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IGBT

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FS225R12KE3_S1

Parameter Symbol Min Typ Max Unit Description Collector-Emitter Voltage VCE - - 1200 V Maximum voltage between collector and emitter Collector Current IC - - 25 A Maximum current through the

Utsource Original Store

≥1:

US $460.35000

US $432.72900

≥2:

US $429.66000

US $403.88040

≥5:

US $429.66000

US $403.88040

≥10:

US $429.66000

US $403.88040

≥20:

US $429.66000

US $403.88040

≥30:

US $429.66000

US $403.88040

≥50:

US $429.66000

US $403.88040

≥100:

US $426.59100

US $400.99554

≥500:

US $423.52200

US $398.11068

From: US $423.52200

BSM75GB120DLC

Parameter Symbol Min Typ Max Unit Description Blocking Voltage V(BR)DSS - 1200 - V Drain-Source Breakdown Voltage Continuous Drain Current ID - - 75 A Continuous Drain Current at Tc=25°C Po

Utsource Original Store

≥1:

US $45.01200

US $42.31128

≥2:

US $45.01200

US $42.31128

≥5:

US $43.51160

US $40.90090

≥10:

US $42.91144

US $40.33675

≥20:

US $42.61136

US $40.05468

≥30:

US $42.01120

US $39.49053

≥50:

US $42.01120

US $39.49053

≥100:

US $41.71112

US $39.20845

≥500:

US $41.41104

US $38.92638

From: US $41.41104

2MBI200U2A-060-50

MODULE

Fuji Electric

18+

2MBI200U2A-060-50 is a 200A/600V IGBT module manufactured by Fuji Electric. It features a low saturation voltage, high speed switching, and high reliability. This module is suitable for use in motor c

Utsource Original Store

≥1:

US $153.45000

US $144.24300

≥2:

US $153.45000

US $144.24300

≥5:

US $143.22000

US $134.62680

≥10:

US $143.22000

US $134.62680

≥20:

US $143.22000

US $134.62680

≥30:

US $143.22000

US $134.62680

≥50:

US $143.22000

US $134.62680

≥100:

US $142.19700

US $133.66518

≥500:

US $141.17400

US $132.70356

From: US $141.17400

IRG4PC40W 27A600V TO247 G4PC40W

TO-247

International Rectifier

Parameter Value Unit Part Number IRG4PC40W - Package TO-247 - Maximum Drain-to-Source Voltage (VDS(max)) 600 V Continuous Drain Current (ID) at 25°C 27 A Pulsed Drain Current (IDM) at 2

Utsource Original Store

≥1:

US $8.18400

US $7.69296

≥5:

US $7.77480

US $7.30831

≥10:

US $7.36560

US $6.92366

≥20:

US $7.16100

US $6.73134

≥50:

US $6.95640

US $6.53902

≥100:

US $6.75180

US $6.34669

≥200:

US $6.54720

US $6.15437

≥500:

US $6.46536

US $6.07744

≥1000:

US $6.34260

US $5.96204

From: US $6.34260

IRG4PC40W 27A600V TO247 G4PC40W

TO-247

International Rectifier

Parameter Value Unit Part Number IRG4PC40W - Package TO-247 - Maximum Drain-to-Source Voltage (VDS(max)) 600 V Continuous Drain Current (ID) at 25°C 27 A Pulsed Drain Current (IDM) at 2

Utsource Original Store

≥1:

US $6.82000

US $6.41080

≥5:

US $6.47900

US $6.09026

≥10:

US $6.13800

US $5.76972

≥20:

US $5.96750

US $5.60945

≥50:

US $5.79700

US $5.44918

≥100:

US $5.62650

US $5.28891

≥200:

US $5.45600

US $5.12864

≥500:

US $5.38780

US $5.06453

≥1000:

US $5.28550

US $4.96837

From: US $5.28550

2MBI300VB-060-50

MODULE

Fuji Electric

23+

Parameter Symbol Min Typ Max Unit Description Blocking Voltage V_B - 600 - V Maximum repetitive peak off-state voltage On-State Voltage V_T 1.7 - 2.0 V On-state forward drop at specified curr

Utsource Original Store

≥1:

US $66.49500

US $62.50530

≥2:

US $66.49500

US $62.50530

≥5:

US $62.06200

US $58.33828

≥10:

US $62.06200

US $58.33828

≥20:

US $62.06200

US $58.33828

≥30:

US $62.06200

US $58.33828

≥50:

US $62.06200

US $58.33828

≥100:

US $61.61870

US $57.92158

≥500:

US $61.17540

US $57.50488

From: US $61.17540

GIPS10K60T

DIP25

STMicroelectronics

134

Parameter Description Value Part Number Unique identifier for the component GIPS10K60T Type Type of device IGBT Voltage Rating Maximum voltage the device can handle 600V Current Rating Ma

Utsource Original Store

≥1:

US $30.69000

US $28.84860

≥2:

