 V, the overcurrent channel latches off and pulls FAULT low. The other channel will run normally if not in overcurrent. In order to turn the channel back on, either the enable pin has to be toggled or the input power has to be cycled. GATE1, GATE2 – GATE1 and GATE2 connect to the gates of external N-channel MOSFET transistors. When the device is enabled, internal charge-pump circuitry pulls these pins up by sourcing approximately 15μA to each. The turnon slew rates depend upon the capacitance present at the GATE1 and GATE2 terminals. If desired, the turnon slew rates can be further reduced by connecting capacitors between these pins and ground. These capacitors also reduce inrush current and protect the device from false overcurrent triggering during power up. The charge-pump circuitry will generate gate-to-source voltages of 9 V-12 V across the external MOSFET transistors. IN1,
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SOP8
LT
14+
#TRPBF Description: The LTC4211 is a high side power distribution switch that can be used to control the power distribution of up to four independent loads. It features an adjustable current limit an
The TPS2320 and TPS2321 are dual-channel hot-swap controllers that use external N-channel MOSFETs as high-side switches in power applications. Features of these devices, such as overcurrent protection (OCP), inrush-current control, and the ability to discriminate between load transients and faults, are critical requirements for hot-swap applications. The TPS2320/21 devices incorporate undervoltage lockout (UVLO) to ensure the device is off at startup. Each internal charge pump, capable of driving multiple MOSFETs, provides enough gate-drive voltage to fully enhance the N-channel MOSFETs. The charge pumps control both the rise times and fall times (dv/dt) of the MOSFETs, reducing power transients during power up/down. The circuit-breaker functionality combines the ability to sense overcurrent conditions with a timer function; this allows designs such as DSPs, that may have high peak currents during power-state transitions, to disregard transients for a programmable period. DISCH1, DISCH2 – DISCH1 and DISCH2 should be connected to the sources of the external N-channel MOSFET transistors connected to GATE1 and GATE2, respectively. These pins discharge the loads when the MOSFET transistors are disabled. They also serve as reference-voltage connections for internal gate voltage-clamp circuitry. ENABLE or ENABLE – ENABLE for TPS2320 is active low. ENABLE for TPS2321 is active high. When the controller is enabled, both GATE1 and GATE2 voltages will power up to turn on the external MOSFETs. When the ENABLE pin is pulled high for TPS2320 or the ENABLE pin is pulled low for TPS2321 for more than 50 μs, the gate of the MOSFET is discharged at a controlled rate by a current source, and a transistor is enabled to discharge the output bulk capacitance. In addition, the device turns on the internal regulator PREREG (see VREG) when enabled and shuts down PREREG when disabled so that total supply current is much less than 5μA. FAULT – FAULT is an open-drain overcurrent flag output. When an overcurrent condition in either channel is sustained long enough to charge TIMER to 0.5 V, the overcurrent channel latches off and pulls FAULT low. The other channel will run normally if not in overcurrent. In order to turn the channel back on, either the enable pin has to be toggled or the input power has to be cycled. GATE1, GATE2 – GATE1 and GATE2 connect to the gates of external N-channel MOSFET transistors. When the device is enabled, internal charge-pump circuitry pulls these pins up by sourcing approximately 15μA to each. The turnon slew rates depend upon the capacitance present at the GATE1 and GATE2 terminals. If desired, the turnon slew rates can be further reduced by connecting capacitors between these pins and ground. These capacitors also reduce inrush current and protect the device from false overcurrent triggering during power up. The charge-pump circuitry will generate gate-to-source voltages of 9 V-12 V across the external MOSFET transistors. IN1,
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QFN
Linear
13+
The LTC4261CUFD-2#PBF is a high-side power switch with an integrated current sense amplifier. It is designed to provide a low-resistance, high-current path between a power supply and a load. The integ
