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Stock Status: 92139

Minimum:1

Price:
US $0.60
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  • Encapsulation: TO-252
  • Brand: Renesas
  • ≥1: US $0.59606 US $0.53646
  • ≥10: US $0.49672 US $0.44705
  • ≥100: US $0.47188 US $0.42470

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1. Description

This device is a N-channel Power MOSFETs made using the second generation of MDmesh? technology. 

This revolutionary transistor associates a new vertical structure to the company’s strip layout to yield one 

of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high 

efficiency converters.


 2.  Features

> Trench gate and thin wafer technology (G6H-II series)

> High speed switching: tr = 80 ns typ., tf = 150 ns typ.

> Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ.

> Low leak current: ICES = 1 A max. 


Reviews More>>

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    Thanks for your feedback!

    Ecuador

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    Excellent service, fast delivery, nice packing!

    Russia

    BTS452R

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    Good quality and delivery. I've become a regular client.

    Romania

    FSDM0565R,VND5050AK-E,CXK1005P-1,PIC16F84A-20/P,ICE3BS02,HGTG40N60A4D,AS15-G,AS15-F

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    ótimo servi?o, tudo perfeito

    Brazil

    MRF1550N

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    Very fast shipping, great seller. Recommended.

    Croatia

    AN2131SC,M29F800AB-70N1,PBL3771,NJM3775D2,LP621024D-55LL,DM0565R

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