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G20N60

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Manufacturer Part Number: G20N60
Brand: FSC
DateCode: 10+
Package / Case: TO-247
Category: Integrated Circuits (ICs)
Warranty: 100% Perfect Functions

Model comparison: G20N60 vs CS20N60F comparison

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Web Site	Package	Brand	Est. Market Price	Description
Texas Instruments (TI)	DIP-18	STMicro electronics	$2.55	单电源双运算放大器，电源范围3V至32V，短路保护输出单电源双运算放大器，电源范围3V至32V，短路保护输出
STMicroelectronics (ST)	DIP-18	STMicro electronics	$2.55	单电源双运算放大器，电源范围3V至32V，短路保护输出单电源双运算放大器，电源范围3V至32V，短路保护输出
DigiKey	DIP-18	STMicro electronics	$2.55	单电源双运算放大器，电源范围3V至32V，短路保护输出单电源双运算放大器，电源范围3V至32V，短路保护输出
Mouser	DIP-18	STMicro electronics	$2.55	单电源双运算放大器，电源范围3V至32V，短路保护输出单电源双运算放大器，电源范围3V至32V，短路保护输出
RS America	DIP-18	STMicro electronics	$2.55	单电源双运算放大器，电源范围3V至32V，短路保护输出单电源双运算放大器，电源范围3V至32V，短路保护输出

The parameters and performance indicators of this product are sourced from the internet. In case of discrepancies, please refer to the manufacturer's technical specifications!！

Product Attributes

Parameter	Symbol	Min	Typ	Max	Unit	Description
Collector-Emitter Voltage	V_CE	-	-	600	V	Maximum voltage between collector and emitter with the base open.
Emitter-Collector Voltage	V_EC	-	-	600	V	Maximum voltage between emitter and collector with the base open.
Base-Emitter Voltage	V_BE	-	2.5	3.0	V	Maximum voltage between base and emitter.
Collector Current	I_C	-	-	20	A	Maximum continuous collector current.
Power Dissipation	P_T	-	-	180	W	Maximum power dissipation at T_C = 25°C.
Junction Temperature	T_J	-	-	150	°C	Maximum junction temperature.
Storage Temperature	T_STG	-40	-	150	°C	Operating temperature range for storage.
Transition Frequency	f_T	-	75	-	kHz	Frequency at which h_fe is reduced to 1.
Continuous Gate Charge	Q_G	-	100	-	nC	Total gate charge.
Turn-On Time	t_on	-	0.5	-	μs	Time required for the transistor to turn on.
Turn-Off Time	t_off	-	1.5	-	μs	Time required for the transistor to turn off.

Instructions:

Mounting and Handling:
- Ensure that the device is handled with care to avoid mechanical damage.
- Use appropriate heat sinks to manage the thermal resistance and ensure proper heat dissipation.
Electrical Connections:
- Connect the collector (C), emitter (E), and base (B) terminals correctly to avoid damage.
- Ensure that the maximum ratings for voltage, current, and power dissipation are not exceeded.
Operating Conditions:
- Operate the device within the specified temperature range to prevent thermal runaway.
- Use derating factors for power dissipation if operating at temperatures above 25°C.
Storage:
- Store the device in a dry, cool place to prevent moisture damage.
- Avoid exposure to extreme temperatures or corrosive environments.
Testing:
- Use a multimeter or appropriate testing equipment to verify the device parameters before installation.
- Follow safety guidelines to prevent electrical shock or damage to the device.
Application:
- The G20N60 is suitable for high-power switching applications, motor control, and other industrial electronics where high current and voltage handling is required.

(For reference only)

G20N60 — 600V, 20A N-Channel Power MOSFET

High-voltage, high-current power switching device ideal for SMPS, motor drives, and inverters.

