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HFA50PA60C Hexfred(tm) Ultra Fast, Soft Recovery Diode 600v, 50a
  • HFA50PA60C
  • HFA50PA60C
  • HFA50PA60C
Sales:13
113521

5.0 out of 5 stars

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2 star 0%
3 star 0.2%
4 star 0.4%
5 star 99.1%

Total products: 2398055

Total sales: 12724315

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HFA50PA60C

USED

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Description

Hexfred(tm) Ultra Fast, Soft Recovery Diode 600v, 50a

  • ECAD Module
  • Diode Type: Standard
  • Brand: International Rectifier
  • DateCode: 00+
  • Package / Case: TO-247
  • Diode Configuration: 1 Pair Common Cathode
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 25A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 25A
  • Current - Reverse Leakage @ Vr: 20μA @ 600V
  • Reverse Recovery Time (trr): 75ns
  • Speed: Fast Recovery =< 500ns,>200mA (Io)
  • Mounting Type: Through Hole
  • Packaging: Tube
  • Lead Free Status: Contains Lead
  • RoHS Status: RoHS Non-Compliant

All product names, trademarks, brands and logos used on this site are the property of their respective owners. The depiction, description or sale of products featuring these names, trademarks, brands and logos is for identification purposes only and is not intended to indicate any affiliation with or authorization by any rights holder.

ECAD Module

Product Attributes

  • Description: HFA50PA60C is a high-voltage, high-speed, insulated-gate bipolar transistor (IGBT) module manufactured by International Rectifier (IR). Features: High voltage: 600V Low on-state resistance: 0.50 ohms High switching speed: 1.5μs Low saturation voltage: 2.2V High current capability: 50A Low gate drive power: 1.5W RoHS compliant Applications: HFA50PA60C is suitable for applications such as motor drives, welding, UPS, solar inverters, and other high-power switching applications. (For reference only)

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HFB16HY20C 200V 16A Hi-rel Ultra-fast Discrete Diode in a TO-257AA Package
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HFB25HJ20 200V 25A Hi-rel Ultra-fast Discrete Diode in a SMD-0.5 Package

305U160P4 : Standard Recovery Diode

MBRD660CTTRR : Schottky Rectifier 6 Amp

2N3095 : 110 AMP RMS SCRS

IRGS15B60KPBF : Igbt - Single Discrete Semiconductor Product; IGBT SINGLE Specifications: Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant

IRF6215-003PBF : 11 A, 150 V, 0.29 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB Specifications: Polarity: P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 150 volts ; rDS(on): 0.2900 ohms ; Number of units in IC: 1

IRL2703-029PBF : 24 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0400 ohms ; Number of units in IC: 1

OMR9801SFH : 2.5 V FIXED POSITIVE LDO REGULATOR, 0.4 V DROPOUT, MSFM5 Specifications: Regulator Type: Low Dropout ; Output Polarity: Positive ; Output Voltage Type: Fixed ; Package Type: Other, TO-258AA, MO-078AA, 5 PIN ; Life Cycle Stage: ACTIVE ; Output Voltage: 2.38 to 2.62 volts ; IOUT: 3 amps ; VIN: 2.9 to 6.5 volts ; Dropout Voltage: 0.4000 volts

SD203R08S10MV : 200 A, 800 V, SILICON, RECTIFIER DIODE, DO-205AB Specifications: Configuration: Single ; Pin Count: 1 ; Number of Diodes: 1 ; IF: 200000 mA ; trr: 1 ns ; VRRM: 800 volts ; RoHS Compliant: RoHS

ST330C08L0LPBF : 1420 A, 800 V, SCR, TO-200AB Specifications: VDRM: 800 volts ; VRRM: 800 volts ; IT(RMS): 1420 amps ; IGT: 200 mA ; Pin Count: 2

5962-94B0302MTX : 2-OUTPUT 100 W DC-DC REG PWR SUPPLY MODULE Specifications: Package Type: Other, FM-12 ; Output Voltage: 15 volts ; Input Voltage: 16 to 40 volts ; Output Power: 100 watts (0.1340 HP) ; Operating Temperature: -55 to 125 C (-67 to 257 F)

Same catergory

Same catergory

1N4938-1 : Signal or Computer Diode. Signal or Computer Diode, Package : DO-35. These silicon switching diodes are available in DO-35 glass packages and LL4938 Mini-Melf (DO-213AA). These devices are used in generalpurpose applications where high voltage and switching speed are important. When ordering Mil-PRF-19500/169 parts, use the number with the appropriate 1N4938-1 JAN, JTX or JTXV prefix. metallurgical bonded. available.

