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Inicio > Componentes Electrónicos > Chips IC > Memoria flash
Utsource
TSOP-48
AMD
00+
Flash Memory IC; Memory Configuration:1M x 16 / 2M x 8; Supply Voltage:3V; Package/Case:48-TSOP; Leaded Process Compatible:No; Peak Reflow Compatible 260 C:No; Supply Voltage Max:3.6V; Access Time, Tacc:120ns RoHS Compliant: No
Depósito:10000
Mínimo:2
Favorita
SOP32
Samsung
03+
Description = K6X4008C1F 512K X 8 Bit Low Power Full CMOS Static RAM ;; Organization = 512Kx8 ;; Vcc(V) = 4.5~5.5 ;; Speed-tAA(ns) = 55,70 ;; Operating Temperature = I,a ;; Operating Current(mA) = 40 ;; Standby Current(uA) = 20,30 ;; Package = 32SOP,32TSOP2,32TSOPR ;; Production Status = Mass Product ;; Comments = Product
Description: 8Mbit (1M x 8bit) CMOS Static RAM Features: Low power consumption Single power supply operation Fast access time High speed CMOS process Low standby current TTL compatible in
Depósito:5000
Mínimo:1
Favorita
Depósito:1520
Mínimo:10
Favorita
MT48LC8M16A2-75 is a 16Mb (2M x 8/1M x 16) Synchronous DRAM, organized as 2M words by 8 bits or 1M words by 16 bits. It is a low-power, high-speed CMOS double data rate (DDR) synchronous DRAM, designe
Depósito:10000
Mínimo:2
Favorita
Depósito:5000
Mínimo:1
Favorita
QFP208
Atmel
16+
Flash Memory IC; Memory Configuration:1M x 16 / 2M x 8; Supply Voltage:3V; Package/Case:48-TSOP; Leaded Process Compatible:No; Peak Reflow Compatible 260 C:No; Supply Voltage Max:3.6V; Access Time, Tacc:120ns RoHS Compliant: No
Description: The AT91SAM9260B-QU is a microcontroller designed by Atmel Corporation. It is based on the ARM926EJ-S core and features a wide range of peripherals and memory options. Features: * ARM926
Depósito:2000
Mínimo:1
Favorita
Description: The K9F5608U0D-PCB0 is a 512Mb (64M x 8-bit) NAND Flash memory device manufactured by Samsung. Features: * Operating Voltage: 1.8V * Fast Program Time: 1.5μs (Typ.) * Fast Read Access Ti
Depósito:10000
Mínimo:1
Favorita
Description: The MT48LC2M32B2P-6 is a 32Mb (4M x 8-bit) Synchronous DRAM memory module from Micron Technology. It is organized as 4M words by 8-bits and is fabricated using Micron’s high-performance
Depósito:10000
Mínimo:1
Favorita
Depósito:16000
Mínimo:10
Favorita
Depósito:20
Mínimo:10
Favorita
Depósito:2000
Mínimo:1
Favorita
Depósito:30
Mínimo:10
Favorita
Depósito:5000
Mínimo:1
Favorita
Depósito:5000
Mínimo:1
Favorita
Depósito:10000
Mínimo:1
Favorita
Description: The MT48LC16M4A2P-75 is a 16Mbit (2M x 8) Synchronous DRAM module from Micron. It is a 54-pin TSOP package and is a low-power, high-speed CMOS synchronous DRAM. Features: 2M x 8 organiz
Depósito:10000
Mínimo:1
Favorita
SOP8
Atmel
16+
Flash Memory IC; Memory Configuration:1M x 16 / 2M x 8; Supply Voltage:3V; Package/Case:48-TSOP; Leaded Process Compatible:No; Peak Reflow Compatible 260 C:No; Supply Voltage Max:3.6V; Access Time, Tacc:120ns RoHS Compliant: No
Depósito:10000
Mínimo:1
Favorita
SOP32
Samsung
06+
Circular Connector; Body Material:Composite; Series:RADSOK; No. of Contacts:5; Connecting Termination:Wire; Circular Shell Style:Cable Receptacle; Gender:Receptacle; Wire Size AWG:6-4 RoHS Compliant: Yes
Description: 8Mbit (1M x 8bit / 512K x 16bit) CMOS Static RAM Features: - Low power consumption - Fast access time - High speed operation - Low voltage operation - High noise immunity - Low pow
Depósito:5000
Mínimo:1
Favorita
Description: K9F5608UOB-YCBO is a 64M x 8-bit NAND Flash Memory with SpiBus Interface from Samsung. Features: * 64M x 8-bit NAND Flash Memory * SpiBus Interface * 3.3V Power Supply * TSSOP-48 Package
Depósito:10000
Mínimo:1
Favorita
Detener a los expertos en producción, podemos proporcionar una gran cantidad de componentes electrónicos que se han detenido y que son difíciles de encontrar para facilitar la empresa de mantenimiento.
Depósito
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