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2N7000 CASE   29-04,   STYLE  22  TO-92   (TO-226AA)
  • 2N7000
  • 2N7000
  • 2N7000
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CASE 29-04, STYLE 22 TO-92 (TO-226AA)

Not found, similar datasheet recommended

  • Channel Type: N
  • Brand: NXP Semiconductors
  • DateCode: 07+
  • Package / Case: TO92
  • Maximum Continuous Drain Current: 200 mA
  • Maximum Drain Source Voltage: 60 V
  • Maximum Drain Source Resistance: 5 Ω
  • Minimum Gate Threshold Voltage: 0.8V
  • Maximum Gate Source Voltage: -20 V, +20 V
  • Package Type: TO-92
  • Mounting Type: Through Hole
  • Transistor Configuration: Single
  • Pin Count: 3
  • Channel Mode: Enhancement
  • Category: Small Signal
  • Maximum Power Dissipation: 400 mW
  • Number of Elements per Chip: 1
  • Width: 4.19mm
  • Maximum Operating Temperature: +150 °C
  • Transistor Material: Si
  • Minimum Operating Temperature: -55 °C
  • Typical Input Capacitance @ Vds: 20 pF@ 25 V
  • Height: 5.33mm
  • Length: 5.2mm
  • Dimensions: 5.2 x 4.19 x 5.33mm

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Product Attributes

Not found, similar datasheet recommended

Features

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low CISS and fast switching speeds

Excellent thermal stability

Integral Source-Drain diode

High input impedance and high gain

Complementary N- and P-channel devices

 

Applications

Motor controls

Converters

Amplifiers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)

 

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.


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Edwin Clavijo Villavicencio

ec Ecuador Quito

Length of registration:8 years

Very satisfied with

TNY180PN DLA001D FSBS10CH60 FGH30S130P IKCM20L60GD TOP244PN DNP015NA ECN30210P TNY176PN TOP243YN STRX6759 MC3843B SIM6822M IKCM15F60GA APW7142KI VIPER17HN SPI-50X3S240 IKW75N60H3,K75H603 FSBS10CH60T RJH60F7DPQ MDF9N50 GT30J127 AUO-M201.20-Q27-T OB3365RP PS21964-4S 2N7000 M201-2V VIPER22A TNY275PN LNK626PG UC3846N

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06/07/2020

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Lesogorov Valeriy

ru Russia Vladivostok

Length of registration:3 years

Работает. Гуд!

PCB MB10S 2N7002-T1 1206 SMD LED RED LIGHT EMITTING DIODE (20PCS) YAGEO Chip Capacitor 0805 100nF 10% 25V X7R 0805 1% 5K6 5.6K MARK CODE 5601 CHIP RESISTORS KIA78L05F RTE ES2D HF115F-Q-012-1H(555) HF115F-Q-012-1H AC power outlet 15 a pure copper 3 feet product word with ears electric computer power socket 2N7000 FSQ500L PIC16F1825T-I/SL

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01/23/2020

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franck HORDE

fr France DOMART SUR LA LUCE

Length of registration:11 years

article conforme a l'annonce pas de soucis , merci .

A6159 FSD200B TNY277PN LNK626PG TNY180PN TNY278PN MIP2H2 STRW6053N HA12002 2N7000 GT45F122 D1047 B817 GT50J325 RJK5010 G4PC40K RJH3047A GP20B60PD 6N138 LME49720NA DM0365R TA7317P R6015ANX MDF18N50 FGT313 SANKEN TO220F MDF11N65B RJP30H2A MJE13007F2 ICE3BR1065JF

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