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GT50JR22 50JR22 IGBT

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Transistor Type: IGBT
Package / Case: TO-3P
Collector-Emitter Voltage (V): 600 V
Collector Current (IC): 50 A
Gate-Emitter Voltage (VGE): ±20 V
Max Junction Temperature (TJ): 175 °C
Collector Dissipation (PC): 250 W
Package Type: TO-3P
Configuration: Single IGBT
Turn-On Time (Ton): 35 ns
Turn-Off Time (Toff): 250 ns
Operating Temperature Range: -40°C to +150°C
Mounting Style: Through Hole

Model comparison: GT50JR22 50JR22 IGBT vs YGW50N65F1 comparison

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Web Site	Package	Brand	Est. Market Price	Description
Texas Instruments (TI)	DIP-18	STMicro electronics	$2.55	单电源双运算放大器，电源范围3V至32V，短路保护输出单电源双运算放大器，电源范围3V至32V，短路保护输出
STMicroelectronics (ST)	DIP-18	STMicro electronics	$2.55	单电源双运算放大器，电源范围3V至32V，短路保护输出单电源双运算放大器，电源范围3V至32V，短路保护输出
DigiKey	DIP-18	STMicro electronics	$2.55	单电源双运算放大器，电源范围3V至32V，短路保护输出单电源双运算放大器，电源范围3V至32V，短路保护输出
Mouser	DIP-18	STMicro electronics	$2.55	单电源双运算放大器，电源范围3V至32V，短路保护输出单电源双运算放大器，电源范围3V至32V，短路保护输出
RS America	DIP-18	STMicro electronics	$2.55	单电源双运算放大器，电源范围3V至32V，短路保护输出单电源双运算放大器，电源范围3V至32V，短路保护输出

The parameters and performance indicators of this product are sourced from the internet. In case of discrepancies, please refer to the manufacturer's technical specifications!！

Product Attributes

Description: The GT50JR22 50JR22 is an Insulated Gate Bipolar Transistor (IGBT) module with a TO-3P package. It is designed for use in medium-power switching applications. Features: Low on-state voltage High current carrying capability Low switching losses High frequency operation Low EMI High reliability Applications: The GT50JR22 50JR22 IGBT is suitable for use in a variety of medium-power switching applications, such as motor control, power supplies, and UPS systems. (For reference only)

GT50JR22 IGBT

High-performance 50A, 600V insulated-gate bipolar transistor for industrial motor drives and power inverters.

Ultra-low conduction & switching losses

Short-circuit ruggedness (10 µs)

Optimized for 15–20 kHz operation

Isolated package with low thermal resistance

V_CE(sat)	2.3 V @ I_C = 50 A
E_ON/E_OFF	1.2 mJ / 0.45 mJ @ V_CC = 400 V
T_j max	150°C

QUANTITY	UNIT PRICE	PLUS UNIT PRICE	TOTAL PRICE
≥1:	US $3.11321	US $2.80189	US $2.80189
≥5:	US $2.07547	US $1.86792	US $9.33960
≥10:	US $1.86792	US $1.68113	US $16.81130
≥20:	US $1.81604	US $1.63443	US $32.68860
≥50:	US $1.76415	US $1.58774	US $79.38700
≥100:	US $1.56958	US $1.41262	US $141.26200
≥200:	US $1.52201	US $1.36981	US $273.96200
≥500:	US $1.50299	US $1.35269	US $676.34500
≥1000:	US $1.47445	US $1.32700	US $1327.00000

Substitute (equivalent) Product

Certainly! Below is a table containing substitute products for the GT50JR22 IGBT.

Substitute Product Name	Description
MGB50JAE60	600V, 50A, N-channel IGBT, Low saturation voltage, high input impedance, suitable for high-efficiency switching applications
IXGH60N60C2	600V, 60A, N-Channel IGBT, designed for efficient switching, high-speed performance, and low-energy loss
MG50Q2YS40	600V, 50A, N-Channel IGBT Module, optimized for minimal switching and conduction losses, with high reliability
FGA60N65SMD	650V, 60A, N-Channel IGBT, offering fast switching, high efficiency, and rugged performance
IRGB40B60KPBF	600V, 40A, N-Channel IGBT, optimized for low switching losses, and used in various high-speed applications

These substitutes are similar in their electrical characteristics and performance, making them potential alternatives to the GT50JR22 IGBT for compatible circuit designs.

Product Usage

The GT50JR22 is an Insulated Gate Bipolar Transistor (IGBT) that is typically used in high-power and high-voltage applications due to its efficiency and fast switching capabilities. While it's not tied exclusively to any specific type of circuit, it commonly appears in the following applications:

Inverters: Inverter circuits, which convert DC (Direct Current) to AC (Alternating Current), often use IGBTs like the GT50JR22 for their ability to handle high power and voltages. This includes applications such as power supplies for welding machines and solar inverters.
Motor Drives: The transistor can be found in variable frequency drives (VFDs) and other motor control units that need efficient power switching to control the speed and torque of AC motors.
Power Supplies: In high power power supply units (PSUs), particularly those that need to convert AC to DC at high efficiency, the GT50JR22 can be used to enhance performance and reliability.
Uninterruptible Power Supplies (UPS): In UPS systems that provide backup power, IGBTs like the GT50JR22 play a key role in ensuring efficient and reliable power conversion and delivery.
Induction Heating: For applications that involve induction heating, such as industrial furnaces and induction cooking, the GT50JR22 is used because of its high switching speed and efficiency under high-power conditions.
Electric Vehicles (EVs): In the powertrain and battery management systems of EVs, IGBTs are crucial for managing power conversion and delivering efficient power to the motor.
HVDC Converters: In high-voltage direct current (HVDC) transmission systems, IGBTs are used due to their ability to handle very high currents and voltages efficiently.
Welding Machines: The efficient and high-power switching capabilities of the GT50JR22 make it suitable for welding machines, where precise control of current and voltage is essential.
Lighting Ballasts: In ballasts for high-intensity discharge (HID) lamps and other lighting systems, IGBTs help in managing power efficiently.

While these are some of the common applications, circuit details, such as the exact topology and configuration, will vary depending on the specific requirements, ratings, and design considerations of the project.

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GT50JR22 50JR22 IGBT

GT50JR22 50JR22 IGBT has several brands around the world that may have alternate names for GT50JR22 50JR22 IGBT due to regional differences or acquisition. GT50JR22 50JR22 IGBT may also be known as the following names:

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