TIP121 The Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low-speed switching applications. TIP120, TIP121, TIP122 (NPN)<br/> TIP125, TIP126, TIP127 (PNP) are complementary devices.

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TIP121

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Description

The Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low-speed switching applications. TIP120, TIP121, TIP122 (NPN)
TIP125, TIP126, TIP127 (PNP) are complementary devices.

Not found, similar datasheet recommended

Title

Medium Power NPN Darlington Bipolar Power Transistor

ECAD Module
Transistor Type: NPN
Brand: Mot/st
Package / Case: TO220
Maximum Continuous Collector Current: 5 A
Maximum Collector Emitter Voltage: 80 V
Maximum Emitter Base Voltage: 5 V
Package Type: TO-220
Mounting Type: Through Hole
Pin Count: 3
Transistor Configuration: Single
Number of Elements per Chip: 1
Minimum DC Current Gain: 1000
Maximum Collector Base Voltage: 80 V
Maximum Collector Emitter Saturation Voltage: 4 V
Maximum Collector Cut-off Current: 0.5mA
Width: 4.7mm
Maximum Power Dissipation: 65 W
Base Current: 120mA
Height: 16.3mm
Maximum Operating Temperature: +150 °C
Length: 10.67mm
Dimensions: 10.67 x 4.7 x 16.3mm

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ECAD Module

Product Attributes

Plastic Medium-Power Complementary Silicon Transistors

. . . designed for general–purpose amplifier and low–speed switching applications.

● High DC Current Gain —

hFE = 2500 (Typ) @ IC = 4.0 Adc

● Collector–Emitter Sustaining Voltage — @ 100 mAdc

VCEO(sus) = 60 Vdc (Min) — TIP120, TIP125

= 80 Vdc (Min) — TIP121, TIP126

= 100 Vdc (Min) — TIP122, TIP127

● Low Collector–Emitter Saturation Voltage —

VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc

= 4.0 Vdc (Max) @ IC = 5.0 Adc

● Monolithic Construction with Built–In Base–Emitter Shunt Resistors

● TO–220AB Compact Package

Preview of the first 3 pages of the data sheet

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Designed for general-purpose amplifier and low-speed switching applications.
Features

Monolithic Construction with Built-In Base-Emitter Shunt Resistors Pb-Free Packages are Available*

See detailed ordering and shipping information on page 3 of this data sheet.

*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

Operating and Storage Junction, Temperature Range THERMAL CHARACTERISTICS

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. = 100 mH, P.R.F. = 10 Hz, VCC 20 V, RBE 100 W

DC Current Gain (IC = 0.5 Adc, VCE = 3.0 Vdc) (IC = 3.0 Adc, VCE = 3.0 Vdc)
Collector-Emitter Saturation Voltage (IC = 3.0 Adc, = 12 mAdc) (IC = 5.0 Adc, = 20 mAdc)
Small-Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, = 1.0 MHz)

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%

Related products with the same datasheet

TIP120

Compliance : Pb A H P, Polarity : NPN, I_C Continuous (A) : 5, V_(BR)CEO Min (V) : 60, V_CE(sat) Max (V) : 2, h_FE Min (k) : 1, h_FE Max (k) : -, f_T

TIP122

Compliance : Pb A H P, Polarity : NPN, I_C Continuous (A) : 5, V_(BR)CEO Min (V) : 100, V_CE(sat) Max (V) : 2, h_FE Min (k) : 1, h_FE Max (k) : -, f_T

TIP125

Compliance : Pb A H P, Polarity : PNP, I_C Continuous (A) : 5, V_(BR)CEO Min (V) : 60, V_CE(sat) Max (V) : 2, h_FE Min (k) : 1, h_FE Max (k) : -, f_T

TIP126

Compliance : Pb A H P, Polarity : PNP, I_C Continuous (A) : 5, V_(BR)CEO Min (V) : 80, V_CE(sat) Max (V) : 2, h_FE Min (k) : 1, h_FE Max (k) : -, f_T

TIP127

Compliance : Pb A H P, Polarity : PNP, I_C Continuous (A) : 5, V_(BR)CEO Min (V) : 100, V_CE(sat) Max (V) : 2, h_FE Min (k) : 1, h_FE Max (k) : -, f_T

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TIP121 The Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low-speed switching applications. TIP120, TIP121, TIP122 (NPN)
TIP125, TIP126, TIP127 (PNP) are complementary devices.

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Alternate Names

TIP121

TIP121 has several brands around the world that may have alternate names for TIP121 due to regional differences or acquisition. TIP121 may also be known as the following names: