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Description
Technische Information / technical information
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Introduction:
It is an Insulated Gate Bipolar Transistor IGBT module, its base is insulated and has 3 terminals, its primarily used as a switch in an inverter circuit. It takes the best parts of Biploar Junction Transistor and Field Effect Transistor, making it ideal as a semiconductor switching device. The advantage attained by the insulated gate bipolar transistor device over the BJT or MOSFET is that it provides greater power gain than the conventional bipolar type transistor.
Features:
· Voltage Rating above 1kV
· Current Rating above 500A
· Input Voltage VGE 4 - 8V
· High Input Impedance
· Low Output Impedance
· Medium Switching Speed
Application:
The FS100R12KE3 is similar to the power transistor, except that its gate is controlled by the voltage applied rather than the current flowing into its base, as we have it in power transistors.
This device is equivalent to the combination of a MOSFET and a power transistor. Since the current required to control an IGBT is very small, because of the impedance at the gate is very high. This means that it can be switched much more quickly than a power transistor. The IGBTs are normally used in high-power circuits design, high-frequency applications and inverters
· Inverters circuits – used to invert phase, frequency of voltages that can be used to convert DC to AC.
· It is used in building converters.
· It is used in building power bipolars and power MOSFETs
Preview of the first 3 pages of the data sheet
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Jose Brito
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Perfectly packed and exceeded expectations
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Super !
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08/29/2019
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FS100R12KE3
FS100R12KE3 has several brands around the world that may have alternate names for FS100R12KE3 due to regional differences or acquisition. FS100R12KE3 may also be known as the following names:
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Stock Status: 5000
Minimum: 1
Total Price:
Unit Price:75.22200
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