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La descrizione del prodotto
Power Transistor Module
Tutti i nomi di prodotti, marchi, marchi e loghi utilizzati in questo sito sono di proprietà dei rispettivi proprietari. La rappresentazione, la descrizione o la vendita di prodotti con questi nomi, marchi, marchi e loghi è solo a scopo identificativo e non intende indicare alcuna affiliazione o autorizzazione da parte di alcun titolare dei diritti.
Introduction:
This transistor module is basically a transistor power module. Main function of this device is high current gain which is direct current in nature also used for switching purpose having diode installed in the circuit. Fuji is the company which produces this ic in bulk.
Core Parameters:
· High DC current gain
· Wheeling diode
· Available in insulated gate type
Working:
Therefore there will be no current flow flow at the transistor base where IBE = 0, and there will be no current output from the collector to the emitter since IC = IB = 0 indicating that the transistor is in a state determined by the circuit. . But a small portion of the leaking current flows the transistor from the collector to the emitter i.e., ICEO.
The transistor is said to be an idle condition only if the emitter circuit transmits the selectors and collectors. Thus, there will be an IB current flow in the transistor circuits and a current IC flow through the accumulation of the transistor emitter. When IB increases the IC also increases.
Circuit Diagram:
Applications:
· Alternating Current motor controls
· Direct current of motor controls
· In many products like uninterruptable power supply
Anteprima delle prime 3 pagine della scheda tecnica
Alcuni numeri di parte della stessa produzione
Some Part number from the same manufacture Fuji Electric Corp. |
6DI20C-050 Power Transistor Module |
6DI30A-120 |
6DI50C-050 |
6MBI00L-060 Igbt Module |
6MBI100F-060 |
6MBI100L-060 Igbt Module ( L Series ) |
6MBI100S-120 Igbt Module |
6MBI100S-140 |
6MBI10F-060 Igbt ( 600v 10a ) |
6MBI10GS-060 Igbt Module |
6MBI10L-060 Igbt ( 600v 10a ) |
6MBI10S-120 Igbt Module |
6MBI150FB-060 |
6MBI15F-060 Igbt ( 600v15a ) |
6MBI15GS-060 Igbt Module |
6MBI15L-060 Igbt ( 600v15a ) |
6MBI15S-120 |
6MBI200FB-060 Igbt Module |
6MBI20F-060 Igbt ( 600v 20a ) |
6MBI20GS-060 Igbt Module (Single-in-line) |
6MBI20L-060 Igbt ( 600v 20a ) |
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HiPerFASTTM IGBT with Diode Lightspeed Series Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions to 150°C; RGE 1 MW Continuous Transient 1 ms VGE 15 V, TVJ 22 W Clamped inductive load, = 25°C Maximum lead temperature for soldering mm (0.062 in.) from case for s Md Weight Mounting torque TO-247 TO-268 Characteristic. KBP005M : 1.5 Ampere Bridge Rectifiers. Maximum Repetitive Reverse Voltage Maximum RMS Bridge Input Voltage DC Reverse Voltage (Rated VR) Average Rectified Forward Current, = 50°C Non-repetitive Peak Forward Surge Current Storage Temperature Range Operating Junction Temperature 08M 10M *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. XN06435XN6435 : . Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. Parameter Collector to base voltage Rating Collector to emitter voltage of element Emitter to base voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO PT Tj Tstg 4 : Base 5 : Emitter. BAV70S62Z : 0.2 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE. s: Arrangement: Common Catode ; Diode Type: General Purpose ; IF: 200 mA ; Pin Count: 3 ; Number of Diodes: 2. CDRH3D11-100NB : 1 ELEMENT, 10 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Ferrite ; Lead Style: WRAPAROUND ; Application: General Purpose, Power Choke ; Inductance Range: 10 microH ; Inductance Tolerance: 30 (+/- %) ; DCR: 0.2400 ohms ; Rated DC Current: 900 milliamps. 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RF0515-000 : RESISTOR, TEMPERATURE DEPENDENT, PTC RESETTABLE FUSE, SURFACE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), ROHS COMPLIANT ; Power Rating: 1.8 watts (0.0024 HP) ; Operating AC Voltage: 16 volts ; Standards and Certifications: RoHS. RL-9580-1-1.2-100M : 1 ELEMENT, 10 uH, COMPOSITE-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: COMPOSITE ; Lead Style: WRAPAROUND ; Molded / Shielded: Shielded ; Application: General Purpose, High Current ; Inductance Range: 10 microH ; Rated DC Current: 1300 milliamps ; Operating Temperature:. SV4954 : 6.8 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE. s: Diode Type: VOLTAGE REGULATOR DIODE. 1SS315TPH2 : SILICON, UHF BAND, MIXER DIODE. s: Diode Type: MIXER DIODE ; Diode Applications: Mixer. |
513 recensioni di acquirenti da Italy
James Wright
Length of registration:7 years
The 6DI15A-050 integrated circuit from Utsource is an excellent choice for a wide range of applications. It offers high-performance, low-power operation and is designed to provide reliable, efficient operation in a wide range of conditions. Its features include a wide input voltage range, low power consumption, and a wide range of output current capabilities. This integrated circuit is an ideal ch
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03/17/2023
Heriberto Hohlke
Length of registration:10 years
OK
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11/08/2016
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6DI15A-050
6DI15A-050 ha diversi marchi in tutto il mondo che possono avere nomi alternativi per 6DI15A-050 a causa di differenze regionali o acquisizioni. 6DI15A-050 può anche essere noto come i seguenti nomi:
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Prodotti totali: 0Vendite totali: 26
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United States
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