Images of Electronic Components丨Utsource

UC3708N

FEATURES● 3.0A Peak Current Totem PoleOutput● 5 to 35V operation● 25ns Rise and Fall Times● 25ns Propagation Delays● Thermal Shutdown and Under-Voltage Protection● High-Speed, Power MOSFETCompatible● Efficient High Frequency Operation● Low Cross-Conduction CurrentSpike● Enable and Shutdown Functions● Wide Input Voltage Range● ESDProtection to 2kVDESCRIPTIONThe UC1708 family of power drivers is made with a high-speed,high-voltage, Schottky process to interface control functions and high-powerswitching devices - particularly power MOSFETs.Operating over a 5 to 35volt supply range,these devices contain two independent channels.The Aand B inputs are compatible with TTL and CMOSlogic families,but canwithstand input voltages as high as VIN.Each output can source or sink upto 3A as long as power dissipation limits are not exceeded.Although each output can be activated independently with its own inputs,they can be forced low in common through the action of either a digital highsignal at the Shutdown terminal or by forcing the Enable terminal low.TheShutdown terminal will only force the outputs low, it will not effect the behavior of the rest of the device.The Enable terminal effectively places the devicein under-voltage lockout, reducing power consumption by as much as 90%.During under-voltage and disable (Enable terminal forced low) conditions,the outputs are held in a self-biasing,low-voltage, state.The UC3708 and UC2708 are available in plastic 8-pin MINI DIP and 16-pin“bat-wing DIP packages for commercial operation over a 0℃to +70℃temperature range and industrial temperature range of -25℃to +85℃respectively. For operation over a -55℃to +125℃temperature range,theUC1708 is available in hermetically sealed 8-pin MINICDIP,16 pin CDIPand 20 pin CLCC packages.Surface mount devices are also available.

BUY

BUK102-50GS

DESCRIPTIONMonolithic temperature andoverload protected power MOSFETin a 3 pin plastic envelope, intendedas a general purpose switch forautomotive systems and otherapplications.APPLICATIONSGeneral controller for driving● lamps● motors● solenoids● HeatersFEATURES● Vertical power DMOS outputstage● Low on-state resistanceoverload protection againstover temperature● Overload protection againstshort circuit load● Latched overload protectionreset by input● 10 V input level● Low threshold voltagealso allows 5V control● Control of power MOSFETand supply of overloadprotection circuitsderived from input● ESD protection on input pin● Overvoltage clamping for turnoff of inductive loads

BUY

TK8A60DA

● Low drain-source ON resistance:RDS(ON)= 0.8Ω(typ.)● High forward transfer admittance: |Yfsl = 4.0S(typ.)● Low leakage current: IDSS= 10 μA(max)(VDS = 600V● Enhancement-mode: Vth=2.0 to 4.0V (VDS= 10 V, ID= 1 mA)

BUY

PA2008

PA2008 Integrated Circuit Chip is a SMT gate drive basic operational insulation driver. It comes variety of ON resistances with IGBT and MOSFET specifications during turning switching it results in the fast operation and there by reducing the switching loss. Shows minimum conduction losses and dissipation at constant rate of voltage optimization. The miniature rotary switches are also electronic insulated with the rated capacity. The insulation protective characteristics shows the resistant and high material strength. The mechanical schematic of the operational insulation for insulated terminal crimpers. The MOSFET (Metal Oxide Field Effect Transistor) shows good thermal and electrical specifications of the IC integrated circuit. Gate drive and voltage driver potential electronic devices are featured and specified for the optimum and operational function. PA2008 Schematic Diagram:The high frequencies and clearance operational values of the integrated circuit is highly optimum and characterised for the open and short circuit specifications. It shows the higher voltage capacity and current carrying capability. The basic insulation of the IC is 1.4mm with creepage clearance and operational value features. The operating frequency is 50KHz and varies with the optimum junction and variable temperature conditions. The open circuit and short circuit protection loss by the circuit is also minimised with the IC. Key Features of PA2008:1.Fast switching characteristics with minimum loss 2.The maximum junction temperature is 175 degree Celsius3.Minimum operating temperature range -40 degree Celsius to 175 degree Celsius 4.Short circuit protection security 5.Highly efficient and maximum rating ambient temperature.6.DC blocking voltage 650V 7.High input impedance 17 M OhmsApplications of PA2008: As shown in the figure below PA2008 integrated circuit is used for the inverter inducting and many other engineering applications. Apart from this it also shows variable power application in the electronics PA2008 Inverter application1.Bidirectional converters and inverter applications 2.Power conditioners 3.Motor driver inverters and wide range of electronic power amplification 4.High operating frequency response applications5.Break before switching applications etc.

