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Product video Product Picture
QM100DY-HK Transistor Module High Power Switching Use Insulated Type
  • QM100DY-HK
  • QM100DY-HK
  • QM100DY-HK
Sales:2
113521

5.0 out of 5 stars

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3 star 0.2%
4 star 0.4%
5 star 99.1%

Total products: 2398031

Total sales: 12711129

Average lead time: 0 Hour

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QM100DY-HK

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Description

Transistor Module High Power Switching Use Insulated Type

Title

Modules

  • ECAD Module
  • Manufacturer Part Number: QM100DY-HK
  • Brand: Mitsubishi
  • Package / Case: MODULE
  • Category: Discrete Semiconductor
  • Warranty: 100% Perfect Functions

All product names, trademarks, brands and logos used on this site are the property of their respective owners. The depiction, description or sale of products featuring these names, trademarks, brands and logos is for identification purposes only and is not intended to indicate any affiliation with or authorization by any rights holder.

ECAD Module

Product Attributes

  • MITSUBISHI QM100DY-HK is a 100A IGBT module. It is a three-phase inverter module with a built-in fast recovery diode. It is designed for use in motor control applications such as AC servo motors, AC induction motors, and brushless DC motors. The module features a high-speed switching capability, low power loss, and a wide operating temperature range. It is suitable for use in a variety of industrial applications, including machine tools, pumps, fans, and compressors. (For reference only)

Some Part number from the same manufacture

Some Part number from the same manufacture Mitsubishi Electronics Inc.
QM100HA-H
QM100HC-M 100A - Transistor Module For Medium Power Switching Use, Insulated Type
QM100HY-2H
QM100HY-H
QM100TX1-H
QM100TX1-HB
QM10HA-HB Transistor Module Medium Power Switching Use Insulated Type
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QM150DY-24BK
QM150DY-24K
QM150DY-2HBK
QM150DY-2HK
QM150DY-3H
QM150DY-HBK
QM150DY-HK
QM150HA-H
QM150HY-2H 150A - Transistor Module For Medium Power Switching Use, Insulated Type
QM150HY-H
QM15DX-24 Transistor Module Medium Power Switching Use Insulated Type
QM15DX-2H

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M5M4V4265CJ-7 :

RM20DA : Modules/Assembly Diodes Fast Recovery Diode Modules-high Speed Switching Use Insulated Type

M52775 : VIF, SIF, Video, Chroma, Deflection FOR NTSC

Same catergory

Same catergory

2SC4940 : . Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current DC Collector Current Peak Base Current DC Base Current Peak Total Transistor Dissipation Dielectric Strength Mounting Torque Symbol Tstg Tj VCBO VCEO VEBO BP PT Vdis TOR Electrical Characteristics (Tc=25) Item Symbol.

2SJ229 : . Low ON resistance. Ultrahigh-speed switching. Low-voltage drive. Its height onboard is 9.5mm. Meets radial taping. s Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10µs, duty cycle1% Conditions.

AM27PS19175B3A : 16,384-bit ( 2048 X 8 ) Bipolar Prom.

BAS16Q62702-A739 : Diode Switching Sot-23. Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Surge forward current, 1 µs Total power dissipation, 54 °C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS For detailed information see chapter Package Outlines. Package mounted on epoxy pcb mm/6.

KSH30C : Epitaxial. PNP Epitaxial Silicon Transistor. General Purpose Amplifier Low Speed Switching Applications Lead Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, I" Suffix) Electrically Similar to Popular TIP30 and TIP30C Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : KSH30C VCEO Collector-Emitter Voltage : KSH30C Emitter-Base.

PHB130N03T : PHB130N03T; Trenchmos (tm) Transistor Standard Level Fet. N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using 'trench' technology. The device very low on-state resistance and has integral zener diodes giving ESD protection It is intended for use in DC-DC converters and general purpose switching applications. SYMBOL VDS ID Ptot Tj RDS(ON).

NTD6416ANL : Power MOSFET 100V 19A 74 Mohm Single N-Channel DPAK Logic Level Power MOSFET 100V 19A 74 mohm Single N-Channel DPAK Logic Level.

IHM-22.2UH10% : 1 ELEMENT, 2.2 uH, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Lead Style: Radial, PRINTED WIRING PIN ; Application: General Purpose, High Current ; Inductance Range: 2.2 microH ; Rated DC Current: 15000 milliamps ; Operating Temperature: -55 to 75 C (-67 to 167 F).

PAP3 : RESISTOR, WIRE WOUND, 25 W, 5; 10; 20 %, 1000; 1500; 3000 ppm, 10 ohm - 400 ohm, CHASSIS MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: Bolt-on Chassis, ROHS COMPLIANT ; Operating Temperature: -30 to 125 C (-22 to 257 F).

PHP24N03LT127 : 24 A, 30 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0560 ohms ; Number of units in IC: 1.

RJH60A01RDPD-E0J2 : IGBT. s: Transistor Type / Technology: IGBT. Reverse conducting IGBT with monolithic diode Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) 1.9 V typ. (at 5 A, VGE = 25°C) Built-in fast recovery diode (trr 100 ns typ.) in one package Trench gate and thin wafer technology High speed switching 85 ns typ. (at VCC 300 V, VGE = 25°C, inductive load) R07DS0803EJ0200.

SQ4483EEY-T1-GE3 : 22000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0085 ohms ; Package Type: HALOGEN FREE AND ROHS COMPLIANT, SOP-8 ; Number of units in IC: 1.

TX1456 : TELECOM TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: Telecom ; Mounting: Chip Transformer ; Operating Temperature: -40 to 85 C (-40 to 185 F).

555-8068-271-J-00 : 1 ELEMENT, 270 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Lead Style: ONE SURFACE ; Application: General Purpose, Power Choke ; Inductance Range: 270 microH ; Rated DC Current: 570 milliamps ; Operating Temperature: -30 to 100 C (-22 to 212 F).

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