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2SJ141 MOS Field Effect Power Transistors
  • 2SJ141
  • 2SJ141
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2SJ141

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Description

MOS Field Effect Power Transistors

Not found, similar datasheet recommended

  • ECAD Module
  • Manufacturer Part Number: 2SJ141
  • Brand: NEC
  • DateCode: 02+
  • Package / Case: TO-220
  • Category: Integrated Circuits (ICs)
  • Warranty: 100% Perfect Functions

All product names, trademarks, brands and logos used on this site are the property of their respective owners. The depiction, description or sale of products featuring these names, trademarks, brands and logos is for identification purposes only and is not intended to indicate any affiliation with or authorization by any rights holder.

ECAD Module

Product Attributes

  • 2SJ141 is a P-channel silicon MOSFET manufactured by NEC. It is housed in a TO-220 package. Description: The 2SJ141 is a P-channel MOSFET with a drain current of -20A and a drain-source voltage of -200V. It has a low on-resistance of 0.25 ohms and a low gate-source threshold voltage of -2.2V. Features: - Low on-resistance of 0.25 ohms - Low gate-source threshold voltage of -2.2V - High drain current of -20A - High drain-source voltage of -200V Applications: The 2SJ141 is suitable for use in high-power switching applications such as motor control, power supplies, and DC-DC converters. It can also be used in audio amplifiers and other high-power audio applications. (For reference only)

Preview of the first 3 pages of the data sheet

  • 2SJ141's pdf picture 1

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    2SJ141
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    Length of registration:7 years

    I recently purchased an IC 2SJ141 from your company and I am very pleased with the product. The IC is of high quality and has been working perfectly in my circuit. The packaging was also very secure and the delivery was on time. I would definitely recommend your company to others. Thank you for your excellent service.

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