SOT23 CM

S3 SOT-23

TS2 SOT-323

TS1 SOT-323

SOT323 XJ

KD SOT-723

Silicon RF Devices RF High Power MOS FETs (Discrete) RD16HHF1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment

Silicon RF Devices RF High Power MOS FETs (Discrete) RD16HHF1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment

Silicon RF Devices RF High Power MOS FETs (Discrete) RD70HVF1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment

Silicon RF Devices RF High Power MOS FETs (Discrete) RD100HHF1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment

UM1500 SERIES, 15 to 20 Watt DC-DC Converters

Silicon RF Devices RF High Power MOS FETs (Discrete) RD01MUS2 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment

Silicon RF Devices RF High Power MOS FETs (Discrete) RD06HVF1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment

Silicon RF Devices RF High Power MOS FETs (Discrete) RD35HUP2 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment

Silicon RF Devices RF High Power MOS FETs (Discrete) RD30HVF1 RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment

Silicon RF Devices RF High Power MOS FETs (Discrete) RD100HHF1 Parameter Level Value Unit Supply situation Discontinued Drain Voltage Typ 12.5 V Freqency 30 MHz Output Power (Min) 100 W Package Ceramic(Large) Input Power (Typ) 7000 W Drain Efficiency (Min) 55 % Feature - RoHS Directive Compliant with RoHS （2011/65/EU、(EU) 2015/863） Remarks RoHS : Restriction of the use of c

Silicon RF Devices RF High Power MOS FETs (Discrete) RD70HUF2 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment