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Product video Product Picture
IRFB4227 PDP SWITCH
  • IRFB4227
  • IRFB4227
  • IRFB4227
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IRFB4227

USED

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Description

PDP SWITCH

Not found, similar datasheet recommended

  • ECAD Module
  • Package: TO-220
  • Brand: International Rectifier
  • Package / Case: TO220
  • Polarity: N
  • Ptot @ TA=25°C max: 190W
  • Qgd typ nominal: 23nC
  • RthJC max: 0.45K/W
  • VDS max: 200V
  • VGS max: 30V
  • Mounting: THT
  • Tj max: 175°C
  • Type: N
  • Product Group: TO-220
  • Additional Information: Electrical
  • X-Selling-Products-RFS: Yes
  • Budgetary Price €/1k nominal: 1.13
  • VGS(th) max: 5V
  • VGS(th) min: 3V
  • VGS(th) nominal: 4V
  • Technology: IR MOSFET?
  • Qualification: Standard
  • Language: SPICE
  • Product Category: RF Products
  • Program Memory (macro) nominal: 0kByte
  • Data Memory (macro) nominal: 0kByte
  • Polarity N OR N+N(macro): Yes
  • Type (macro): No
  • Polarity P+N(macro): No
  • Technology Silicon-PN (macro): No
  • Technology Silicon-Schottky (macro): No
  • Technology Silicon-Carbide-Schottky (macro): No
  • Technology Any (macro): No
  • Polarity N Depletion(macro): No
  • Polarity P(macro): No

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ECAD Module

Product Attributes

  • Package:TO220 Manufacturer: IR Description: IRFB4227 is a P-channel MOSFET with a maximum drain-source voltage of 100V, a gate-source voltage of ±20V and a continuous drain current of -42A. Features: N and P-channel enhancement mode 100V drain-source voltage -42A continuous drain current 0.065 Ohm on-state resistance High power and current handling capability Low gate-source input capacitance Applications: This MOSFET can be used in various applications including power supply and battery management systems, power conversion, motor drives,rush current and in-rush current protection, and other various power management applications. (For reference only)
  • This is an N-channel MOSFET transistor manufactured by International Rectifier. Features: \r\n Low on-resistance \r\n Low gate charge \r\n Fast switching \r\n Low input capacitance \r\n Low threshold voltage \r\n High current capability Application: This MOSFET transistor is commonly used in power management applications such as DC-DC converters, motor control, and power switching. It is also used in audio amplifiers, switching regulators, and other power management applications. (For reference only)

Description

This HEXFET Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating.Additional features of this MOSFET are 175℃ operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.

 

Features     

  Advanced Process Technology

  Key Parameters Optimized for PDP Sustain

  Energy Recovery and Pass Switch Applications

  Low QG for Fast Response

  Short Fall & Rise Times for Fast Switching

 

DIY cooler using IRFB4227 & IR2110

We are going to make a cooler and heater using semiconductor thermo electric modules otherwise known as Peltier modules. These Peltier modules have an interesting function. When the Peltier module is supplied with voltage one side of the Peltier module will cool down and other side will be heated. We can change the cooling and heating side by reversing polarity. Which means we can use the same side of the Peltier module as a heating element or a cooler. To control these modules we are going to use IRFB4227 channel MOSFET and the IR2110 MOSFET gate driver.

 

What is IRFB4227

IRFB4227 is a N channel power MOSFET which we can used to switch high powered DC loads. In our application we are going to use IRFB4227 as the switching transistor of the thermoelectric modules. In below image you can see the symbol of the IRFB4227 n channel MOSFET.   

SupplierFile/202006/23/f_52cf9cc8782c4f98acc2081e1b61e4f7.png

Figure 1. – Symbol of the IRFB4227

Pinout of IRFB4227:

As same as most of the transistors IRFB4227 is also coming in a 3 pin package. You can see it’s physical appearance and the pinout shown in the below image.

SupplierFile/202006/23/f_409efb2b11b24ef38e61615da2ee008f.png

Figure 2. – Pinout and physical appearance of IRFB4227

Let’s see more details the pins of  IRFB4227 N channel power MOSFET.

      Pin 1 – G– Gate pin of the IRFB4227 MOSFET. This pin is used to control the IRFB4227.

      Pin 2 – D– Drain pin of the IRFB4227. In n channel Mosfets this pin is usually connected to the positive potential side of the intended connection.

      Pin 3 – S  – Source pin. This is the pin where usually connected to the lower potential compared to the drain pin.

 

Features of IRFB4227:

Lets discuss the main features of the IRFB4227 n channel power MOSFET

      High repetitive avalanche capabilities.

      Extremely short switching times in both rising and falling edges

      Maximum of 200V switching voltage



Preview of the first 3 pages of the data sheet

  • IRFB4227's pdf picture 1
  • IRFB4227's pdf picture 2
  • IRFB4227's pdf picture 3

Some Part number from the same manufacture

IRF3711PBF
HEXFET Power MOSFET
IRFZ46ZSTRLPBF
50V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
IRFZ48NSPBF
HEXFET Power MOSFET
IRF7822PBF
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7822 with Lead Free Packaging
IRFR3518TRPBF
80V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR3518TR with Lead Free Packaging on Tape and Reel
IRFR9120NTRLPBF
-100V Single P-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR9120NTRL with Lead Free Packaging on Tape and Reel Left
IRF3706STRRPBF
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF3706STRR with Lead Free Packaging on Tape and Reel Right
IRL520NSTRLPBF
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRL520NSTRL with Lead Free Packaging on Tape and Reel Left
Product Reviews

    Submit

    222 buyer reviews from India

    Alternate Text

    Raymond Whitehead

    IRFB4227
    gb United Kingdom UK

    Length of registration:16 years

    The effect is very good, I will buy it for a long time in the future.

    0

    0

    Reply0

    08/31/2022

    Alternate Text

    Bradley Hamilton

    IRFB4227
    us United States West park/hollywood

    Length of registration:6 years

    Very satisfied with

    0

    0

    Reply0

    11/19/2017

    Alternate Text

    Brian Nelson

    IRFB4227PBF N-CHANNEL 200V 65A (TC) 330W (TC) THROUGH HOLE TO-220AB IRFB4227
    us United States

    Length of registration:7 years

    I recently purchased an IC IRFB4227PBF N-CHANNEL 200V 65A (TC) 330W (TC) THROUGH HOLE TO-220AB from your vendor and I am very pleased with the product. The IC is of excellent qu and has been performing very well in my application. I have been using it in a power supply circuit and it has been able to handle the current and voltage requirements with ease. The package is also very robust and has bee

    0

    0

    Reply0

    03/17/2023

    Alternate Text

    Ruben Romo

    IRFB4227 IRFB4227PBF TO-220
    mx Mexico Encarnacion de Diaz

    Length of registration:5 years

    Very satisfied with

    0

    0

    Reply0

    12/04/2020

    Alternate Text

    ROBERT ALI

    IRFB4227PBF
    tt Trinidad and Tobago MIAMI

    Length of registration:7 years

    Tested, Working Great

    ProductImage ProductImage

    0

    0

    Reply0

    05/25/2019

    Alternate Text

    Pavlo Tereshin

    IRFB4227PBF
    md Moldova Tiraspol

    Length of registration:12 years

    Very satisfied with

    0

    0

    Reply0

    07/14/2018

    Alternate Text

    Enrique Barrajón Pati?o

    IRFB4227PBF
    es Spain Almagro

    Length of registration:9 years

    ok

    0

    0

    Reply0

    05/04/2018

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    See all reviews >>

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