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Home > Elec-component > Modules > RF Modules
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H2M
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FET Modules RA80H1415M1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Stock:33951
Minimum:1
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Stock:33951
Minimum:1
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SANYO) Description: The STK433-330 (HYB, SANYO) is a hybrid IC (Integrated Circuit) containing an amplifier and power supply circuit. It is designed for use in audio power amplifiers. Features: Hi
Stock:33932
Minimum:1
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TO-270
Mitsubishi
18+
RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica -tions
Stock:5000
Minimum:100
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Stock:304
Minimum:1
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H2M
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FET Modules RA60H4452M1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Stock:33951
Minimum:1
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RD01MUS1 is a surface-mountable, low-power, low-noise, high-speed, low-voltage differential signal (LVDS) driver IC manufactured by Mitsubishi. It is designed for use in LCD displays, such as those fo
Stock:33921
Minimum:2
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Stock:3080
Minimum:1
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Stock:33951
Minimum:1
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Stock:10000
Minimum:1
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Stock:33946
Minimum:1
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Stock:48
Minimum:1
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H2M
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FET Modules RA80H1415M1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Description: The RA60H1317M1A-201 is a power amplifier module from Mitsubishi. It is a high-power amplifier module with a rated output power of 60W. Features: High output power of 60W High effi
Stock:39013
Minimum:1
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H46S
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FET Modules RA07H4047M Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
RA07H4047M is a power transistor manufactured by Mitsubishi. It is a NPN type transistor with a maximum collector current of 7A and a maximum collector-emitter voltage of 400V. It is used in power amp
Stock:33951
Minimum:1
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Minimum:1
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Stock:9998
Minimum:1
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Description: The MW7IC2725NB is a high-voltage, high-speed, N-channel MOSFET from Freescale Semiconductor. Features: - Low on-resistance - High-speed switching - High-voltage rating - Low gate charge
Stock:33950
Minimum:1
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SMD
Mitsubishi
16+
The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to 870-MHz range
Stock:33950
Minimum:1
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TO-220S
Mitsubishi
16+
RF POWER TRANSISTOR FOR VHF RF POWER AMPLIFIERS APPLICATIONS
Stock:10000
Minimum:1
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company
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