The TPS2320 and TPS2321 are dual-channel hot-swap controllers that use external N-channel MOSFETs as high-side switches in power applications. Features of these devices, such as overcurrent protection (OCP), inrush-current control, and the ability to discriminate between load transients and faults, are critical requirements for hot-swap applications. The TPS2320/21 devices incorporate undervoltage lockout (UVLO) to ensure the device is off at startup. Each internal charge pump, capable of driving multiple MOSFETs, provides enough gate-drive voltage to fully enhance the N-channel MOSFETs. The charge pumps control both the rise times and fall times (dv/dt) of the MOSFETs, reducing power transients during power up/down. The circuit-breaker functionality combines the ability to sense overcurrent conditions with a timer function; this allows designs such as DSPs, that may have high peak currents during power-state transitions, to disregard transients for a programmable period. DISCH1, DISCH2 – DISCH1 and DISCH2 should be connected to the sources of the external N-channel MOSFET transistors connected to GATE1 and GATE2, respectively. These pins discharge the loads when the MOSFET transistors are disabled. They also serve as reference-voltage connections for internal gate voltage-clamp circuitry. ENABLE or ENABLE – ENABLE for TPS2320 is active low. ENABLE for TPS2321 is active high. When the controller is enabled, both GATE1 and GATE2 voltages will power up to turn on the external MOSFETs. When the ENABLE pin is pulled high for TPS2320 or the ENABLE pin is pulled low for TPS2321 for more than 50 μs, the gate of the MOSFET is discharged at a controlled rate by a current source, and a transistor is enabled to discharge the output bulk capacitance. In addition, the device turns on the internal regulator PREREG (see VREG) when enabled and shuts down PREREG when disabled so that total supply current is much less than 5μA. FAULT – FAULT is an open-drain overcurrent flag output. When an overcurrent condition in either channel is sustained long enough to charge TIMER to 0.5 V, the overcurrent channel latches off and pulls FAULT low. The other channel will run normally if not in overcurrent. In order to turn the channel back on, either the enable pin has to be toggled or the input power has to be cycled. GATE1, GATE2 – GATE1 and GATE2 connect to the gates of external N-channel MOSFET transistors. When the device is enabled, internal charge-pump circuitry pulls these pins up by sourcing approximately 15μA to each. The turnon slew rates depend upon the capacitance present at the GATE1 and GATE2 terminals. If desired, the turnon slew rates can be further reduced by connecting capacitors between these pins and ground. These capacitors also reduce inrush current and protect the device from false overcurrent triggering during power up. The charge-pump circuitry will generate gate-to-source voltages of 9 V-12 V across the external MOSFET transistors. IN1,
Stock:5000
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SOP8
Micrel
0525
Description: The MIC2587 is a low-side power switch with an integrated charge pump that provides a regulated gate drive voltage for the power MOSFET. Features: Low-side power switch with integrated
CTRLR HOTSWAP 1CHAN POS 8SOIC
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SOT-23
Linear
2013+
#TRPBF Description: The LTC4251 is a low voltage, low power, precision current monitor with an adjustable current threshold. It is designed to monitor current in a variety of applications, including
IC CTRLR HOTSWAP NEGVOLT SOT23-6
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MSOP10
Linear Technology
Hot Swap Controllers, Linear Technology Linear Technology offer a range of Hot Swap controllers providing circuit protection by limiting inrush current as well as fault isolation. They allow electronic circuit boards and cards to be inserted into live system backplanes. Hot Swap controller will sense, control and operate continuously as the boards are hot plugged in or pulled out. They can present board power monitoring via digital measurements of the current and voltage levels by integrated ADCs, accessible through I2C/SMBus interfaces. Linear Technology’s Hot Swap controllers utilise N-channel MOSFETs to control power flow, which allows a wide range of load currents and operating voltages. These devices are often used in applications such as: Server rack mount systems Distributed power systems Medical Systems, Telecom systems Set Top Boxes High side switch/circuit breakers Switchers / Routers
Stock:10000
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TSSOP
Texas Instruments
02+
