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G30T60
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G30T60

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  • ECAD Module
  • Manufacturer Part Number: G30T60
  • Package / Case: TO-3P
  • Category: Integrated Circuits (ICs)
  • Warranty: 100% Perfect Functions

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ECAD Module

Product Attributes

  • Description: The G30T60 is a 600V, 30A Insulated Gate Bipolar Transistor (IGBT) module with two MOSFETs and one diode. Features: Low switching losses Low EMI noise High temperature resistance Low on-state resistance Low gate charge High current gain Integrated freewheeling diodes Applications: The G30T60 is used in applications where high voltage, high power and high current are needed, such as power conversion, renewable energy systems, solar inverters, uninterruptible power supplies, motor drives and welding applications. (For reference only)

G30T60 IGBT  Description

This IGBT is combined by isolated gate Field Effect Transistor and Bipolar Junction Transistor in a single package. It comes in TSOP package.

 

G30T60 Features

● It contains following features

● It has very low collector to emitter voltage typically 1.5 volts

● It has maximum junction temperature typically 175

● It comes with short circuit and over voltage protection

● It has very tight parameter distribution

● It has very high switching speed

● It has low electromagnetic interface

● It has very high switching speed

● It comes with low gate charge

● It has collector emitter voltage typically 600 volts maximum

● It has DC collector current typically 60 Amperes at  25 and 30 Amperes at 100

● It has pulsed collector current typically 90 Amperes

● It has turn off safe operating area typically 90 Amperes

● It has gate emitter voltage typically 20 volts

● It has short circuit withstand time typically 5 micro seconds

● It has power dissipation typically 187 watts

● It has storage temperature typically -40 to 175

● It has pulsed collector current typically 90 Amperes

● It has short circuit withstand time typically 5 micro seconds

● It has collector emitter breakdown voltage typically 600 volts with collector current 0.2 Amperes

● It has gate emitter threshold voltage typically 4.1 volts

● It has zero gate voltage collector current typically 40 micro Amperes

● It has gate emitter leakage current typically 100 nano Amperes

● It has transconductance typically 16.7 Siemens

● It has input capacitance typically 1630 pico Farads with collector emitter voltage 25 volts and 1 Mega Hertz frequency

● It has output capacitance typically 108 pico Farads with collector emitter voltage 25 volts and 1 Mega Hertz frequency

● It has short circuit collector current typically 275 Amperes

● It has internal emitter inductance typically ranging from 7 to 13 nano Henry

● It has turn on delay time typically 23 nano seconds

● It has rise time typically 21 nano seconds

● It has turn off delay time typically 254 nano seconds

● It has turn on energy typically 0.69 milli Joules

● It has turn off energy typically 0.77 milli Joules

● It has total switching energy typically 1.46 milli Joules

 

Pin Description

SupplierFile/202007/13/f_627ccc332caa45d9bb121392e76e0911.png

G30T60 Applications

It is used in following applications

Frequency Converters

Uninterruptible Power Supply

The alternative of G30T60 is IGP30N60T

The equivalent of G30T60 is 40N60NPFD

 Conclusion:  It is used in switching applications as the system needs to drive heavy loads.



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    Jason Potts

    G30T60
    us United States Camas

    Length of registration:9 years

    The service attitude of the merchant is very good, and any questions are answered in time. The delivery is fast, the packaging is tight, and it is as good as the introduction.

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    11/08/2022

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    Paulo Reitz

    G30T60
    br Brazil Blumenau

    Length of registration:4 years

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    01/08/2020

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