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Description
600V Single N-channel HexFET Power MOSFET in a TO-220AB Package
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Preview of the first 3 pages of the data sheet
Some Part number from the same manufacture
Some Part number from the same manufacture International Rectifier Corp. |
IRFBC30A 600V Single N-channel HexFET Power MOSFET in a TO-220AB Package |
IRFBC30AL 600V Single N-channel HexFET Power MOSFET in a TO-262 Package |
IRFBC30L |
IRFBC30S/L HexFET (r) Power MOSFET: 600v, 3.6a |
IRFBC40 600V Single N-channel HexFET Power MOSFET in a TO-220AB Package |
IRFBC40A |
IRFBC40AS 600V Single N-channel HexFET Power MOSFET in a D2-Pak Package |
IRFBC40L 600V Single N-channel HexFET Power MOSFET in a TO-262 Package |
IRFBC40LC 600V Single N-channel HexFET Power MOSFET in a TO-220AB Package |
IRFBC40S 600V Single N-channel HexFET Power MOSFET in a TO-262 Package |
IRFBC40S/L HexFET (r) Power MOSFET: 600v, 6.2a |
IRFBC40STRL 600V Single N-channel HexFET Power MOSFET in a TO-262 Package |
IRFBE20 800V Single N-channel HexFET Power MOSFET in a TO-220AB Package |
IRFBE30 |
IRFBE30L 800V Single N-channel HexFET Power MOSFET in a TO-262 Package |
IRFBF20 900V Single N-channel HexFET Power MOSFET in a TO-220AB Package |
IRFBF20L 900V Single N-channel HexFET Power MOSFET in a TO-262 Package |
IRFBF20S/L HexFET (r) Power MOSFET: 900v, 1.7a |
IRFBF20STRL 900V Single N-channel HexFET Power MOSFET in a TO-262 Package |
IRFBF30 900V Single N-channel HexFET Power MOSFET in a TO-220AB Package |
IRFBG20 1000V Single N-channel HexFET Power MOSFET in a TO-220AB Package |
ST380CH04C3 : Phase Control Thyristor AHE28XXS : Advanced Analog Hybrid-high Reliability Dc/dc Converters 300U060A : Standard Recovery Diodes IRFI634-012 : 5.6 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 250 volts ; rDS(on): 0.4500 ohms ; Number of units in IC: 1 IRKKF180-08FPS20PBF : 282.6 A, 200 V, SCR Specifications: Thyristor Type: SCR ; Pin Count: 5 ; VDRM: 200 volts ; VRRM: 200 volts ; IT(RMS): 283 amps IRL3402-019 : 85 A, 20 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 20 volts ; rDS(on): 0.0100 ohms ; Number of units in IC: 1 IRU1247-18CSPBF : DUAL OUTPUT, FIXED POSITIVE LDO REGULATOR, PSSO5 Specifications: Regulator Type: Low Dropout ; Output Polarity: Positive ; Output Voltage Type: Fixed ; Package Type: Other, ULTRA THIN PAK-5 ; Life Cycle Stage: ACTIVE ; Output Voltage: 3.2 to 3.7 volts ; IOUT: 2 amps ; Dropout Voltage: 1.3 volts OM5255SMV : 6 A, SILICON, RECTIFIER DIODE Specifications: Arrangement: Common Catode ; Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, EFFICIENCY ; IF: 6000 mA ; Package: HERMETIC SEALED PACKAGE-3 ; Pin Count: 3 ; Number of Diodes: 2 400UR080 : 400 A, 800 V, SILICON, RECTIFIER DIODE, DO-205AB Specifications: Package: DO-9, DO-9, 1 PIN ; Number of Diodes: 1 ; VRRM: 800 volts ; IF: 400000 mA |
Same catergory
Same catergory |
BUX32 : Screening Options Available = ;; Polarity = NPN ;; Package = TO3 (TO204AA) ;; Vceo = 400V ;; IC(cont) = 8A ;; HFE(min) = 8 ;; HFE(max) = 40 ;; @ Vce/ic = 3V / 6A ;; FT = 15MHz ;; PD = 150W. SC211 : Fast Recovery Diode. Surface mount device High voltage by mesa design High reliability Applications Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM IO IFSM Tj Tstg Resisitive load (Ta=25°C) Sine wave 10ms Conditions Rating *Mounted to glass fabric. PMD4001K : NPN transistor and high-speed switching diode to protect the base-emitter junction in reverse direction in a SOT346 (SC-59A/TO-236) small Surface-Mounted Device (SMD) plastic package.. 05002-620AFMB : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BP, 0.000062 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 6.20E-5 microF ; Capacitance Tolerance: 1 (+/- %) ; WVDC: 50 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface. 0828-000 : CAPACITOR, CERAMIC, 1000 V, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Mounting Style: Through Hole ; Operating Temperature: -55 to 85 C (-67 to 185 F). CL05C240GB5NCNC : CAPACITOR, CERAMIC, MULTILAYER, 50 V, C0G, 0.000024 uF, SURFACE MOUNT, 0402. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 2.40E-5 microF ; Capacitance Tolerance: 2 (+/- %) ; WVDC: 50 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface Mount Technology. D180J20C0GF63J5 : CAPACITOR, CERAMIC, 50 V, C0G, 0.000018 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Dielectric: Ceramic Composition ; Capacitance Range: 1.80E-5 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 50 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Through Hole ; Operating Temperature: -67 to 257 F (218 to 398 K). DTA123YA : 100 mA, PNP, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: PNP ; Package Type: ATR, 3 PIN. FR151-AP : 1.5 A, 50 V, SILICON, RECTIFIER DIODE, DO-15. s: Package: ROHS COMPLIANT, PLASTIC PACKAGE-2 ; Number of Diodes: 1 ; VRRM: 50 volts ; IF: 1500 mA ; trr: 0.1500 ns ; RoHS Compliant: RoHS. MWT-H770 : KA BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET. s: Polarity: N-Channel ; Package Type: HERMETIC SEALED PACKAGE-4 ; Number of units in IC: 1 ; Power Gain: 11 dB. S8838A : RF POWER, FET. s: Package Type: 2-7C1B, 3 PIN. MICROWAVE POWER GaAs FET Power GaAs FETs (Packaged) High power = 33.5 dBm = 8 GHz High gain = 8 GHz Suitable for C-Band amplifier Ion implantation RF Performance s (Ta 25° C) Type Number (Package Code) Characteristic Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efficiency Symbol P1dB G1dB IDS add VDS = 8GHz. SI6473DQ-E3 : 6200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 20 volts ; rDS(on): 0.0125 ohms ; Package Type: TSSOP-8 ; Number of units in IC: 1. SMF539KJT : RESISTOR, METAL FILM, 5 W, 5 %, 100 ppm, 39000 ohm, SURFACE MOUNT. s: Category / Application: General Use ; Technology / Construction: MetalFilm ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), CHIP, ROHS COMPLIANT ; Resistance Range: 39000 ohms ; Tolerance: 5 +/- % ; Temperature Coefficient: 100 ±ppm/°C ; Power Rating: 5 watts (0.0067. TAWD106K025S0600 : CAPACITOR, TANTALUM, SOLID, POLARIZED, 25 V, 10 uF, SURFACE MOUNT, 2917. s: Configuration / Form Factor: Chip Capacitor ; RoHS Compliant: Yes ; General : Polarized ; Capacitance Range: 10 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 25 volts ; Leakage Current: 2.5 microamps ; Mounting Style: Surface Mount Technology ; EIA Case Size: 2917 ; Operating. UT4413-S08-R : 30 V, 0.0085 ohm, P-CHANNEL, Si, POWER, MOSFET. s: Polarity: P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0085 ohms ; Package Type: SOP-8 ; Number of units in IC: 1. 2SJ551S-E : 18 A, 60 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET. s: Polarity: P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 60 volts ; rDS(on): 0.1100 ohms ; Package Type: LDPAK-3 ; Number of units in IC: 1. 3640Y2500335KXB : CAP,CERAMIC,3.3UF,250VDC,10% -TOL,10% +TOL,X7R TC CODE,-15,15% TC,3640 CASE. s: Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition. 7N10G-AA3-R : 7 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.3500 ohms ; Package Type: HALOGEN FREE PACKAGE-4 ; Number of units in IC: 1. |
10000 buyer reviews from United States
Joseph Phillips
Length of registration:7 years
The IRFBC30 integrated circuit is a high-performance, low-cost MOSFET that offers excellent switching performance and reliability. It is ideal for a wide range of applications, such as power management, motor control, and switching applications. It has a low on-resistance and low gate charge, making it a great choice for power-efficient designs. Utsource provides a reliable source for this product
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03/17/2023
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IRFBC30
IRFBC30 has several brands around the world that may have alternate names for IRFBC30 due to regional differences or acquisition. IRFBC30 may also be known as the following names:
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Unit Price:0.81960
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