US $30.69000

US $28.84860

≥5:

US $29.66700

US $27.88698

≥10:

US $29.25780

US $27.50233

≥20:

US $29.05320

US $27.31001

≥30:

US $28.64400

US $26.92536

≥50:

US $28.64400

US $26.92536

≥100:

US $28.43940

US $26.73304

≥500:

US $28.23480

US $26.54071

From: US $28.23480

SKM100GB123D

MODULE

Semikron

2012+

Parameter Symbol Min Typ Max Unit Description Rated Voltage VDSS - 1200 - V Drain-Source voltage Rated Current ID - 100 - A Continuous drain current at Tc=25°C On-State Resistance RDS(on) 1

Utsource Original Store

≥1:

US $36.82800

US $34.61832

≥2:

US $36.82800

US $34.61832

≥5:

US $35.60040

US $33.46438

≥10:

US $35.10936

US $33.00280

≥20:

US $34.86384

US $32.77201

≥30:

US $34.37280

US $32.31043

≥50:

US $34.37280

US $32.31043

≥100:

US $34.12728

US $32.07964

≥500:

US $33.88176

US $31.84885

From: US $33.88176

CM1200HA-24J

MODULE

Mitsubis

00+

Single IGBTMOD⑩ H-Series Module 1200 Amperes/1200 Volts

Utsource Original Store

≥1:

US $429.66000

US $403.88040

≥2:

US $401.01600

US $376.95504

≥5:

US $401.01600

US $376.95504

≥10:

US $401.01600

US $376.95504

≥20:

US $401.01600

US $376.95504

≥30:

US $401.01600

US $376.95504

≥50:

US $401.01600

US $376.95504

≥100:

US $398.15160

US $374.26250

≥500:

US $395.28720

US $371.56997

From: US $395.28720

K30H603 IKW30N60H3

TO-247

Infineon Technologies AG

Parameter Symbol Min Typ Max Unit Description Collector-Emitter Voltage VCEO - 600 - V Maximum voltage between collector and emitter with the base open. Collector-Base Voltage VCBO - 650 - V

Utsource Original Store

≥1:

US $4.09200

US $3.84648

≥5:

US $3.88740

US $3.65416

≥10:

US $3.68280

US $3.46183

≥20:

US $3.58050

US $3.36567

≥50:

US $3.47820

US $3.26951

≥100:

US $3.37590

US $3.17335

≥200:

US $3.27360

US $3.07718

≥500:

US $3.23268

US $3.03872

≥1000:

US $3.17130

US $2.98102

From: US $3.17130

DSEI2X101-12A

MODULE

IXYS

15+

The IXYS DSEI2X101-12A is a dual SCR module with a blocking voltage of 1200V and a current rating of 10A. It is designed for use in power control applications such as motor control, power supplies, an

Utsource Original Store

≥1:

US $23.93820

US $22.50191

≥2:

US $23.93820

US $22.50191

≥5:

US $23.14026

US $21.75184

≥10:

US $22.82108

US $21.45182

≥20:

US $22.66150

US $21.30181

≥30:

US $22.34232

US $21.00178

≥50:

US $22.34232

US $21.00178

≥100:

US $22.18273

US $20.85177

≥500:

US $22.02314

US $20.70176

From: US $22.02314

G60N90 G60N90DG3

TO-264

FSC

n/a

Parameter G60N90 G60N90DG3 Type N-channel MOSFET N-channel MOSFET Voltage (Vds) 600 V 600 V Current (Ids) 90 A 90 A Power Dissipation (Ptot) - - Rds(on) - - Gate Charge (Qg) - - Pac

Utsource Original Store

≥1:

US $4.09200

US $3.84648

≥5:

US $3.88740

US $3.65416

≥10:

US $3.68280

US $3.46183

≥20:

US $3.58050

US $3.36567

≥50:

US $3.47820

US $3.26951

≥100:

US $3.37590

US $3.17335

≥200:

US $3.27360

US $3.07718

≥500:

US $3.23268

US $3.03872

≥1000:

US $3.17130

US $2.98102

From: US $3.17130

7MBP50RA120-55

MODULE

Fuji Electric

18+

Parameter Description Value Part Number 7MBP50RA120-55 - Type IGBT Module - Voltage Rating (Vces) Collector-Emitter Breakdown Voltage 1200 V Current Rating (Ic) Continuous Collector Curre

Utsource Original Store

≥1:

US $118.66800

US $111.54792

≥2:

US $118.66800

US $111.54792

≥5:

US $110.75680

US $104.11139

≥10:

US $110.75680

US $104.11139

≥20:

US $110.75680

US $104.11139

≥30:

US $110.75680

US $104.11139

≥50:

US $110.75680

US $104.11139

≥100:

US $109.96568

US $103.36774

≥500:

