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Utsource certified used parts
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1. Utsource will inspect the goods, including appearance inspection (no serious damage to the appearance), select qualified and honest suppliers, and ensure 98% qualification rate.
2. Some parts are tested by machine.
3. Utsource certified parts can be returned and refunded unconditionally within 60 days.
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The parameters and performance indicators of this product are sourced from the internet. In case of discrepancies, please refer to the manufacturer's technical specifications!！
| Parameter | Symbol | Min | Typical | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | 650 | - | V | |
| Gate-Source Voltage | VGS | -20 | - | 20 | V | |
| Continuous Drain Current | ID | - | 11 | - | A | TC = 25°C |
| Pulse Drain Current | IDpeak | - | 33 | - | A | tp = 10 μs, IGT = 4 A |
| Total Power Dissipation | PTOT | - | 190 | - | W | TC = 25°C |
| Junction Temperature | TJ | - | - | 150 | °C | |
| Storage Temperature Range | TSTG | -55 | - | 150 | °C | |
| Thermal Resistance, Junction to Case | RθJC | - | 0.8 | - | °C/W | |
| Input Capacitance | Ciss | - | 1700 | - | pF | VDS = 400 V, f = 1 MHz |
| Output Capacitance | Coss | - | 110 | - | pF | VDS = 400 V, f = 1 MHz |
| Reverse Transfer Capacitance | Crss | - | 50 | - | pF | VDS = 400 V, f = 1 MHz |
| Turn-On Delay Time | td(on) | - | 45 | - | ns | VGS = 15 V, ID = 11 A |
| Rise Time | tr | - | 45 | - | ns | VGS = 15 V, ID = 11 A |
| Turn-Off Delay Time | td(off) | - | 45 | - | ns | VGS = -15 V, ID = 11 A |
| Fall Time | tf | - | 45 | - | ns | VGS = -15 V, ID = 11 A |
Handling Precautions:
Mounting:
Biasing:
Operation:
Storage:
Testing:
Safety:
Introduction: MDF11N65B IC chip is a N-Channel MOSFET which is produced and fabricated with magna chips technology. The integrated circuit provides very low impedance and low state resistance characteristics offering the best quality and reliable excellent functionality. This type of IC’s is best suitable for the integration of SMPS and high speed switching appliance and general purpose applications. The enhancement and functional operation of IC is with maximum power dissipation and gate source voltage. The load and other characteristics of the IC performs well with the switching components of the electronic circuit. MDF11N65B IC Circuit Diagram: The circuit diagram of the IC MDF11N65B is shown in the figure below having 3 pinout configuration. The electrical characteristics is suitable and reliable for the fast switching applications. This is the pinning characteristics and details of the IC MDF11N65B. the simplified and best fabrication makes it reliable and user friendly for various applications and uses. Key Features of MDF11N65B: 1.Fabricated with the help of Magna Chip MOSFET technology 2.It is a N channel MOSFET transistor 3.The maximum power dissipation from the IC is 49.6W 4.Maximum Drain-Source and Gate-Source voltage is 650V and 30V 5.The optimum temperature for the operational working is 150 Degree Celsius Applications of MDF11N65B IC: The IC is extensively used in the applications of LED, LCD drivers TV’s and for fast switching characteristics of the electronic devices. As shown in the figure below it is used for the TV driver 1.This IC is used for the high speed switching circuit and electronic devices 2.Extensively used for the SMPS and general purpose applications 3.Used for LED and LCD TV drivers
| QUANTITY | UNIT PRICE | PLUS UNIT PRICE | TOTAL PRICE |
|---|---|---|---|
| ≥1: | US $1.32750 | US $1.19475 | US $1.19475 |
| ≥5: | US $0.88500 | US $0.79650 | US $3.98250 |
| ≥10: | US $0.79650 | US $0.71685 | US $7.16850 |
| ≥20: | US $0.77438 | US $0.69694 | US $13.93880 |
| ≥50: | US $0.75225 | US $0.67702 | US $33.85100 |
| ≥100: | US $0.73012 | US $0.65711 | US $65.71100 |
| ≥200: | US $0.70800 | US $0.63720 | US $127.44000 |
| ≥500: | US $0.69915 | US $0.62923 | US $314.61500 |
| ≥1000: | US $0.68588 | US $0.61729 | US $617.29000 |
Substitute (equivalent) Product
| Product Name | Description |
|---|---|
| IRF840 | N-Channel MOSFET, TO-220 Package, 500V, 8A, 0.3Ω @ 10Vgs |
| STP36NF06L | N-Channel MOSFET, TO-220 Package, 60V, 36A, 0.019Ω @ 10Vgs |
| IRLZ44N | N-Channel MOSFET, TO-220 Package, 55V, 30A, 0.025Ω @ 10Vgs |
| FDP5500 | N-Channel MOSFET, TO-220 Package, 55V, 30A, 0.017Ω @ 10Vgs |
| IXFN120N50T2 | N-Channel MOSFET, TO-220 Package, 500V, 120A, 0.085Ω @ 10Vgs |
Product Usage
The MDF11N65B is a silicon carbide (SiC) MOSFET, which is known for its high efficiency and robust performance in high-voltage and high-frequency applications. This type of component is typically used in circuits that require:
Power Conversion:
Motor Control:
Renewable Energy Systems:
Automotive Applications:
High-Frequency Switching Applications:
Industrial Power Electronics:
The MDF11N65B, with its high voltage rating (650V) and low on-state resistance, is particularly well-suited for these applications due to its ability to handle high voltages and currents while maintaining low losses and high reliability.
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|---|---|---|---|---|---|
| Express | Standard Shipping | Express (0.5kg) | Standard Shipping (0.05kg) | ||
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Warranty
All UTSOURCE purchases have a 90 days money back return policy, plus a 100 days UTSOURCE warranty against any manufacturing defects.This warranty shall not apply to any item where defects have been caused by improper customer assembly, failure by customer to follow instructions, product modification, negligent or improper operation.
MDF11N65B
MDF11N65B has several brands around the world that may have alternate names for MDF11N65B due to regional differences or acquisition. MDF11N65B may also be known as the following names:
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