The TPS2320 and TPS2321 are dual-channel hot-swap controllers that use external N-channel MOSFETs as high-side switches in power applications. Features of these devices, such as overcurrent protection (OCP), inrush-current control, and the ability to discriminate between load transients and faults, are critical requirements for hot-swap applications. The TPS2320/21 devices incorporate undervoltage lockout (UVLO) to ensure the device is off at startup. Each internal charge pump, capable of driving multiple MOSFETs, provides enough gate-drive voltage to fully enhance the N-channel MOSFETs. The charge pumps control both the rise times and fall times (dv/dt) of the MOSFETs, reducing power transients during power up/down. The circuit-breaker functionality combines the ability to sense overcurrent conditions with a timer function; this allows designs such as DSPs, that may have high peak currents during power-state transitions, to disregard transients for a programmable period. DISCH1, DISCH2 – DISCH1 and DISCH2 should be connected to the sources of the external N-channel MOSFET transistors connected to GATE1 and GATE2, respectively. These pins discharge the loads when the MOSFET transistors are disabled. They also serve as reference-voltage connections for internal gate voltage-clamp circuitry. ENABLE or ENABLE – ENABLE for TPS2320 is active low. ENABLE for TPS2321 is active high. When the controller is enabled, both GATE1 and GATE2 voltages will power up to turn on the external MOSFETs. When the ENABLE pin is pulled high for TPS2320 or the ENABLE pin is pulled low for TPS2321 for more than 50 μs, the gate of the MOSFET is discharged at a controlled rate by a current source, and a transistor is enabled to discharge the output bulk capacitance. In addition, the device turns on the internal regulator PREREG (see VREG) when enabled and shuts down PREREG when disabled so that total supply current is much less than 5μA. FAULT – FAULT is an open-drain overcurrent flag output. When an overcurrent condition in either channel is sustained long enough to charge TIMER to 0.5 V, the overcurrent channel latches off and pulls FAULT low. The other channel will run normally if not in overcurrent. In order to turn the channel back on, either the enable pin has to be toggled or the input power has to be cycled. GATE1, GATE2 – GATE1 and GATE2 connect to the gates of external N-channel MOSFET transistors. When the device is enabled, internal charge-pump circuitry pulls these pins up by sourcing approximately 15μA to each. The turnon slew rates depend upon the capacitance present at the GATE1 and GATE2 terminals. If desired, the turnon slew rates can be further reduced by connecting capacitors between these pins and ground. These capacitors also reduce inrush current and protect the device from false overcurrent triggering during power up. The charge-pump circuitry will generate gate-to-source voltages of 9 V-12 V across the external MOSFET transistors. IN1,
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SSOP-20
Ltnear
05+
Triple Hot Swap Controller with Multifunction Current Control
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MSOP10
Linear
10+
The TPS2320 and TPS2321 are dual-channel hot-swap controllers that use external N-channel MOSFETs as high-side switches in power applications. Features of these devices, such as overcurrent protection (OCP), inrush-current control, and the ability to discriminate between load transients and faults, are critical requirements for hot-swap applications. The TPS2320/21 devices incorporate undervoltage lockout (UVLO) to ensure the device is off at startup. Each internal charge pump, capable of driving multiple MOSFETs, provides enough gate-drive voltage to fully enhance the N-channel MOSFETs. The charge pumps control both the rise times and fall times (dv/dt) of the MOSFETs, reducing power transients during power up/down. The circuit-breaker functionality combines the ability to sense overcurrent conditions with a timer function; this allows designs such as DSPs, that may have high peak currents during power-state transitions, to disregard transients for a programmable period. DISCH1, DISCH2 – DISCH1 and DISCH2 should be connected to the sources of the external N-channel MOSFET transistors connected to GATE1 and GATE2, respectively. These pins discharge the loads when the MOSFET transistors are disabled. They also serve as reference-voltage connections for internal gate voltage-clamp circuitry. ENABLE or ENABLE – ENABLE for TPS2320 is active low. ENABLE for TPS2321 is active high. When the controller is enabled, both GATE1 and GATE2 voltages will power up to turn on the external MOSFETs. When the ENABLE pin is pulled high for TPS2320 or the ENABLE pin is pulled low for TPS2321 for more than 50 μs, the gate of the MOSFET is discharged