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Description
Circuit Diagram
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Preview of the first 3 pages of the data sheet
Some Part number from the same manufacture
Some Part number from the same manufacture Eupec GmbH & Co KG |
BSM35GP120 |
BSM35GP120G |
BSM400GA120DN2 |
BSM400GA170DLC |
BSM50GB120DN2 |
BSM50GB170DN2 |
BSM50GB60DLC |
BSM50GD120DN2 |
BSM50GD120DN2E3226 |
BSM50GD120DN2G |
BSM50GD170DL |
BSM50GD60DLC |
BSM50GD60DLCE3226 |
BSM50GP120 |
BSM50GP60 |
BSM50GP60G |
BSM600GA120DLC |
BSM600GA120DLCS |
BSM75GB120DN2 |
BSM75GB170DN2 |
BSM75GB60DLC |
BSM35GP120G : D228S-2200 : D4201N : SCR / Diode Presspacks D660N-1600 : D748N-2200 : D850N : FP40R12KE3G : T1201N : SCR / Diode Presspacks T719N : SCR/ Diode Presspacks TT162N : SCR/ Diode Modules TZ425N : SCR/ Diode Modules |
Same catergory
Same catergory |
GP400LSS18 : Single Switch Igbt Module. Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 400A Per Module KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) APPLICATIONS High Power Inverters Motor Controllers Induction Heating Resonant Converters The Powerline range of high power modules includes half bridge, dual and single switch configurations. HAT3006R : Silicon N Channel/p Channel Power MOS Fet High Speed Power. Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips. IRG4PC30FD : Medium Voltage 600-1199 Volts. 600V Fast 1-8 KHZ Copack Igbt in a TO-247AC Package. OA47 : Diode Germanium. SKO2 : Schottky Barrier Rectifier. High current capability High surge current capability High reliability High efficiency Low power loss Low forward voltage drop Low cost Case : SMA Molded plastic Epoxy : UL94V-O rate flame retardant Lead : Lead Formed for Surface Mount Polarity : Color band denotes cathode end Mounting position : Any Weight : 0.064 gram Rating ° C ambient temperature. NE5520279A : NEC's 3.2 V, 2 W, L&S Band Medium Power Silicon LD-MOSFET NEC's NE5520279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the power amplifier for mobile and fixed wireless applications. Die are manufactured using NEC's NEWMOS technology (NEC's 0.6 μm WSi gate lateral MOSFET) and housed in a surface mount package.. C5020-LF : RECTIFIER DIODE. s: Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier. GRM55R7U2A273JZ01L : CAPACITOR, CERAMIC, MULTILAYER, 100 V, U2J, 0.027 uF, SURFACE MOUNT, 2220. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 0.0270 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 100 volts ; Temperature Coefficient: -750 ppm/°C ; Mounting Style: Surface. LL5985B : 2.4 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA. s: Diode Type: VOLTAGE REGULATOR DIODE. NZX10A : 9.7 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE. s: Diode Type: VOLTAGE REGULATOR DIODE ; RoHS Compliant: RoHS. PP72SUL0.15UF+/-1%160V : CAPACITOR, METALLIZED FILM, POLYPROPYLENE, 160 V, 0.15 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polypropylene ; Capacitance Range: 0.1500 microF ; Capacitance Tolerance: 1 (+/- %) ; WVDC: 160 volts ; Mounting Style: Through Hole. RCA060311K8DKEL : RESISTOR, METAL GLAZE/THICK FILM, 0.1 W, 0.5 %, 100 ppm, 11800 ohm, SURFACE MOUNT, 0603. s: Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 0603, CHIP, ROHS COMPLIANT ; Resistance Range: 11800 ohms ; Tolerance: 0.5000 +/- % ; Temperature Coefficient: 100 ±ppm/°C. 2224-V : 1 ELEMENT, 1000 uH, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Lead Style: Radial, WIRE ; Application: General Purpose, High Current ; Inductance Range: 1000 microH ; Rated DC Current: 1900 milliamps ; Operating Temperature: -55 to 105 C (-67 to 221 F). 7447715906 : GENERAL PURPOSE INDUCTOR. s: Application: General Purpose. Properties Inductance Rated current Saturation current DC Resistance DC Resistance Self resonant frequency Test conditions 100 kHz/ 40 K |L/L| L IR Isat RDC fres Value Unit µH A MHz Tol. ±30% max. typ. max. typ. It is recommended that the temperature of the part does not exceed 125°C under worst case operating conditions.Ambient temperature: to +85°C. |
10000 buyer reviews from United States
Joshua Lewis
Length of registration:7 years
I recently purchased the integrated circuit BSM35GD120DN2E3224 from Utsource and I am very pleased with the product. The circuit was tested thoroughly and the results were excellent. The performance was as expected and the quality of the product was top-notch. I would highly recommend Utsource for anyone looking for reliable and high-quality integrated circuits.
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03/17/2023
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BSM35GD120DN2E3224
BSM35GD120DN2E3224 has several brands around the world that may have alternate names for BSM35GD120DN2E3224 due to regional differences or acquisition. BSM35GD120DN2E3224 may also be known as the following names:
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