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Description
High Voltage Rectifer Diodes
All product names, trademarks, brands and logos used on this site are the property of their respective owners. The depiction, description or sale of products featuring these names, trademarks, brands and logos is for identification purposes only and is not intended to indicate any affiliation with or authorization by any rights holder.
The parameters and performance indicators of this product are sourced from the internet. In case of discrepancies, please refer to the manufacturer's technical specifications!！
Below is the parameter table and instructions for the BSM50GX120DN2, a high-performance IGBT (Insulated Gate Bipolar Transistor) from Infineon Technologies.
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCE(max) | - | - | 1200 | V | Tj = 25°C |
| Gate-Emitter Voltage | VGE(max) | - | - | ±20 | V | |
| Continuous Collector Current | IC(max) | - | - | 50 | A | Tcase = 25°C, Tj = 150°C |
| Pulse Collector Current | IC(max, pulse) | - | - | 200 | A | tp = 10 μs, IC/IC(max) ≤ 2 |
| Total Power Dissipation | PTOT(max) | - | - | 400 | W | Tcase = 25°C, Rth(j-c) = 0.6 K/W |
| Junction Temperature | Tj(op) | -100 | - | 150 | °C | |
| Storage Temperature | Tstg | -55 | - | 150 | °C | |
| Thermal Resistance, Junction to Case | Rth(j-c) | - | 0.6 | - | K/W | |
| Turn-On Time | ton | - | 1.2 | 1.8 | μs | IC = 50 A, VGE = 15 V, VCE = 600 V |
| Turn-Off Time | toff | - | 1.5 | 2.2 | μs | IC = 50 A, VGE = -15 V, VCE = 600 V |
| Saturation Voltage | VCE(sat) | - | 2.0 | 2.5 | V | IC = 50 A, VGE = 15 V, Tj = 25°C |
| Gate Charge | QG | - | 100 | 130 | nC | IC = 50 A, VGE = 15 V, VCE = 600 V |
Handling and Storage:
Mounting:
Electrical Connections:
Operating Conditions:
Testing:
Safety Precautions:
By following these parameters and instructions, you can ensure reliable and efficient operation of the BSM50GX120DN2 in your application.
(For reference only)Introduce this module:
The BSM50GX120DN2 is a general purpose IGBT, that can fit to many applications in an electrical system. Combining both the advantages of Biploar Junction Transistors and MOSFET, it can give you an added advantage over conventional transistor in the field of Power electronics and circuits. At the same time it can also provide good switching advantage that cannot be achieved by BJT or a MOSFET
Some Core parameters of the module
● Peak reverse voltage : 1600V
● RMS forward current per chip : 40A
● DC forward current: 500A
● Surge forward current : 1250A
● Collector – Emitter Voltage: 1200V
● DC Collector Current; 80A
● Repetitive peak collector current: 100A
● Total power dissipation: 360W
● Gate emitter peak voltage: + - 20V
● DC forward current : 50A
● Repetitive peak forward current: 100A
How it use in the work(machine, daily life),
As a Rectifier
As a Chopper Circuit
Preview of the first 3 pages of the data sheet
| QUANTITY | UNIT PRICE | PLUS UNIT PRICE | TOTAL PRICE |
|---|---|---|---|
| ≥1: | US $91.80600 | US $86.29764 | US $86.29764 |
| ≥2: | US $91.80600 | US $86.29764 | US $172.59528 |
| ≥5: | US $85.68560 | US $80.54446 | US $402.72230 |
| ≥10: | US $85.68560 | US $80.54446 | US $805.44460 |
| ≥20: | US $85.68560 | US $80.54446 | US $1610.88920 |
| ≥30: | US $85.68560 | US $80.54446 | US $2416.33380 |
| ≥50: | US $85.68560 | US $80.54446 | US $4027.22300 |
| ≥100: | US $85.07356 | US $79.96915 | US $7996.91500 |
| ≥500: | US $84.46152 | US $79.39383 | US $39696.91500 |
Substitute (equivalent) Product
| Product Name | Description |
|---|---|
| BSM50GD120DN2 | 1200V, 50A, N-Channel MOSFET, TO-247-3L |
| BSM50GD120DN1 | 1200V, 50A, N-Channel MOSFET, TO-247-3L |
| IPW50R120C6 | 1200V, 50A, N-Channel MOSFET, TO-247-3L |
| FFSP50120W | 1200V, 50A, N-Channel MOSFET, TO-247-3L |
Product Usage
The BSM50GX120DN2 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module designed for various power electronics applications. It is particularly suited for high-power and high-frequency switching operations due to its low on-state voltage drop, high current handling capability, and robust thermal performance. Here are some common circuits and applications where the BSM50GX120DN2 might be used:
Motor Drives:
Power Supplies:
Renewable Energy Systems:
Uninterruptible Power Supplies (UPS):
Welding Machines:
Induction Heating:
Electric Vehicle (EV) Chargers:
Plasma Cutting and Welding:
A common application of the BSM50GX120DN2 is in a three-phase inverter circuit, which is essential in motor drives and renewable energy systems. Here’s a simplified diagram of a three-phase inverter using IGBTs:
Required+-------------------+
| |
| DC Power Supply |
| |
+-------------------+
|
V
+-------------------+
| |
| IGBT Driver |
| (e.g., IR2110) |
| |
+-------------------+
|
V
+-------------------+ +-------------------+ +-------------------+
| | | | | |
| BSM50GX120DN2 | | BSM50GX120DN2 | | BSM50GX120DN2 |
| (IGBT Module) | | (IGBT Module) | | (IGBT Module) |
| | | | | |
+-------------------+ +-------------------+ +-------------------+
| | |
V V V
+-------------------+ +-------------------+ +-------------------+
| | | | | |
| Motor Winding A | | Motor Winding B | | Motor Winding C |
| | | | | |
+-------------------+ +-------------------+ +-------------------+
This setup allows for efficient and precise control of the three-phase motor or other three-phase loads.
If you have a specific application or circuit in mind, feel free to provide more details, and I can offer more tailored advice!
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All UTSOURCE purchases have a 90 days money back return policy, plus a 100 days UTSOURCE warranty against any manufacturing defects.This warranty shall not apply to any item where defects have been caused by improper customer assembly, failure by customer to follow instructions, product modification, negligent or improper operation.
BSM50GX120DN2
BSM50GX120DN2 has several brands around the world that may have alternate names for BSM50GX120DN2 due to regional differences or acquisition. BSM50GX120DN2 may also be known as the following names:
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