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Description
100A Igbt Module For High Power Switching Use
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1. Description
Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three
phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All
components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and
thermal management.
2. Features
> Low Drive Power
> Low VCE(sat)
> Discrete Super-Fast Recovery Free-Wheel Diode
> High Frequency Operation
> Isolated Baseplate for Easy Heat Sinking
> AC Motor Control
> Motion/Servo Control
> UPS
> Welding Power Supplies
Preview of the first 3 pages of the data sheet
Some Part number from the same manufacture
Some Part number from the same manufacture Mitsubishi Electronics Inc. |
CM100TU-24H 100 Amp Igbt Module For High Power Switching Use Insulated Type |
CM10AD00-24H |
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CM10MD1-24H |
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CM1200HA-34H High Power Switching Use Insulated Type |
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CM1200HB-50H 2nd-version Hvigbt (high Voltage Insulated Gate Bipolar Transistor) Modules |
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CM150DU-12H 150 Amp Igbt Module For High Power Switching Use Insolated Type |
CM150DU-24F 150A Igbt Module For High Power Switching Use |
CM150DU-24H 150 Amp Igbt Module For High Power Switching Use Insolated Type |
CM150DY-12H 150 Amp Igbt Module For High Power Switching Use Insulated Type |
CM150DY-24H |
CM150E3U-12F |
CM150E3U-12H 150 Amp Igbt Module For High Power Switching Use Insulated Type |
M38027E1-XXXSS : RAM Size: 1024bytes; Single-chip 8-bit CMOS Microcomputer M38196E1-XXXFS : RAM Size: 896bytes; Single-chip 8-bit CMOS Microcomputer M38220E9DFS : RAM Size: 192 Bytes; Single-chip 8-bit CMOS Microcomputer M38223M4M-121HP : Single-chip 8-bit CMOS Microcomputer M38256E3DHP : RAM Size: 896 Bytes; Single-chip 8-bit CMOS Microcomputer M38507M9-XXXSP : RAM Size:1024 Bytes; Single-chip 8-bit Microcomputer M38508FCH-XXXSS : RAM Size:1536 Bytes; Single-chip 8-bit CMOS Microcomputer M38863F1AGP : RAM Size: 512bytes; Single-chip 8-bit CMOS Microcomputer M52758AP : Wide Band Analog Switch M5M51008BKV-70VLL-I : 1048576-bit(131072-word BY 8-bit)cmos SRAM MF0030M-03AT : Null8/16-bit Data Bus Flash Ata PC Card RA13H8891MB-101 : RoHS Compliance , 880-915mhz 13W 12.5v, 3 Stage Amp. For Mobile Radio |
Same catergory
Same catergory |
2SK1469 : N-channel MOS Silicon Fet, Very High-speed Switching Application. Any and all SANYO products described or contained herein do not have s that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative. PBSS4130T : 30 V; 1 a NPN Low V_cesat (BISS) Transistornpn Biss Transistor in a SOT23 Plastic Package Providing Ultra Low Vcesat And Rcesat Parameters. PNP Complement: PBSS5130T. Low Collector-emitter Saturation Voltage Vcesat High Collector Current Capability ic And Icm High Efficiency Leading to Less Heat Generation Reduced Printed-circuit Board Requirements. TM400DZ-2H : Style = Phase Control ;; Type = SCR Module ;; Voltage = 1600V ;; Current = 400A ;; Circuit Configuration = Dual SCR. TN6727A : Amplifier. PNP General Purpose Amplifier. This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1A. Sourced from Process 77. See TN6726A for characteristics. Symbol VCES VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous *These ratings are limiting values. 03028BX391BJZC : CAPACITOR, CERAMIC, MULTILAYER, 100 V, BX, 0.00039 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 3.90E-4 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 100 volts ; Mounting Style: Surface Mount Technology. 0505 : CAPACITOR, CERAMIC, MULTILAYER, 50 - 300 V, SURFACE MOUNT,. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Mounting Style: Surface Mount Technology ; Operating Temperature: -55 to 125 C (-67 to 257 F). DEJE3E2102ZC3B : CAPACITOR, CERAMIC, E, 0.001 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 1.00E-3 microF ; Capacitance Tolerance: 80 (+/- %) ; Mounting Style: Through Hole ; Operating Temperature: -25 to 85 C (-13 to 185 F). LS4678 : 1.8 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE. s: Diode Type: VOLTAGE REGULATOR DIODE. P270-DF11AR100K : RESISTOR, POTENTIOMETER, CONDUCTIVE PLASTIC, 1 TURN(S), 1 W, 100000 ohm. s: Potentiometer Type: Standard Potentiometer ; Resistance Taper: Linear ; Mounting / Packaging: Panel Mount (Bushing), ROHS COMPLIANT ; Resistance Range: 100000 ohms ; Tolerance: 10 +/- % ; Operating Temperature: -55 to 120 C (-67 to 248 F) ; Standards and Certifications: RoHS. RN47A4JE : 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: Complementary ; Package Type: 2-2P1E, Extreme SuperMini, ESV, 5 PIN. SMF512KJT : RESISTOR, METAL FILM, 5 W, 5 %, 100 ppm, 12000 ohm, SURFACE MOUNT. s: Category / Application: General Use ; Technology / Construction: MetalFilm ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), CHIP, ROHS COMPLIANT ; Resistance Range: 12000 ohms ; Tolerance: 5 +/- % ; Temperature Coefficient: 100 ±ppm/°C ; Power Rating: 5 watts (0.0067. UPA808T-T1KB : 2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR. s: Polarity: NPN ; Package Type: PLASTIC, SUPERMINI-6 ; Number of units in IC: 2 ; Operating Frequency: 11000 MHz. VFT1045BP-M3/4W : 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC. s: Rectifier Configuration / Technology: Schottky ; Package: HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, ITO-220AC, 2 PIN ; Number of Diodes: 1 ; VRRM: 45 volts ; IF: 10000 mA. Z0110DA1AA2 : 400 V, 0.8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-92. s: Thyristor Type: Triac, 4 QUADRANT LOGIC LEVEL TRIAC ; Pin Count: 3 ; VDRM: 400 volts ; IT(RMS): 0.8000 amps. 20J13K : RESISTOR, WIRE WOUND, 10 W, 5 %, 30 ppm, 13000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED ; Resistance Range: 13000 ohms ; Tolerance: 5 +/- % ; Temperature Coefficient: 30 ±ppm/°C ; Power Rating: 10 watts (0.0134 HP) ; Operating. |
10000 buyer reviews from United States
Rachel Gray
Length of registration:7 years
The testing result for the Intergrated Circuits CM100TU-24F ordered from Utsource website1 1. The circuit was tested for electrical performance and all parameters were within the specified limits. 2. The circuit was tested for thermal performance and the temperature rise was within the specified limits. 3. The circuit was tested for mechanical performance and the results were satisfactory. 4.
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03/17/2023
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CM100TU-24F
CM100TU-24F has several brands around the world that may have alternate names for CM100TU-24F due to regional differences or acquisition. CM100TU-24F may also be known as the following names:
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