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MG10G6EL2

MODULE

Others

Power and Industrial Semiconductors Data Book

Utsource

≥1:

€13.95262

€13.11546

≥5:

€13.17747

€12.38682

≥10:

€12.78990

€12.02250

≥20:

€12.40233

€11.65819

≥50:

€12.01475

€11.29387

≥100:

€11.85972

€11.14814

≥200:

€11.62718

€10.92955

≥500:

€11.47215

€10.78382

≥1000:

€11.23961

€10.56523

From: €11.23961

Description: The MG10G6EL2 is a 10GBASE-ER/EW SFP+ transceiver module from Mellanox. It is designed for use with 10 Gigabit Ethernet links up to 40km in length. Features: Supports 10 Gigabit Ethern

Depósito:2000

Mínimo:1

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MG150J2YS1

MODULE

Others

Catalog Scans - Shortform Datasheet

Utsource

≥1:

€31.00582

€29.14547

≥2:

€31.00582

€29.14547

≥5:

€29.97229

€28.17395

≥10:

€29.55888

€27.78534

≥20:

€29.35217

€27.59104

≥30:

€28.93876

€27.20244

≥50:

€28.93876

€27.20244

≥100:

€28.73206

€27.00813

≥500:

€28.52535

€26.81383

From: €28.52535

MG150J2YS1 is a module manufactured by Mitsubishi Electric. It is a 150A IGBT module with a voltage rating of 1200V. It is designed for use in motor control, renewable energy, welding, and other indus

Depósito:2000

Mínimo:1

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SQD300AA100

MODULE

450

TRANSISTOR MODULE

Utsource

≥1:

€50.38445

€47.36138

≥2:

€50.38445

€47.36138

≥5:

€48.70497

€45.78267

≥10:

€48.03318

€45.15119

≥20:

€47.69728

€44.83544

≥30:

€47.02549

€44.20396

≥50:

€47.02549

€44.20396

≥100:

€46.68959

€43.88822

≥500:

€46.35370

€43.57247

From: €46.35370

Depósito:2000

Mínimo:1

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BSM15GD120DN12

MODULE

IGBT Modules up to 600V PIM

Utsource

≥1:

€53.43694

€50.23072

≥2:

€53.43694

€50.23072

≥5:

€51.65571

€48.55637

≥10:

€50.94322

€47.88662

≥20:

€50.58697

€47.55175

≥30:

€49.87448

€46.88201

≥50:

€49.87448

€46.88201

≥100:

€49.51823

€46.54714

≥500:

€49.16199

€46.21227

From: €49.16199

Description: BSM15GD120DN12 is an IGBT module manufactured by Infineon Technologies. It is a 1200V, 15A, dual N-channel IGBT module. Features: 1200V blocking voltage 15A continuous current

Depósito:2000

Mínimo:1

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Used and refurbished parts guaranteed can work well

FRS200BA60

MODULE

Sanrex

DIODE MODULE FRD

Utsource

≥1:

€27.13009

€25.50228

≥2:

€27.13009

€25.50228

≥5:

€26.22575

€24.65221

≥10:

€25.86402

€24.31218

≥20:

€25.68315

€24.14216

≥30:

€25.32142

€23.80213

≥50:

€25.32142

€23.80213

≥100:

€25.14055

€23.63212

≥500:

€24.95968

€23.46210

From: €24.95968

Description: The FRS200BA60 is a silicon controlled rectifier (SCR) module manufactured by Sanrex. It is designed for use in high power switching applications. Features: High surge current capabi

Depósito:2000

Mínimo:1

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6MBI15S-120

MODULE

Fuji Electric

IGBT MODULE S series1200V / 15A

Utsource

≥1:

€48.71534

€45.79242

≥2:

€48.71534

€45.79242

≥5:

€47.09150

€44.26601

≥10:

€46.44196

€43.65544

≥20:

€46.11719

€43.35016

≥30:

€45.46765

€42.73959

≥50:

€45.46765

€42.73959

≥100:

€45.14288

€42.43431

≥500:

€44.81812

€42.12903

From: €44.81812

6MBI15S-120 is a module manufactured by Fuji Electric. It is a 600V, 15A, IGBT module. It is designed to be used in motor control, UPS, welding, and other industrial applications. It features low powe

Depósito:2000

Mínimo:1

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AD400AA80

MODULE

Sanrex

Utsource

≥1:

€78.82720

€74.09756

≥2:

€78.82720

€74.09756

≥5:

€73.57205

€69.15773

≥10:

€73.57205

€69.15773

≥20:

€73.57205

€69.15773

≥30:

€73.57205

€69.15773

≥50:

€73.57205

€69.15773

≥100:

€73.04654

€68.66374

≥500:

€72.52102

€68.16976

From: €72.52102

Description: SANREX Module Features: High voltage and high current capability Low inductance Low noise High frequency operation High reliability Low EMI High surge capability Low on-state resi

Depósito:2000

Mínimo:1

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PGD200S16

MODULE

Niec

Utsource

€99.01492

€93.07403

From: €99.01492

Description: This is a 200A, 1600V, 3-phase diode module from NIEC. Features: High surge current capability Low forward voltage drop Low reverse current leakage High temperature operation High re

Depósito:2000

Mínimo:1

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IRKH91/12

MODULE

International Rectifier

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

Utsource

≥1:

€27.13009

€25.50228

≥2:

€27.13009

€25.50228

≥5:

€26.22575

€24.65221

≥10:

€25.86402

€24.31218

≥20:

€25.68315

€24.14216

≥30:

€25.32142

€23.80213

≥50:

€25.32142

€23.80213

≥100:

€25.14055

€23.63212

≥500:

€24.95968

€23.46210

From: €24.95968

Depósito:2000

Mínimo:1

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PD608

MODULE

Niec

DIODE MODULE 60A/800V

Utsource

≥1:

€11.19529

€10.52357

≥5:

€10.63552

€9.99739

≥10:

€10.07576

€9.47121

≥20:

€9.79588

€9.20812

≥50:

€9.51599

€8.94503

≥100:

€9.23611

€8.68195

≥200:

€8.95623

€8.41886

≥500:

€8.84428

€8.31362

≥1000:

€8.67635

€8.15577

From: €8.67635

Description: NIEC Module Features: Compact size High reliability Low power consumption High speed switching Low noise Easy to install Long life High temperature resistance Appl

Depósito:5000

Mínimo:1

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2MBI200L-060

MODULE

Fuji Electric

IGBT MODULEL series

Utsource

≥1:

€26.07487

€24.51038

≥2:

€26.07487

€24.51038

≥5:

€25.20571

€23.69337

≥10:

€24.85805

€23.36656

≥20:

€24.68421

€23.20316

≥30:

€24.33655

€22.87636

≥50:

€24.33655

€22.87636

≥100:

€24.16272

€22.71295

≥500:

€23.98888

€22.54955

From: €23.98888

2MBI200L-060 is a module manufactured by Fuji Electric. It is a 200A, 600V insulated type IGBT module. It is designed for use in power conversion applications such as motor control, UPS, welding, and

Depósito:2000

Mínimo:1

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1MBI600S-120

MODULE

Fuji Electric

1GBT MODULE

Utsource

≥1:

€67.87897

€63.80623

≥2:

€67.87897

€63.80623

≥5:

€63.35371

€59.55249

≥10:

€63.35371

€59.55249

≥20:

€63.35371

€59.55249

≥30:

€63.35371

€59.55249

≥50:

€63.35371

€59.55249

≥100:

€62.90118

€59.12711

≥500:

€62.44866

€58.70174

From: €62.44866

1MBI600S-120 is a module manufactured by Fuji Electric. It is an IGBT module with a maximum collector emitter voltage of 600V and a maximum collector current of 120A. It is designed for use in motor c

Depósito:2000

Mínimo:1

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BSM100GB60DL

MODULE

Eupec

IGBT-Modules

Utsource

≥1:

€44.57086

€41.89661

≥2:

€44.57086

€41.89661

≥5:

€43.08517

€40.50006

≥10:

€42.49089

€39.94143

≥20:

€42.19375

€39.66212

≥30:

€41.59947

€39.10350

≥50:

€41.59947

€39.10350

≥100:

€41.30233

€38.82419

≥500:

€41.00519

€38.54488

From: €41.00519

Depósito:2000

Mínimo:1

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SKM100GAR123D

MODULE

Semikron

SEMITRANS IGBT Modules New Range

Utsource

≥1:

€44.57086

€41.89661

≥2:

€44.57086

€41.89661

≥5:

€43.08517

€40.50006

≥10:

€42.49089

€39.94143

≥20:

€42.19375

€39.66212

≥30:

€41.59947

€39.10350

≥50:

€41.59947

€39.10350

≥100:

€41.30233

€38.82419

≥500:

€41.00519

€38.54488

From: €41.00519

Depósito:2000

Mínimo:1

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CVM100BB160

MODULE

Sanrex

Utsource

≥1:

€38.75727

€36.43183

≥2:

€38.75727

€36.43183

≥5:

€37.46536

€35.21744

≥10:

€36.94860

€34.73168

≥20:

€36.69022

€34.48880

≥30:

€36.17345

€34.00305

≥50:

€36.17345

€34.00305

≥100:

€35.91507

€33.76017

≥500:

€35.65669

€33.51729

From: €35.65669

Description: The CVM100BB160 is a 1600V, 100A, three-phase bridge rectifier module from SanRex. It is designed for use in AC to DC power conversion applications. Features: 1600V, 100A, three-phase

Depósito:2000

Mínimo:1

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SKKH106/08D

MODULE

Semikron

THYRISTOR/DIODE MODULE, 106A 1200VTHYRISTOR/DIODE MODULE, 106A 1200V; Voltage, Vrrm:1200V; Current, It av:106A; Case style:SEMIPACK 1; Current, It rms:180A; Current, Itsm:2250A; Voltage, Vgt:3.0V; Current, Igt:150mA; Centres,

Utsource

≥1:

€20.07004

€18.86584

≥5:

€18.95504

€17.81774

≥10:

€18.39754

€17.29369

≥20:

€17.84004

€16.76964

≥50:

€17.28254

€16.24558

≥100:

€17.05954

€16.03596

≥200:

€16.72504

€15.72153

≥500:

€16.50204

€15.51191

≥1000:

€16.16753

€15.19748

From: €16.16753

SKKH106/08D is a three-phase bridge rectifier module manufactured by Semikron. It has a maximum current rating of 106A and a maximum voltage rating of 800V. It is designed for use in AC/DC converters,

Depósito:2000

Mínimo:1

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BSM300GB60DLC

MODULE

Eupec

High Efficient Rectifier Diodes

Utsource

≥1:

€77.51454

€72.86367

≥2:

€77.51454

€72.86367

≥5:

€72.34691

€68.00609

≥10:

€72.34691

€68.00609

≥20:

€72.34691

€68.00609

≥30:

€72.34691

€68.00609

≥50:

€72.34691

€68.00609

≥100:

€71.83014

€67.52033

≥500:

€71.31338

€67.03457

From: €71.31338

BSM300GB60DLC is a module manufactured by EUPEC. It is an insulated gate bipolar transistor (IGBT) module with a voltage rating of 600V and a current rating of 300A. The module features a high power

Depósito:2000

Mínimo:1

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BSM30GD60DLC

MODULE

Eupec

High Efficient Rectifier Diodes

Utsource

≥1:

€35.03431

€32.93225

≥2:

€35.03431

€32.93225

≥5:

€33.86650

€31.83451

≥10:

€33.39938

€31.39541

≥20:

€33.16581

€31.17586

≥30:

€32.69869

€30.73677

≥50:

€32.69869

€30.73677

≥100:

€32.46513

€30.51722

≥500:

€32.23156

€30.29767

From: €32.23156

The BSM30GD60DLC is an insulated-gate bipolar transistor (IGBT) module manufactured by EUPEC. It is a 600V, 30A device with a maximum junction temperature of 150°C. It has a low on-state voltage drop

Depósito:2000

Mínimo:1

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DDB6U84N16RR

MODULE

Eupec

Diode Bridges with BC; Package: AG-ECONO2-1; VDRM/ VRRM V: 1,600.0 V; IFSM max: 550.0 A; Configuration: 3 phase bridge rectifier uncontrolled with brake chopper ; Housing: EconoBRIDGE? ;

Utsource

≥1:

€76.04488

€71.48218

≥2:

€76.04488

€71.48218

≥5:

€70.97522

€66.71671

≥10:

€70.97522

€66.71671

≥20:

€70.97522

€66.71671

≥30:

€70.97522

€66.71671

≥50:

€70.97522

€66.71671

≥100:

€70.46825

€66.24016

≥500:

€69.96129

€65.76361

From: €69.96129

DDB6U84N16RR is an IGBT eupec power module made by Infineon Technologies. It is a double-sided cooled, 16-pack IGBT module with a 1200V blocking voltage and an 800A/1200A current carrying capability.

Depósito:2000

Mínimo:1

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MG50Q6ES1

MODULE

Others

Catalog Scans - Shortform Datasheet

Utsource

≥1:

€77.51454

€72.86367

≥2:

€77.51454

€72.86367

≥5:

€72.34691

€68.00609

≥10:

€72.34691

€68.00609

≥20:

€72.34691

€68.00609

≥30:

€72.34691

€68.00609

≥50:

€72.34691

€68.00609

≥100:

€71.83014

€67.52033

≥500:

€71.31338

€67.03457

From: €71.31338

Description: The MG50Q6ES1 is a high-performance, high-efficiency, insulated-gate bipolar transistor (IGBT) module with a built-in anti-parallel diode. Features: High voltage: 600V Low on-state res

Depósito:2000

Mínimo:1

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