BAL99 : BAL99; High-speed Diode;; Package: SOT23 (SST3). Small plastic SMD package High switching speed: max. 4 ns Continuous reverse voltage: max. 70 V Repetitive peak reverse voltage: max. 70 V Repetitive peak forward current: max. 500 mA. APPLICATIONS High-speed switching in e.g. surface mounted circuits. Marking code: JFp = made in Hong Kong; JFt = made in Malaysia. The is a high-speed switching diode.

MUR3020WT : Ultrafast Rectifier. Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 175°C Operating Junction Temperature International Rectifier's MUR. series are the state of the art Ultra fast recovery rectifiers specifically designed with optimized performance of forward voltage drop and ultra fast recovery time. The planar structure and the platinum doped life.

NTE308P : Integrated Thyristor/rectifier (ITR), TV Horizontal Deflection & Commutating Switch..

SF210 : Ultra fast rectifier diodes. Ultra Fast Rectifier Diodes.

SIGC11T60NC : HV Chips. For Drive Application. : 600V NPT technology 100µm chip positive temperature coefficient easy paralleling This chip is used for: IGBT Modules Applications: drives MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization.

UF510 : Ultra Fast Rectifier (less Than 100ns), Package : DO-201AD.

05002-130BJMC : CAPACITOR, CERAMIC, MULTILAYER, 100 V, BP, 0.000013 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 1.30E-5 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 100 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface.

0805Z254M160NT : CAPACITOR, CERAMIC, MULTILAYER, 16 V, Z5U, 0.25 uF, SURFACE MOUNT, 0805. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 0.2500 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 16 volts ; Mounting Style:.

GRM21B7U1A104JA01B : CAPACITOR, CERAMIC, MULTILAYER, 10 V, U2J, 0.1 uF, SURFACE MOUNT, 0805. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 0.1000 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 10 volts ; Temperature Coefficient: -750 ppm/°C ; Mounting Style: Surface.

HR101XE1328 : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 250 V, 12000 uF, STUD MOUNT. s: RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 12000 microF ; Capacitance Tolerance: 75 (+/- %) ; WVDC: 250 volts ; Leakage Current: 860 microamps ; ESR: 18 milliohms ; Mounting Style: STUD MOUNT ; Operating Temperature: -55 to 105 C (-67 to 221 F).

MMPQ2369R2G : 4 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR. s: Polarity: NPN ; Package Type: CASE 751B-05, SOIC-16 ; Number of units in IC: 4 ; Operating Frequency: 550 MHz.

PUMB30/T1 : 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: PNP ; Package Type: PLASTIC, SC-88, 6 PIN.

QM30TB-H : POWER TRANSISTOR.

SHD118512 : 120 A, SILICON, RECTIFIER DIODE. s: Arrangement: Common Catode ; Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, EFFICIENCY ; IF: 120000 mA ; Package: HERMETIC SEALED, SHD-5, 3 PIN ; Pin Count: 3 ; Number of Diodes: 2.

VSKU106/04P : SCR. s: Thyristor Type: SCR ; Package Type: ROHS COMPLIANT PACKAGE-7 ; Pin Count: 7 ; Standards and Certifications: RoHS.

934055787115 : 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: NPN ; Package Type: PLASTIC, UMT6, SC-88, 6 PIN.

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    Lauren Hughes

    HFA50PA60C
    us United States

    Length of registration:7 years

    I recently tested the Utsource HFA50PA60C integrated circuit, and I am very pleased with the results. The circuit worked perfectly and met all of my expectations. The qu was excellent and the delivery was prompt. I would highly recommend Utsource for anyone looking for reliable and high-qu integrated circuits.

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    03/17/2023

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