Ultra-low gate charge for fast switching

Improved dv/dt capability

Full avalanche-rated

RoHS compliant

Parameter	Value
Drain-Source Voltage (V_DSS)	600 V
Continuous Drain Current (I_D)	20 A
On-Resistance (R_DS(on))	0.35 Ω (max)
Gate Threshold Voltage (V_GS(th))	2.0–4.0 V

QUANTITY	UNIT PRICE	PLUS UNIT PRICE	TOTAL PRICE
≥1:	US $1.97280	US $1.77552	US $1.77552
≥5:	US $1.31520	US $1.18368	US $5.91840
≥10:	US $1.18368	US $1.06531	US $10.65310
≥20:	US $1.15080	US $1.03572	US $20.71440
≥50:	US $1.11792	US $1.00613	US $50.30650
≥100:	US $0.99462	US $0.89516	US $89.51600
≥200:	US $0.96448	US $0.86803	US $173.60600
≥500:	US $0.95242	US $0.85718	US $428.59000
≥1000:	US $0.93434	US $0.84091	US $840.91000

Substitute (equivalent) Product

Substitute Product	Brief Description
IRFP460	N-channel MOSFET, 500V, 20A, 0.27 Ohm Rds(on), designed for high-speed switching applications.
STP75NF75	N-channel MOSFET, 75V, 80A, 0.009 Ohm Rds(on), ideal for high-performance DC-DC converters and motor control.
FQA19N60C	N-channel MOSFET, 600V, 18A, 0.28 Ohm Rds(on), suitable for high-voltage power switching applications.
IXFH50N50P	N-channel MOSFET, 500V, 50A, 0.07 Ohm Rds(on), known for its low on-resistance and high efficiency in power conversion.
APT50GT60JR	N-channel IGBT, 600V, 75A, 250W, offers low saturation voltage and high speed switching performance.
HGTG30N60B3D	N-channel IGBT, 600V, 60A, designed for medium to high power switching applications with improved efficiency and ruggedness.
STW30NB20	N-channel MOSFET, 200V, 30A, 0.07 Ohm Rds(on), suitable for industrial and consumer switching applications.
SKM200GB128D	Dual IGBT module, 1200V, 200A, offers high current capacity and efficiency, used in high power industrial applications.
RJP60D0DPK-M0-#Q	N-channel MOSFET, 600V, 30A, designed for high voltage, high speed switching with superior power efficiency.
K2611	N-channel MOSFET, 500V, 3.5A, 1.6 Ohm Rds(on), used in switching power supply and voltage regulators.

Product Usage

The G20N60 is an Insulated Gate Bipolar Transistor (IGBT) that can be used in various high-power and high-speed applications due to its ability to handle significant power levels and operate at high switching frequencies. Here are some common circuits and applications where the G20N60 might be used:

Inverters:
- Solar Inverters: Converts DC power from solar panels into AC power.
- Motor Drive Inverters: Used in converting DC to AC power for driving motors in industrial applications.
Pulse Width Modulation (PWM) Circuits:
- Motor Controllers: Used for variable speed control of motors.
- Power Supplies: Switching power supplies often utilize PWM for efficient power conversion.
Electric Vehicle (EV) Battery Chargers:
- DC fast chargers and onboard chargers for electric vehicles, where high-efficiency and high-power handling are crucial.
Uninterruptible Power Supplies (UPS):
- Used to convert stored DC power back to AC to provide uninterrupted power during outages.
High-Frequency Induction Heating:
- Utilized in industrial heating applications that require high-frequency power sources.
Switching Regulators:
- Essential in DC-DC converters that require efficient power operation.
Resonant Converters:
- Used in applications where high-frequency switching with minimal losses is required, such as LED drivers and audio amplifiers.
Welding Equipment:
- Power conversion and control circuits within welding machines.
Flyback and Forward Converters:
- These topologies require high-speed switching, making the G20N60 suitable for such use cases.
Power Factor Correction (PFC) Circuits:
- Used in improving the power factor of electrical appliances, often found in the input stages of AC-DC power supplies.

In such applications, the G20N60 is chosen for its ability to handle high currents (up to 40A) and high voltages (up to 600V), combined with relatively fast switching capabilities and good thermal performance. Always ensure that the specific parameters and requirements of your circuit are matched with the specifications of the G20N60 to ensure optimal performance and reliability.

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All UTSOURCE purchases have a 90 days money back return policy, plus a 100 days UTSOURCE warranty against any manufacturing defects.This warranty shall not apply to any item where defects have been caused by improper customer assembly, failure by customer to follow instructions, product modification, negligent or improper operation.

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G20N60

G20N60 has several brands around the world that may have alternate names for G20N60 due to regional differences or acquisition. G20N60 may also be known as the following names:

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