at a controlled rate by a current source, and a transistor is enabled to discharge the output bulk capacitance. In addition, the device turns on the internal regulator PREREG (see VREG) when enabled and shuts down PREREG when disabled so that total supply current is much less than 5μA. FAULT – FAULT is an open-drain overcurrent flag output. When an overcurrent condition in either channel is sustained long enough to charge TIMER to 0.5 V, the overcurrent channel latches off and pulls FAULT low. The other channel will run normally if not in overcurrent. In order to turn the channel back on, either the enable pin has to be toggled or the input power has to be cycled. GATE1, GATE2 – GATE1 and GATE2 connect to the gates of external N-channel MOSFET transistors. When the device is enabled, internal charge-pump circuitry pulls these pins up by sourcing approximately 15μA to each. The turnon slew rates depend upon the capacitance present at the GATE1 and GATE2 terminals. If desired, the turnon slew rates can be further reduced by connecting capacitors between these pins and ground. These capacitors also reduce inrush current and protect the device from false overcurrent triggering during power up. The charge-pump circuitry will generate gate-to-source voltages of 9 V-12 V across the external MOSFET transistors. IN1,
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QFN
Linear
13+
#PBF Description: The LTC4280CUFD#PBF is a dual power path controller with I2C interface. It is designed to provide a simple and reliable solution for managing power in systems with multiple power so
The TPS2320 and TPS2321 are dual-channel hot-swap controllers that use external N-channel MOSFETs as high-side switches in power applications. Features of these devices, such as overcurrent protection (OCP), inrush-current control, and the ability to discriminate between load transients and faults, are critical requirements for hot-swap applications. The TPS2320/21 devices incorporate undervoltage lockout (UVLO) to ensure the device is off at startup. Each internal charge pump, capable of driving multiple MOSFETs, provides enough gate-drive voltage to fully enhance the N-channel MOSFETs. The charge pumps control both the rise times and fall times (dv/dt) of the MOSFETs, reducing power transients during power up/down. The circuit-breaker functionality combines the ability to sense overcurrent conditions with a timer function; this allows designs such as DSPs, that may have high peak currents during power-state transitions, to disregard transients for a programmable period. DISCH1, DISCH2 – DISCH1 and DISCH2 should be connected to the sources of the external N-channel MOSFET transistors connected to GATE1 and GATE2, respectively. These pins discharge the loads when the MOSFET transistors are disabled. They also serve as reference-voltage connections for internal gate voltage-clamp circuitry. ENABLE or ENABLE – ENABLE for TPS2320 is active low. ENABLE for TPS2321 is active high. When the controller is enabled, both GATE1 and GATE2 voltages will power up to turn on the external MOSFETs. When the ENABLE pin is pulled high for TPS2320 or the ENABLE pin is pulled low for TPS2321 for more than 50 μs, the gate of the MOSFET is discharged at a controlled rate by a current source, and a transistor is enabled to discharge the output bulk capacitance. In addition, the device turns on the internal regulator PREREG (see VREG) when enabled and shuts down PREREG when disabled so that total supply current is much less than 5μA. FAULT – FAULT is an open-drain overcurrent flag output. When an overcurrent condition in either channel is sustained long enough to charge TIMER to 0.5 V, the overcurrent channel latches off and pulls FAULT low. The other channel will run normally if not in overcurrent. In order to turn the channel back on, either the enable pin has to be toggled or the input power has to be cycled. GATE1, GATE2 – GATE1 and GATE2 connect to the gates of external N-channel MOSFET transistors. When the device is enabled, internal charge-pump circuitry pulls these pins up by sourcing approximately 15μA to each. The turnon slew rates depend upon the capacitance present at the GATE1 and GATE2 terminals. If desired, the turnon slew rates can be further reduced by connecting capacitors between these pins and ground. These capacitors also reduce inrush current and protect the device from false overcurrent triggering during power up. The charge-pump circuitry will generate gate-to-source voltages of 9 V-12 V across the external MOSFET transistors. IN1,
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company