BUY

581B452A

Introduction:The 581B452A is a Power supply module. Which is used to convert AC power into usable DC power so that any electronic system can be powered and operated properly. Also the power supply of the 581B452Aconditions the DC output so that the DC voltage is free of noise or spikes.The 581B452Aprovide electrical protection in the form of fuses or circuit breakers, it can trigger an alarm in the case of abnormal operation and provide a means to connect the DC output through carefully chosen connectors. The electronic module is also there for safety reasons so that power grid high voltages are removed from inside an electronic system. The 581B452Apower supply module is used as a driver for IGBT modules. It has protection for when the supply is under voltage.Parameters:●The 581B452Apower supply module has a double driver for half bridge IGBT modules●CMOS compatible inputs●Presence of a Short circuit protection by VCE●Drive interlock top/bottom●Isolation by transformers●Supply under voltage protection●Error latch/outputApplications:Used as a driver for IGBT modules in half and full bridge circuits in:●Choppers●Inverter drives●UPS●Welding InvertersUsed to power appliances that require a bus voltage of up to 1.2KV

BUY

FR9886

DescriptionThe FR9886 is a synchronous step-down DC/DCconverter that provides wide 4.5V to 23V inputvoltage range and 2.5A continuous load currentcapability.The FR9886 fault protection includes cycle-by-cyclecurrent limit,UVLO, output overvoltage protectionand thermal shutdown.The adjustable soft-startfunction prevents inrush current at turn-on.Thisdevice uses current mode controlscheme whichprovides fast transientresponse.Internal compensationfunctionreducesexternal compensation components and simplifies the designprocess. In shutdown mode. the supply current isless than 1μA.The FR9886 is availab1e in a SOP-8/SOP-8 exposedpadpackage,andprovidesgoodthermal conductance.Features● High Efficiency up to 96%● Low Rds(on) Integrated Power MOSFET. Internal Compensation Function● Wide Input Voltage Range: 4.5V to 23 V● Adjustab1e Output Voltage from 0.925V to 20V● 2.5A Output Current● Fixed 340KHz Switching Frequency● Current Mode Operation● Adjustable Soft-Start● Cycle-by-Cycle Current Limit● Over-Temperature Protection with Auto Recovery● Output Overvoltage Protection● Under Voltage Lockout● 1μA Shutdown Current● SOP-8 and sOP-8 Exposed Pad PackagesApplications● STB (Set-Top-Box)● LCD Display, TV● Distributed Power System● Networking,XDSL Modem

BUY

CD4051BCN

General DescriptionThe CD4051BC, CD4052BC, and CD4053BC analog multiplexers/demultiplexers are digitallycontrolled analogswitches having low”ON”impedance and very lowOFF”leakage currents.Control of analog signals up to 15Vp-pcan be achieved by digital signal amplitudes of 3-15V.Forexample, if VDD= 5V, VSS= OV and VEE=-5V,analog signals from -5V to +5V can be controlled by digital inputs of0-5V.The multiplexer circuits dissipate extremely low quiescent power over the full VDD-VSSand VDD-VEEsupplyvoltage ranges, independent of the logic state of the controlsignals. When a logical“1”is present at the inhibit input terminal all channels are“OFF”.CD4051BC is a single 8-channel multiplexer having threebinary control inputs.A,B,and C, and an inhibit input.Thethree binary signals select 1of8 channels to be turned“ON”and connect the input to the output.CD4052BC is a differential 4-channel multiplexer havingtwo binary control inputs,A and B, and an inhibit input.Thetwo binary input signals select 1 or 4 pairs of channels tobe turned on and connect the differential analog inputs tothe differential outputs.CD4053BC is a triple 2-channel multiplexer having threeseparate digital control inputs, A, B, and C, and an inhibitinput. Each control input selects one of a pair of channelswhich are connected in a single-pole double-throw configuration.Features● Wide range of digital and analog signal levels:digital 3 -15V, analog to 15Vp-p● Low“ON resistance: 80Ω(typ.) over entire 15Vp-psignal-input range for VDD-VEE=15V● High“OFF”resistance:channel leakage of ±10 pA (typ.) at VDD-VEE= 10V● Logic level conversion for digital addressing signals of3-15V (VDD- VSS= 3 -15V) to switch analog signalsto 15 Vp-p(VDD- VEE=15V)● Matched switch characteristics:ΔRON= 5Ω(typ.) for VDD-VEE= 15V● Very low quiescent power dissipation under alldigital-control input and supply conditions:1μw (typ.) at VDD-VSS= VDD-VEE= 10V● Binary address decoding on chip

BUY

HAT2215R

1.DescriptionHAT2215R, HAT2215RJSilicon N Channel Power MOS FETHigh Speed PowerSwitching1. PW ≤ 10 μs, duty cycle ≤ 1 %2. Value at Tch = 25°C, Rg ≥ 50Ω3. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10 s4. 2 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10 s2. FeaturesLow on-resistanceCapable of 4.5 V gate driveHigh density mounting

BUY

2N5461

FEATURES● High Input Impedance● Very Low Noise● High Gain: AV= 80@ 20 mA● Low Capacitance: 1.2 pF TypicalBENEFITS● Low Signal Loss/System Error● High System Sensitivity● High-Quality Low-Level SignalAmplificationAPPLICATIONS● Low-Current,Low-Voltage Amplifiers● High-Side Switching● Ultrahigh Input ImpedancePre-AmplifiersDESCRIPTIONThe 2N/SST5460 series are p-channel JFETs designed toprovide all-around performance in a wide range of amplifierand analog switch applications.The 2N series,TO-226AA (TO-92), and SST series,TO-236(SO1-23), plastic packages provide low cost options, and areavailable in tape-and-reel for automated assembly, (seePackaging Information).

BUY

KL5C80A16CF

Chapter 6 Hardware Specifications 6.1. Outline ... CPU KL5C80A16CF (7.3725 MHz) Memory SRAM HM628128LP-7 equivalent (Battery backup longer than 7 years)

BUY

LM318N

FEATURES● 15 MHz Small Signal Bandwidth● Ensured 50Vl/us Slew Rate● Maximum Bias Current of 250nA● Operates from Supplies of ± 5V to ± 20V● Internal Frequency Compensation● Input and output Overload Protected● Pin compatible with General Purpose OpAmpsDESCRIPTIONThe LM118series are precision high speedoperational amplifiers designed forapplicationsrequiring wide bandwidth and high slew rate. Theyfeature a factor of ten increase in speed over generalpurpose devices without sacrificing DC performance.The LM118 series has internal unity gain frequencycompensation. This considerably simplifiesitsapplicationsince no externalcomponentsarenecessary for operation.However,unlike mostinternally compensated amplifiers, external frequencycompensationmaybe addedfor optimumperformance. For inverting applications, feedforwardcompensation willboost the slew rate to over150V/μsandalmost double thebandwidth.Overcompensation can be used with the amplifier forgreater stability when maximum bandwidth is notneeded. Further, a single capacitor can be added toreduce the 0.1% settling time to under 1μs.The high speed and fast settling time of these opamps make them useful in A/D converters, oscillators,active filters,sample and hold circuits,or generalpurpose amplifiers.These devices are easy to applyandofferan order ofmagnitude better AC performance than industry standards such as theLM709.The LM218-N is identical to the LM118 except thatthe LM218-N has its performance specified over a-25℃to +85℃ temperaturerange. The LM318-N isspecified from 0℃to +70℃.

