2N7002 Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

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Description

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

ECAD Module
Channel Type: N
Brand: NXP Semiconductors
DateCode: 13+
Package / Case: SOT-23
Maximum Continuous Drain Current: 115 mA
Maximum Drain Source Voltage: 60 V
Maximum Drain Source Resistance: 7.5 Ω
Minimum Gate Threshold Voltage: 1V
Maximum Gate Source Voltage: -20 V, +20 V
Package Type: SOT-23
Mounting Type: Surface Mount
Transistor Configuration: Single
Pin Count: 3
Channel Mode: Enhancement
Category: Small Signal
Maximum Power Dissipation: 200 mW
Maximum Operating Temperature: +150 °C
Width: 1.3mm
Height: 0.93mm
Dimensions: 2.92 x 1.3 x 0.93mm
Number of Elements per Chip: 1
Length: 2.92mm
Minimum Operating Temperature: -55 °C
Typical Input Capacitance @ Vds: 20 pF@ 25 V
Transistor Material: Si

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ECAD Module

Product Attributes

Preview of the first 3 pages of the data sheet

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2N7002

Greece ATHENS

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06/07/2019

Brian Clark

2N7002LT1G

United States

Length of registration:7 years

I recently purchased the 2N7002LT1G integrated circuit from Utsource and I am very pleased with the quality of the product. The integrated circuit arrived quickly and was well packaged. After testing the circuit, I found that it performed as expected and worked perfectly in my application. I highly recommend Utsource for their excellent customer service and quality products.

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03/17/2023

FAHRUDIN IMAMOVIC

2N7002KDWH

France Paris

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The pieces came well, I was surprised because it would take longer to arrive but not quite the opposite. Everything is perfect! Thank you! Pascal of NICE (France)

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09/26/2022

Ron Moore

2N7002W-7-F

United States Fort Wayne

Length of registration:1 years

I have been working with suppliers for a long time, and I have been very satisfied with the supply and price. The parts are genuine, the price is reasonable, the workmanship is fine, the material is good, the delivery is fast, and I will buy it again if necessary.

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2N7002K

Ecuador Quito

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2N7002-T1

Russia Vladivostok

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2N7002,215

Italy APRILIA

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2N7002 Electronic Component
2N7002 Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

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2N7002

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