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Description
Controlled Bridge Rectifier
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| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Supply Voltage | Vcc | 4.5 | 5 | 5.5 | V | |
| Output Current | Iout | Continuous | - | 100 | 200 | mA |
| Peak Output Current | Ioutp | Pulse | - | 300 | 500 | mA |
| Operating Temperature | Topr | -40 | - | 85 | °C | |
| Storage Temperature | Tstg | -65 | - | 150 | °C | |
| Output Voltage Drop | Vd | Iout = 100mA | - | 0.4 | 0.7 | V |
| Rise Time | Tr | RL = 100Ω | - | 5 | 10 | μs |
| Fall Time | Tf | RL = 100Ω | - | 5 | 10 | μs |
Supply Voltage:
Output Current:
Operating Temperature:
Storage Temperature:
Output Voltage Drop:
Rise and Fall Time:
Handling and Installation:
Testing:
Documentation:
High-performance dual N-channel MOSFET in a compact TO-252 package, optimized for power switching and motor control applications.
| Parameter | Value |
|---|---|
| VDS | 16 V |
| ID (continuous) | 70 A |
| RDS(on) | 16 mΩ max |
| PD | 83 W |
| QUANTITY | UNIT PRICE | PLUS UNIT PRICE | TOTAL PRICE |
|---|---|---|---|
| ≥1: | US $31.29000 | US $28.16100 | US $28.16100 |
| ≥2: | US $31.29000 | US $28.16100 | US $56.32200 |
| ≥5: | US $30.24700 | US $27.22230 | US $136.11150 |
| ≥10: | US $29.82980 | US $26.84682 | US $268.46820 |
| ≥20: | US $29.62120 | US $26.65908 | US $533.18160 |
| ≥30: | US $29.20400 | US $26.28360 | US $788.50800 |
| ≥50: | US $29.20400 | US $26.28360 | US $1314.18000 |
| ≥100: | US $28.99540 | US $26.09586 | US $2609.58600 |
| ≥500: | US $28.78680 | US $25.90812 | US $12954.06000 |
Substitute (equivalent) Product
| Substitute Product | Brief Description |
|---|---|
| SK60DT16 | Dual Insulated Gate Bipolar Transistor (IGBT) Module, 600V, 60A |
| SK50DT16 | IGBT Module, 1600V, 50A |
| IRG4PC50W | IGBT, 600V, 35A, TO-247 Package |
| FF100R12RT4 | IGBT Module, 1200V, 100A |
| MG50Q2YS40 | Power Transistor Module, 1400V, 50A |
| FP50R12KT4 | IGBT Module, 1200V, 50A |
| CM75DU-24H | Power IGBT Module, 1200V, 75A |
| BG100AX12 | IGBT Module, 1200V, 100A |
| MG150Q1US41 | Dual IGBT Module, 600V, 150A |
| FMG2G75US60 | IGBT Module, 600V, 75A |
Product Usage
The SK70DT16 is a silicon-controlled rectifier (SCR) device often used in high-power applications. SCRs are semiconductor devices that can act as switches, controlling the flow of electrical power. Here are some circuits where the SK70DT16 might be used:
Power Converters:
Motor Control Circuits:
Inverters:
Crowbar Circuits:
Phase Control Circuits:
Pulse Power Circuits:
Battery Chargers:
Static Switches:
Before incorporating the SK70DT16 into any circuit, ensure that its specifications match the requirements of your application—particularly voltage, current, and thermal considerations. Proper heat sinking and safety precautions are essential given the high power nature of applications using such components.
Global Logistics Country List
| Flag | Country | Estimated Delivery Time | Minimum First Weight Cost | ||
|---|---|---|---|---|---|
| Express | Standard Shipping | Express (0.5kg) | Standard Shipping (0.05kg) | ||
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Returning
Returns are normally accepted when completed within 90 days from the date of the parcel delivered.
Defective ( Please provide a third party quality report of nonconforming products)
Return Freight charges must be prepaid; we will not accept COD shipments.
Warranty
All UTSOURCE purchases have a 90 days money back return policy, plus a 100 days UTSOURCE warranty against any manufacturing defects.This warranty shall not apply to any item where defects have been caused by improper customer assembly, failure by customer to follow instructions, product modification, negligent or improper operation.
SK70DT16
SK70DT16 has several brands around the world that may have alternate names for SK70DT16 due to regional differences or acquisition. SK70DT16 may also be known as the following names:
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