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FEATURES
● Static drain-source on-resistance: RDS(on) ≤23mΩ
● Enhancement mode:
● 100% avalanche tested
● Minimum Lot-to-Lot variations for robust device performance and reliable operation
DESCRITION
● High Frequency DC-DC Converters
| QUANTITY | UNIT PRICE | PLUS UNIT PRICE | TOTAL PRICE |
|---|---|---|---|
| ≥1: | US $7.15680 | US $6.72739 | US $6.72739 |
| ≥5: | US $6.79896 | US $6.39102 | US $31.95510 |
| ≥10: | US $6.44112 | US $6.05465 | US $60.54650 |
| ≥20: | US $6.26220 | US $5.88647 | US $117.72940 |
| ≥50: | US $6.08328 | US $5.71828 | US $285.91400 |
| ≥100: | US $5.41233 | US $5.08759 | US $508.75900 |
| ≥200: | US $5.24832 | US $4.93342 | US $986.68400 |
| ≥500: | US $5.18272 | US $4.87175 | US $2435.87500 |
| ≥1000: | US $5.08431 | US $4.77925 | US $4779.25000 |
Substitute (equivalent) Product
| Substitute Product | Description |
|---|---|
| IRFP90N20DPB | N-Channel Power MOSFET, 200V, 90A, 0.022 ohm Rds(on), TO-247AC package. |
| IPP90N20S3LR | N-Channel Power MOSFET, 200V, 99A, 0.022 ohm Rds(on), TO-220 package. |
| IRFP4229 | N-Channel Power MOSFET, 200V, 75A, 0.027 ohm Rds(on), TO-247 package. |
| IPP181N20N3 | N-Channel Power MOSFET, 200V, 140A, 0.012 ohm Rds(on), TO-220 package. |
| IRF540N | N-Channel Power MOSFET, 100V, 33A, 0.044 ohm Rds(on), TO-220 package. |
| STP75NF20 | N-Channel Power MOSFET, 200V, 80A, 0.009 ohm Rds(on), TO-220 package. |
| IRF840 | N-Channel Power MOSFET, 500V, 8A, 0.85 ohm Rds(on), TO-220 package. |
| NTF2955 | P-Channel Power MOSFET, 60V, 12A, 0.18 ohm Rds(on), TO-220 package. |
| FQP30N06 | N-Channel Power MOSFET, 60V, 30A, 0.035 ohm Rds(on), TO-220 package. |
Product Usage
The IRFP90N20D is a specific type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) known for its high current capacity and low on-resistance. This makes it suitable for a variety of high-power and high-efficiency applications. Here are some common circuits and applications where the IRFP90N20D might be used:
Power Supply Units (PSUs):
Motor Control Circuits:
Inverters and Converters:
Audio Amplifiers:
Renewable Energy Systems:
Automotive Electronics:
Inductive Load Control:
Battery Management Systems:
High-Power LED Drivers:
Welding Equipment:
Telecommunications:
In each of these applications, the IRFP90N20D is prized for its ability to handle high power levels with low loss, thanks to its low on-resistance (R_ds(on)) and robust thermal characteristics. When designing a circuit with this MOSFET, consider aspects such as proper heat sinking, gate drive requirements, and protection mechanisms like flyback diodes for inductive loads.
Global Logistics Country List
| Flag | Country | Estimated Delivery Time | Minimum First Weight Cost | ||
|---|---|---|---|---|---|
| Express | Standard Shipping | Express (0.5kg) | Standard Shipping (0.05kg) | ||
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Returns are normally accepted when completed within 90 days from the date of the parcel delivered.
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Warranty
All UTSOURCE purchases have a 90 days money back return policy, plus a 100 days UTSOURCE warranty against any manufacturing defects.This warranty shall not apply to any item where defects have been caused by improper customer assembly, failure by customer to follow instructions, product modification, negligent or improper operation.
IRFP90N20D
IRFP90N20D has several brands around the world that may have alternate names for IRFP90N20D due to regional differences or acquisition. IRFP90N20D may also be known as the following names:
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