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Home > Elec-component > Modules > FET
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Ceramic(Large)
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FETs (Discrete) RD70HVF1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Stock:39230
Minimum:1
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SOT-89
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FETs (Discrete) RD70HVF1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Stock:66435
Minimum:4
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Part Number: IRFZ24N Description: N-Channel Power MOSFET Features: Low On-Resistance Fast Switching Low Threshold Avalanche Rated RoHS Compliant Applications: DC-DC Converters Motor Control Lo
Stock:79200
Minimum:13
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CERAMIC
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FETs (Discrete) RD70HVF1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
RD70HVF1 is a high-voltage MOSFET transistor manufactured by Mitsubishi. It is a N-channel enhancement mode vertical DMOS FET. It is designed for high voltage switching applications such as DC-DC conv
Stock:33951
Minimum:1
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CERAMIC
Mitsubishi
2017
Silicon RF Devices RF High Power MOS FETs (Discrete) RD70HVF1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Part Number: RD30HVF1 Description: RD30HVF1 is a 30A, 600V N-Channel MOSFET manufactured by Mitsubishi. Features: Low On-Resistance High Speed Switching Low Gate Charge RoHS Compliant Applications
Stock:40091
Minimum:1
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Part Number: UM100CDY-10 Description: The UM100CDY-10 is a DC-DC converter module manufactured by Mitsubishi. It is a single-output, isolated, non-regulated module with a wide input voltage range. F
Stock:33951
Minimum:1
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HPM
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FETs (Discrete) RD70HVF1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
RD35HUP2 is a three-phase AC motor manufactured by Mitsubishi. It is a high-performance motor with a rated output of 3.7 kW and a rated voltage of 200 V. It is designed for use in a wide range of appl
Stock:38780
Minimum:1
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SOT-23
Cj/长电
Silicon RF Devices RF High Power MOS FETs (Discrete) RD70HVF1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Stock:37950
Minimum:1
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TO-220
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FETs (Discrete) RD16HHF1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Stock:33951
Minimum:1
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Part Number: RD01MUS2-T513 Manufacturer: Mitsubishi Description: RD01MUS2-T513 is a low-power, low-noise, high-gain, dual-channel operational amplifier from Mitsubishi. Features: ? Low power consumpt
Stock:33936
Minimum:2
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TO-220
Mitsubishi
2018
Silicon RF Devices RF High Power MOS FETs (Discrete) RD70HVF1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Description: RD06HVF1-501 is a N-channel power MOSFET manufactured by Mitsubishi. Features: Drain-Source Voltage: 60V Drain Current: 6A RDS(on): 0.065Ω Gate-Source Voltage: ±20V Operating Temper
Stock:40720
Minimum:1
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TO-220
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FETs (Discrete) RD16HHF1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Stock:33951
Minimum:1
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The Mitsubishi UM75CDY-10 is a module designed for use in industrial automation systems. It is a compact, high-performance module that provides a wide range of features and functions for controlling a
Stock:33887
Minimum:1
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Stock:33951
Minimum:1
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Mitsubishi UM150CDY-10 is a module that is used for controlling the speed of a motor. It is a DC brushless motor speed control module with a rated voltage of 150V and a rated current of 10A. It has a
Stock:33831
Minimum:1
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company
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