US $109.17456

US $102.62409

From: US $109.17456

SKM200GB125D

MODULE

Semikron

15+

Parameter Symbol Min Typ Max Unit Conditions Collector-Emitter Voltage V CES 1250 V Emitter-Collector Voltage V ECS -5 V Gate-Emitter Voltage V GES -20 20 V Continuous Collector C

Utsource Original Store

≥1:

US $87.97800

US $82.69932

≥2:

US $87.97800

US $82.69932

≥5:

US $82.11280

US $77.18603

≥10:

US $82.11280

US $77.18603

≥20:

US $82.11280

US $77.18603

≥30:

US $82.11280

US $77.18603

≥50:

US $82.11280

US $77.18603

≥100:

US $81.52628

US $76.63470

≥500:

US $80.93976

US $76.08337

From: US $80.93976

SKKD212/16

MODULE

Parameter Description Value Unit Device Type Description Dual N-Channel Enhancement Mode MOSFET - VDS Drain-to-Source Voltage 200 V VGS Gate-to-Source Voltage ±20 V ID Continuous Drain Cu

Utsource Original Store

≥1:

US $28.64400

US $26.92536

≥2:

US $28.64400

US $26.92536

≥5:

US $27.68920

US $26.02785

≥10:

US $27.30728

US $25.66884

≥20:

US $27.11632

US $25.48934

≥30:

US $26.73440

US $25.13034

≥50:

US $26.73440

US $25.13034

≥100:

US $26.54344

US $24.95083

≥500:

US $26.35248

US $24.77133

From: US $26.35248

SKM200GB12T4

module

Semikron

23+

Parameter Symbol Value Unit Test Conditions Rated Voltage VDRM 1200 V - Rated Current IC 200 A Tj = 25°C Continuous Forward Current IF(AV) 200 A TC = 80°C Peak Forward Current IFSM 600 A

Utsource Original Store

≥1:

US $68.54100

US $64.42854

≥2:

US $68.54100

US $64.42854

≥5:

US $63.97160

US $60.13330

≥10:

US $63.97160

US $60.13330

≥20:

US $63.97160

US $60.13330

≥30:

US $63.97160

US $60.13330

≥50:

US $63.97160

US $60.13330

≥100:

US $63.51466

US $59.70378

≥500:

US $63.05772

US $59.27426

From: US $63.05772

FP50R12KT4

MODULE

Infineon Technologies AG

2018+

Description: Infineon IGBT Module Features: Low switching losses Low conduction losses Low gate charge Short circuit withstand capability Very fast switching High temperature operation Low indu

Utsource Original Store

≥1:

US $67.51800

US $63.46692

≥2:

US $67.51800

US $63.46692

≥5:

US $63.01680

US $59.23579

≥10:

US $63.01680

US $59.23579

≥20:

US $63.01680

US $59.23579

≥30:

US $63.01680

US $59.23579

≥50:

US $63.01680

US $59.23579

≥100:

US $62.56668

US $58.81268

≥500:

US $62.11656

US $58.38957

From: US $62.11656

SGP15N60

TO-220

Infineon Technologies AG

Parameter Symbol Min Typical Max Unit Description Breakdown Voltage V(BR)DSS - 600 - V Drain-to-Source Breakdown Voltage Drain Current ID - 15 - A Continuous Drain Current at Tc = 25°C Puls

Utsource Original Store

≥1:

US $0.57288

US $0.53851

≥51:

US $0.53469

US $0.50261

≥501:

US $0.47740

US $0.44876

≥1001:

US $0.43921

US $0.41286

From: US $0.43921

2MBI900VXA-120P-50

MODULE

Fuji Electric

15

Parameter Description Part Number 2MBI900VXA-120P-50 Type IGBT Module Voltage Rating (VDC) 900 V Current Rating (IC, AV) (A) 120 A (Average RMS Current) Switching Frequency Optimized fo

Utsource Original Store

≥1:

US $296.67000

US $278.86980

≥2:

US $276.89200

US $260.27848

≥5:

US $276.89200

US $260.27848

≥10:

US $276.89200

US $260.27848

≥20:

US $276.89200

US $260.27848

≥30:

US $276.89200

US $260.27848

≥50:

US $276.89200

US $260.27848

≥100:

US $274.91420

US $258.41935

≥500:

US $272.93640

US $256.56022

From: US $272.93640

BSM50GX120DN2

MODULE

Eupec

Below is the parameter table and instructions for the BSM50GX120DN2, a high-performance IGBT (Insulated Gate Bipolar Transistor) from Infineon Technologies. BSM50GX120DN2 Parameter Table Parameter

Utsource Original Store

≥1:

US $90.02400

US $84.62256

≥2:

US $90.02400

US $84.62256

≥5:

US $84.02240

US $78.98106

≥10:

US $84.02240

US $78.98106

≥20:

US $84.02240

US $78.98106

≥30:

US $84.02240

US $78.98106

≥50:

US $84.02240

US $78.98106

≥100:

US $83.42224

US $78.41691

≥500:

US $82.82208

US $77.85276

From: US $82.82208
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