BUY

74HCU04AP

DescriptionThe TC74HCU04A is a high speed CMOS INVERTERfabricated with silicon gate C2MOStechnology.It achieves the high speed operation similar to equivalentLSTTL while maintaining the CMOS low power dissipation.Since the internal circit is composed of a single stage inverter,it can be used in analog applications such as crystal oscllators.All inputs are equipped with protection circuits against staticdischarge or transient excess voltageFeatures● High speed: tpd=4 ns (typ.) at VCC= 5 V● Low power dissipation: ICC=1μA(max) at Ta=25℃● High noise immunity: VNIH=VNIH=10% VCC(min)● Output drive capability: 10 LSTTL loads

BUY

STTH30R03CG

DescriptionThe TURBOSWITCH R is an ultra highperformance diode.This TURBOSWITCH family, which drasticallycuts losses in associated MOSFET when run athighdl F/dt, issuited for HFOFF-Line SMPS andDC/DC convertersFeatures● Designed for high frequency applications● Hyperfast recovery competes with GaAs devices● Allows size decrease of snubbers and heatsinks

BUY

FA5640N

DescriptionFA5640 series are a quasi-resonant type switching power supply control IC with excellent stand-by characteristics.Though it is a small package with 8 pins, it has a lot of functions and enables to decrease external parts. Thereforeit is possible to realize a small size and a high cost-performance power supply.Features● A quasi-resonant type switching power supply● A power supply with excellent standby characteristics● Low power consumption achieved by integrated startup circuit● Low current consumption, During operation: 0.85 mA● Control of number of bottom skips by on-off width detection● Burst operation function under light load

BUY

IRFB4227

DescriptionThis HEXFET PowerMOSFET is specifically designed for Sustain; Energy Recovery Pass switch applications inPlasma Display Panels. This MOSFET utilizes the latest processing techniques to achievelow on-resistance persilicon area and low EPULSE rating.Additionalfeaturesof this MOSFETare 175℃operating junction temperatureand high repetitive peak current capability. These features combine tomake this MOSFET a highly efficient,robust and reliable device for PDP driving applications.Features●Advanced Process Technology●Key Parameters Optimized for PDP Sustain●Energy Recovery and Pass Switch Applications●Low QG for Fast Response●Short Fall Rise Times for Fast SwitchingDIY cooler using IRFB4227 IR2110We are going to make a cooler and heater using semiconductor thermo electric modules otherwise known as Peltier modules. These Peltier modules have an interesting function. When the Peltier module is supplied with voltage one side of the Peltier module will cool down and other side will be heated. We can change the cooling and heating side by reversing polarity. Which means we can use the same side of the Peltier module as a heating element or a cooler. To control these modules we are going to use IRFB4227 channel MOSFET and the IR2110 MOSFET gate driver.What is IRFB4227IRFB4227 is a N channel power MOSFET which we can used to switch high powered DC loads. In our application we are going to use IRFB4227 as the switching transistor of the thermoelectric modules. In below image you can see the symbol of the IRFB4227 n channel MOSFET.Figure 1. – Symbol of the IRFB4227Pinout of IRFB4227:As same as most of the transistors IRFB4227 is also coming in a 3 pin package. You can see it’s physical appearance and the pinout shown in the below image.Figure 2. – Pinout and physical appearance of IRFB4227Let’s see more details the pins of IRFB4227 N channel power MOSFET. ●Pin 1 – G– Gate pin of the IRFB4227 MOSFET. This pin is used to control the IRFB4227. ●Pin 2 – D– Drain pin of the IRFB4227. In n channel Mosfets this pin is usually connected to the positive potential side of theintended connection. ●Pin 3 – S – Source pin. This is the pin where usually connected to the lower potential compared to the drain pin.Features ofIRFB4227:Lets discuss the main features of the IRFB4227 n channel power MOSFET ●High repetitive avalanche capabilities. ●Extremely short switching times in both rising and falling edges ●Maximum of 200V switching voltage

BUY